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    ULTRAFAST DIODE 20A 400V Search Results

    ULTRAFAST DIODE 20A 400V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    ULTRAFAST DIODE 20A 400V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C G G IC = 20A, TC =100°C TJ max = 150°C VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating  Microwave ovens


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    PDF IRG7PK35UD1PbF IRG7PK35UD1-EPbF IRG7PK35UD1PbFÂ 247ACÂ IRG7PK35UD1â 247ADÂ

    APT30DS60B

    Abstract: APT30DS60S APT6017BLL 400v high speed diode
    Text: 2 1 TO -24 7 D3PAK 1 - Cathode 2 2 - Anode 1 1 2 1 2 APT30DS60B 600V APT30DS60S 600V 20A 20A 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times


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    PDF APT30DS60B APT30DS60S O-247 APT6017BLL 400v high speed diode

    Untitled

    Abstract: No abstract text available
    Text: 2 1 TO -24 7 1 - Cathode 2 2 - Anode 1 D3PAK 1 2 1 APT30DS60B 600V APT30DS60S 600V 20A 20A 2 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times


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    PDF APT30DS60B APT30DS60S O-247

    Untitled

    Abstract: No abstract text available
    Text: 2 1 TO -24 7 D3PAK 1 - Cathode 2 2 - Anode 1 1 2 1 2 APT30DS60B 600V APT30DS60S 600V 20A 20A 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times


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    PDF APT30DS60B APT30DS60S O-247

    Untitled

    Abstract: No abstract text available
    Text: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C C C IC = 20A, TC =100°C TJ max = 150°C G G VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating  Microwave ovens


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    PDF IRG7PK35UD1PbF IRG7PK35UD1-EPbF IRG7PK35UD1PbFÂ 247ACÂ IRG7PK35UD1â 247ADÂ

    Untitled

    Abstract: No abstract text available
    Text: IRGS4620DPbF IRGB4620DPbF IRGP4620D -E PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C G G IC = 20A, TC =100°C G tSC ≥ 5µs, TJ(max) = 175°C C G E VCE(ON) typ. = 1.55V @ IC = 12A n-channel Applications • Appliance Drive


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    PDF IRGS4620DPbF IRGB4620DPbF IRGP4620D IRGP4620DPbF O-247AC O-220AC IRGP4620D-EPbF O-247AD

    SF20A400H

    Abstract: SF20A400HPI marking JC diode SF20A
    Text: SF20A400HPI Ultrafast Recovery Rectifier 400V, 20A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency  Dual common cathode rectifier construction


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    PDF SF20A400HPI O-220F-3L SF20A400HPI KSD-D0O027-001 SF20A400H marking JC diode SF20A

    Untitled

    Abstract: No abstract text available
    Text: SF20A400HPR Ultrafast Recovery Rectifier 400V, 20A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency  Dual common cathode rectifier construction


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    PDF SF20A400HPR O-220F-3L SF20A400HPR KSD-D0O041-000

    SF20A400H

    Abstract: ultrafast diode 10a 400v SF20A400HPR
    Text: SF20A400HPR Ultrafast Recovery Rectifier 400V, 20A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency 1  Dual common cathode rectifier construction


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    PDF SF20A400HPR O-220F-3L SF20A400HPR KSD-D0O041-000 SF20A400H ultrafast diode 10a 400v

    Untitled

    Abstract: No abstract text available
    Text: SF20A400HPI Ultrafast Recovery Rectifier 400V, 20A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency  Dual common cathode rectifier construction


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    PDF SF20A400HPI O-220F-3L SF20A400HPI KSD-D0O027-001

    SF20A400

    Abstract: No abstract text available
    Text: SF20A400HZ2 Ultrafast Recovery Rectifier 400V, 20A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency 1  Dual common cathode rectifier construction


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    PDF SF20A400HZ2 O-220F-3L SF20A400HPI KSD-D0O037-000 SF20A400

    SF20A400H

    Abstract: SF20A400HPI SF20A400
    Text: SF20A400HPI Semiconductor Ultrafast Recovery Rectifier 400V, 20A ULTRAFAST DUAL RECTIFIERS Features y Low forward voltage drop and leakage current y Ultrafast reverse recovery time trr<30ns y Low power loss and high efficiency y Dual common cathode rectifier construction


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    PDF SF20A400HPI O-220F-3L SF20A400HPI KSD-D0O027-000 SF20A400H SF20A400

    BYV29

    Abstract: BYV29-300 BYV29-400 BYV29B BYV29F
    Text: BYV29, BYV29F, BYV29B, UG8GT, UGF8GT, UGB8GT Series Ultrafast Rectifier t c u rod P New Reverse Voltage 300 to 400V Forward Current 8.0A Reverse Recovery Time 35ns TO-220AC BYV29, UG8 Series ITO-220AC (BYV29F, UGF8 Series) 0.185 (4.70) 0.415 (10.54) MAX.


