STTH512B
Abstract: STTH512FP STTH512D STTH512 STTH512B-TR 600V Ultrafast Diode DPAK
Text: STTH512 Ultrafast recovery - 1200 V diode Main product characteristics A IF AV 5A VRRM 1200 V Tj 175° C VF (typ) 1.25 V trr (typ) 48 ns Ultrafast, soft recovery • Very low conduction and switching losses ■ High frequency and/or high pulsed current operation
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STTH512
O-220FPAC
STTH512FP
O-220AC
STTH512D
STTH512B
STTH512B-TR
STTH512B
STTH512FP
STTH512D
STTH512
STTH512B-TR
600V Ultrafast Diode DPAK
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Untitled
Abstract: No abstract text available
Text: STTH512 Ultrafast recovery - 1200 V diode Main product characteristics A IF AV 5A VRRM 1200 V Tj 175° C VF (typ) 1.25 V trr (typ) 48 ns Ultrafast, soft recovery • Very low conduction and switching losses ■ High frequency and/or high pulsed current operation
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STTH512
O-220FPAC
STTH512FP
O-220AC
STTH512D
STTH512B
STTH512B-TR
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STTH1512W
Abstract: DO247 STTH1512 STTH1512D STTH1512G STTH1512G-TR STTH1512PI morocco L3
Text: STTH1512 Ultrafast recovery - 1200 V diode Main product characteristics A IF AV 15 A VRRM 1200 V Tj 175° C VF (typ) 1.20 V trr (typ) 53 ns Ultrafast, soft recovery • Very low conduction and switching losses ■ High frequency and/or high pulsed current
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STTH1512
DO247
STTH1512W
STTH1512PI
STTH1512G
O-220AC
STTH1512D
STTH1512W
DO247
STTH1512
STTH1512D
STTH1512G
STTH1512G-TR
STTH1512PI
morocco L3
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Untitled
Abstract: No abstract text available
Text: STTH812 Ultrafast recovery - 1200 V diode Main product characteristics A IF AV 8A VRRM 1200 V Tj 175° C VF (typ) 1.25 V trr (typ) 50 ns Ultrafast, soft recovery • Very low conduction and switching losses ■ High frequency and/or high pulsed current operation
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STTH812
O-220Ins
O-220FPAC
STTH812FP
O-220AC
STTH812D
STTH812G
STTH812DI
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STTH812D
Abstract: STTH812G STTh812DI STTH812 STTH812FP STTH812G-TR
Text: STTH812 Ultrafast recovery - 1200 V diode Main product characteristics A IF AV 8A VRRM 1200 V Tj 175° C VF (typ) 1.25 V trr (typ) 50 ns Ultrafast, soft recovery • Very low conduction and switching losses ■ High frequency and/or high pulsed current operation
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STTH812
O-220Ins
O-220FPAC
STTH812FP
O-220AC
STTH812D
STTH812G
STTH812DI
STTH812D
STTH812G
STTh812DI
STTH812
STTH812FP
STTH812G-TR
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stth3012d
Abstract: STTH3012W JESD97 STTH3012 k30a
Text: STTH3012 Ultrafast recovery - 1200 V diode Main product characteristics A IF AV 30 A VRRM 1200 V Tj 175° C VF (typ) 1.30 V trr (typ) 57 ns A K DO-247 STTH3012W Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses
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STTH3012
DO-247
STTH3012W
O-220AC
STTH3012D
stth3012d
STTH3012W
JESD97
STTH3012
k30a
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Untitled
Abstract: No abstract text available
Text: STTH3012 Ultrafast recovery - 1200 V diode Main product characteristics A IF AV 30 A VRRM 1200 V Tj 175° C VF (typ) 1.30 V trr (typ) 57 ns A K DO-247 STTH3012W Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses
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STTH3012
DO-247
STTH3012W
O-220AC
STTH3012D
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STTH1212D
Abstract: STTH1212 JESD97 STTH1212G STTH1212G-TR T0220AC
Text: STTH1212 Ultrafast recovery - 1200 V diode Main product characteristics A IF AV 12 A VRRM 1200 V Tj 175° C VF (typ) 1.25 V trr (typ) 50 ns A K TO-220AC STTH1212D Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses
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STTH1212
O-220AC
STTH1212D
STTH1212G
STTH1212D
STTH1212
JESD97
STTH1212G
STTH1212G-TR
T0220AC
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Untitled
Abstract: No abstract text available
Text: STTH1212 Ultrafast recovery - 1200 V diode Main product characteristics A IF AV 12 A VRRM 1200 V Tj 175° C VF (typ) 1.25 V trr (typ) 50 ns A K TO-220AC STTH1212D Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses
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STTH1212
O-220AC
STTH1212D
STTH1212G
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k30a
Abstract: STTH3012W JESD97 STTH3012 STTH3012D marking L5
Text: STTH3012 Ultrafast recovery - 1200 V diode Main product characteristics A IF AV 30 A VRRM 1200 V Tj 175° C VF (typ) 1.30 V trr (typ) 57 ns Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses ■ High frequency and/or high pulsed current
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STTH3012
DO-247
STTH3012W
O-220AC
STTH3012D
JESD97.