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    PDF BYV29, BYV29F, BYV29B, O-220AC ITO-220AC 50mVp-p BYV29 BYV29-300 BYV29-400 BYV29B BYV29F

    Untitled

    Abstract: No abstract text available
    Text: PD - 94739A IRG4PH40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than


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    PDF 4739A IRG4PH40UD2 O-247AC

    IRF 3250

    Abstract: TD 1410 IC IGBT 1000V .200A application note P channel 600v 20a IGBT 035H C-150 IRFPE30 ultrafast swiching transistor IRG4PH40UD2PBF
    Text: PD - 95570 IRG4PH40UD2PbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter


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    PDF IRG4PH40UD2PbF O-247AC IRF 3250 TD 1410 IC IGBT 1000V .200A application note P channel 600v 20a IGBT 035H C-150 IRFPE30 ultrafast swiching transistor IRG4PH40UD2PBF

    ug10gct

    Abstract: BYT28 BYT28B BYT28F UG10 UGB10 UGB10GCT UGF10 UGF10GCT
    Text: BYT28, BYT28F, BYT28B UG10GCT, UGF10GCT, UGB10GCT Series Dual Ultrafast Soft Recovery Rectifier Reverse Voltage 300 to 400V Forward Current 10A Reverse Recovery Time 35ns ct u d Pro New ITO-220AB BYT28F, UGF10 Series 0.188 (4.77) 0.172 (4.36) 0.405 (10.27)


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    PDF BYT28, BYT28F, BYT28B UG10GCT, UGF10GCT, UGB10GCT ITO-220AB UGF10 O-220AB ug10gct BYT28 BYT28B BYT28F UG10 UGB10 UGF10GCT

    igbt 400V 20A

    Abstract: igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V
    Text: I- MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS IGBTs PAGE SELECTION G U ID E .


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    PDF HGTD6N40E1, HGTD6N50E1, HGTD10N40F1, HGTD10N50F1, HGTH12N40C1, HGTM12N40C1, HGTP10N40C1, HGTM12N60D1 HGTP12N60D1 HGTH20N40C1, igbt 400V 20A igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V

    diode C721

    Abstract: c719 transistor
    Text: PD - 9.808A kitemational lüRectifier IRGPC40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


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    PDF IRGPC40UD2 O-247AC C-724 diode C721 c719 transistor

    C1030

    Abstract: c1036 transistor C1032 CEE 16a CEE 32A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST IRGPH50KD2 C1030 transistor
    Text: PD-9.1121A international H>§Rectifier IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • Short circuit rated -10ps @125°C, VGE= 10V V CES = 1200V 5ys @ VGE = 15V • Switching-loss rating includes all "tail" losses


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    PDF IRGPH50KD2 -10ps O-247AC C-1036 C1030 c1036 transistor C1032 CEE 16a CEE 32A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST IRGPH50KD2 C1030 transistor

    Untitled

    Abstract: No abstract text available
    Text: International @ Rectifier P D -9.1121A IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features Vces = 1200V • Short circuit rated -10ps @125°C, VGE= 10V 5^s @ VGE = 15V • Switching-loss rating includes all “tail" losses


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    PDF IRGPH50KD2 -10ps O-247AC S5452 C-1036

    rac 16a 400v

    Abstract: C1030 irgph50kd2 e C1030 transistor VS 1838 B C1036 high power Rectifier diode c1036 transistor rac 16a- 400v c1034
    Text: PD - 9.1121A bitemational tor]Rectifier IRGPH50KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V C ES • Short circuit rated -1 Ops @ 125°C, VGE = 10V 5jis 0 VGE = 15V • Switching-loss rating includes all "tail" losses


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    PDF IRGPH50KD2 C-1035 O-247AC C-1036 rac 16a 400v C1030 irgph50kd2 e C1030 transistor VS 1838 B C1036 high power Rectifier diode c1036 transistor rac 16a- 400v c1034

    C1030 transistor

    Abstract: c1036 transistor transistor c1032 c1032 IC of XOR GATE C1030 c1036 c1035 C-1035 C-1032
    Text: International S Rectifier P D - 9.1121A IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • Short circuit rated -10 js @125°C, VGE= 10V V ces = 1 200V {5|js @ VGE = 15V • Switching-ioss rating includes all "tail" losses


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    PDF IRGPH50KD2 -10jjs C-1035 O-247AC C-1036 C1030 transistor c1036 transistor transistor c1032 c1032 IC of XOR GATE C1030 c1036 c1035 C-1032

    IR 1838

    Abstract: IRGPH50KD2 c1034 CEE 16a CEE 32A 1838 ir C1029 C-1032
    Text: PD-9.1121A international H>§Rectifier IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • Short circuit rated -10ps @125°C, VGE= 10V V CES = 1200V 5ys @ VGE = 15V • Switching-loss rating includes all "tail" losses


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    PDF IRGPH50KD2 -10ps O-247AC C-1036 IR 1838 IRGPH50KD2 c1034 CEE 16a CEE 32A 1838 ir C1029 C-1032

    STTA2006M

    Abstract: smd transistor p3
    Text: f Z 7 SCS-THOMSON Ä 7#@¡*fô smi(g¥[MO S _ STTA2006M ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If(av 20A V rrm 600V trr (typ) 30ns V f (max) 1.5 V FEATURES AND BENEFITS • SPECIFIC TO “FREEWHEEL MODE” OPERA­ TIONS: Freewheel or Booster Diode.


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    PDF STTA2006M associat9001000 0Qb0113 STTA2006M smd transistor p3