k30a
STTH3012W
JESD97
STTH3012
STTH3012D
marking L5
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Untitled
Abstract: No abstract text available
Text: STTH12012TV Ultrafast recovery - 1200 V diode Main product characteristics IF AV 2 x 60 A VRRM 1200 V Tj 150° C VF (typ) 1.30 V trr (typ) 50 ns K2 A2 A2 K1 K1 A1 K2 A1 STTH12012TV STTH12012TV2 A1 A1 K1 Features and benefits • Ultrafast, soft recovery ■
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STTH12012TV
STTH12012TV2
STTH12012TV1
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STTH12012TV1
Abstract: STTH12012TV2 JESD97 STTH12012TV STTH12012
Text: STTH12012TV Ultrafast recovery - 1200 V diode Main product characteristics IF AV 2 x 60 A VRRM 1200 V Tj 150° C VF (typ) 1.30 V trr (typ) 50 ns K2 A2 A2 K1 K1 A1 K2 A1 STTH12012TV STTH12012TV2 A1 A1 K1 Features and benefits • Ultrafast, soft recovery ■
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STTH12012TV
STTH12012TV2
STTH12012TV1
STTH12012TV1
STTH12012TV2
JESD97
STTH12012TV
STTH12012
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c2028
Abstract: STTH1512W STTH1512G-TR DO-247 DO247 STTH1512 STTH1512D STTH1512G STTH1512PI
Text: STTH1512 Ultrafast recovery - 1200 V diode Main product characteristics A IF AV 15 A VRRM 1200 V Tj 175° C VF (typ) 1.20 V trr (typ) 53 ns Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses ■ High frequency and/or high pulsed current
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STTH1512
DO247
STTH1512W
STTH1512PI
STTH1512G
O-220AC
STTH1512D
c2028
STTH1512W
STTH1512G-TR
DO-247
DO247
STTH1512
STTH1512D
STTH1512G
STTH1512PI
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UC7-1A
Abstract: fast recovery 50amp SML50SUZ12S
Text: SML50SUZ12S Ultrafast Recovery Diode 1200 Volt, 50Amp TECHNOLOGY The planar passivated and standard ultrafast recovery Back of Case Cathode diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with SML
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SML50SUZ12S
50Amp
50SUZ12S
UC7-1A
fast recovery 50amp
SML50SUZ12S
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Untitled
Abstract: No abstract text available
Text: STTH312 Ultrafast recovery - 1200 V diode Main product characteristics A IF AV 3A VRRM 1200 V Tj 175° C VF (typ) 1.15 V trr (typ) 55 ns K K A Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses ■ High frequency and/or high pulsed current
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STTH312
STTH312B
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SML75SUZ12T
Abstract: No abstract text available
Text: SML75SUZ12T Ultrafast Recovery Diode 1200 Volt, 75Amp Back of Case TECHNOLOGY Cathode The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising SML Semelab’s Graded Buffer Zone technology combined with
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SML75SUZ12T
75Amp
75SUZ12T
O-247
SML75SUZ12T
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SML30SUZ12B
Abstract: No abstract text available
Text: SML30SUZ12B Ultrafast Recovery Diode 1200 Volt, 30 Amp Back of Case TECHNOLOGY Cathode The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising SML Semelab’s Graded Buffer Zone technology combined with
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SML30SUZ12B
30SUZ12B
SML30SUZ12B
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Untitled
Abstract: No abstract text available
Text: STTH6012 Ultrafast recovery - 1200 V diode Main product characteristics IF AV 60 A VRRM 1200 V Tj 175° C VF (typ) 1.30 V trr (typ) 50 ns A K Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses ■ High frequency and/or high pulsed current
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STTH6012
DO-247
STTH6012W
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9514A
Abstract: JESD97 STTH312 STTH312B STTH312B-TR
Text: STTH312 Ultrafast recovery - 1200 V diode Main product characteristics A IF AV 3A VRRM 1200 V Tj 175° C VF (typ) 1.15 V trr (typ) 55 ns K K A Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses ■ High frequency and/or high pulsed current
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STTH312
STTH312B
9514A
JESD97
STTH312
STTH312B
STTH312B-TR
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JESD97
Abstract: STTH6012W Marking STMicroelectronics TO 247 stth6012
Text: STTH6012 Ultrafast recovery - 1200 V diode Main product characteristics IF AV 60 A VRRM 1200 V Tj 175° C VF (typ) 1.30 V trr (typ) 50 ns A K Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses ■ High frequency and/or high pulsed current
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STTH6012
DO-247
STTH6012W
JESD97
STTH6012W
Marking STMicroelectronics TO 247 stth6012
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Untitled
Abstract: No abstract text available
Text: SML30SUZ12B Ultrafast Recovery Diode 1200 Volt, 30 Amp TECHNOLOGY Back of Case The planar passivated and standard ultrafast recovery Cathode diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with SML
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SML30SUZ12B
30SUZ03B
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Untitled
Abstract: No abstract text available
Text: SML30EUZ12S Enhanced Ultrafast Recovery Diode 1200 Volt, 30 Amp MECHANICAL DATA Dimensions in mm inches TECHNOLOGY Back of Case Cathode SML 30EUZ12S The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising
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SML30EUZ12S
30EUZ12S
reliab06)
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SML75SUZ12L
Abstract: No abstract text available
Text: SML75SUZ12L Ultrafast Recovery Diode 1200 Volt, 75Amp Back of Case Cathode TECHNOLOGY The planar passivated and standard ultrafast recovery SML 75SUZ12L diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with
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SML75SUZ12L
75Amp
75SUZ12L
O-264
SML75SUZ12L
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fast recovery 30amp
Abstract: SML30SUZ12S
Text: SML30SUZ12S Ultrafast Recovery Diode 1200 Volt, 30Amp Back of Case Cathode TECHNOLOGY The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising SML 30SUZ12S Semelab’s Graded Buffer Zone technology combined with
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SML30SUZ12S
30Amp
30SUZ12S
fast recovery 30amp
SML30SUZ12S
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