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    UNIJUNCTION TRANSISTOR 2N2646 OF Search Results

    UNIJUNCTION TRANSISTOR 2N2646 OF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    UNIJUNCTION TRANSISTOR 2N2646 OF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor 2N2646

    Abstract: 2n2646 2n2646 pin Unijunction transistor 2N2646 of 2N2646 PHILIPS 2N2646 pin configuration 2N2646 transistor datasheet 2n2646 package 2N2646 CIRCUIT
    Text: 596 Z8Z. SbE D philips international • 7110a2b 0042bl0 b31 ■ PHIN J - 2 Z-Crt Philips Semiconductors 2N2646 Data sheet status Preliminary specification date of Issue December 1990 Silicon unijunction transistor QUICK REFERENCE DATA PARAMETER SYMBOL CONDITIONS


    OCR Scan     		711002b 004Eb 2N2646 -TO-18 VKBi-10V 7110a2b 004Sbl3 T-25-Q9 transistor 2N2646 2n2646 2n2646 pin Unijunction transistor 2N2646 of 2N2646 PHILIPS 2N2646 pin configuration 2N2646 transistor datasheet 2n2646 package 2N2646 CIRCUIT PDF

    2N2646

    Abstract: Unijunction transistor 2N2646 of 2N2646 Vp 2N2647 rbbo 2N2646 transistor 2N2646 CIRCUIT transistor 2N2646 2N2646 -pin configuration Maa 435
    Text: Datasheet central Sem iconductor Corp. 2N2646 2N2647 S IL I C O N UNIJUNCTION TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T O - 18 CASE* Manufacturers of World Class Discrete Semiconductors DESCRIPTION


    OCR Scan     		2N2646 2N2647 2N2646, 2N2647 100fi 2N2646 Unijunction transistor 2N2646 of 2N2646 Vp rbbo 2N2646 transistor 2N2646 CIRCUIT transistor 2N2646 2N2646 -pin configuration Maa 435 PDF

    2n2646

    Abstract: 2n2647
    Text: DIGITRON SEMICONDUCTORS 2N2646, 2N2647 SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 300 mW IE(EMS) 50 mA IE 2 Amps Emitter reverse voltage VB2E 30 Volts Interbase voltage


    Original     		2N2646, 2N2647 MIL-PRF-19500, 2n2646 2n2647 PDF

    2N2646

    Abstract: transistor 2N2646 2n2646 pin 2N2646 PHILIPS MC8444 Unijunction transistor 2N2646 of 2N2646 pin configuration EB20
    Text: PHILIPS INTERNATIONAL Philips Semiconductors 2N2646 Data sheet status Preliminary specification date of issue December 1990 Silicon unijunction transistor QUICK R E F E R E N C E DATA PARAM ETER SYM BO L ~v EB2 emitter-base 2 voltage 'EM emitter current Pm


    OCR Scan     		2N2646 -TO-18 MB81S5 MSB031 MCB443 MC8444 /vV450 MSA119 transistor 2N2646 2n2646 pin 2N2646 PHILIPS Unijunction transistor 2N2646 of 2N2646 pin configuration EB20 PDF

    2N2646

    Abstract: 2N2646 transistor TO-220 2N2646
    Text: DIGITRON SEMICONDUCTORS 2N2646, 2N2647 SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 300 mW IE(EMS) 50 mA IE 2 Amps Emitter reverse voltage VB2E 30 Volts Interbase voltage


    Original     		2N2646, 2N2647 MIL-PRF-19500, 2N2646 2N2646 transistor TO-220 2N2646 PDF

    2n2646 pin

    Abstract: 2N2646 pin configuration 2N2646 -pin configuration 2N2646 silicon unijunction transistor unijunction transistor transistor 2N2646 2N2646 CIRCUIT 2n2646 package 2N2646 PHILIPS
    Text: PHILIPS INTERNATIONAL WM 711D A2 b 0042b l0 b31 • P H I N 5bE D Philips Semiconductors T-2 2N2646 Data sheet status Preliminary specification date of issue Decem ber 1990 S'-O*? Silicon unijunction transistor QUICK REFERENCE DATA SYMBOL ~VeB2 PARAMETER CONDITIONS


    OCR Scan     		0042bl0 2N2646 -TO-18 MCB443 2N2646 711Dfl2b 0042L 2n2646 pin 2N2646 pin configuration 2N2646 -pin configuration silicon unijunction transistor unijunction transistor transistor 2N2646 2N2646 CIRCUIT 2n2646 package 2N2646 PHILIPS PDF

    2N2646

    Abstract: 2N2646-47 scr firing D5J45 2N2646.47 2ampe
    Text: Silicon D5J45 Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. a b so lu te m axim um ratings: 2 5 °C Power Dissipation (Note 1) RMS Emitter Current Peak Emitter Current (Note 2) Emitter Reverse Voltage


    OCR Scan     		D5J45 2N2646-47 35Volts D5J45 2N2646 scr firing 2N2646.47 2ampe PDF

    2N2646

    Abstract: scr firing scr firing circuit D5J37 2N2646-47
    Text: Silicon D5J37 Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. ABSOLUTE MAXIMUM RATINGS: 25°C (Note 1) Pow er D issipation RMS Em itter C urrent Peak Em itter C urrent 300 mw 50 ma 2 amperes 30 volts


    OCR Scan     		2N2646-47 10/xfd D5J37 2N2646 scr firing scr firing circuit PDF

    2N2646-47

    Abstract: D5J44 2N2646 2N2646.47 scr firing circuits dsj44 SCR 2N2646 VBII SITN
    Text: Silicon Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. a b so lu te m axim um ra tin g s: 2 5 ° C Pow er D issipation (Note 1) RMS Em itter C urrent 300 mW 50 mA 2Amperes 30Volts 35 Volts —6 5 °C to + 1 2 5 ‘


    OCR Scan     		2N2646-47 30Volts 35Volts 10/xF D5J44 2N2646 2N2646.47 scr firing circuits dsj44 SCR 2N2646 VBII SITN PDF

    Unijunction transistor 2N2646 of

    Abstract: 2N2646P
    Text: N AMER PHILIPS/DISCRETE b'lE D • bbSB'lBl DDEfllDM 77b « A P X Philips Semiconductors 2N2646 D a ta s h e e t s ta tu s Preliminary specification d a te o f is s u e December 1990 Silicon unijunction transistor Q U IC K R E F E R E N C E DATA SYM BOL PARAM ETER


    OCR Scan     		2N2646 C8444 Unijunction transistor 2N2646 of 2N2646P PDF

    2N2646

    Abstract: D5J43
    Text: Silicon D5J43 Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. a b s o lu te m axim um ra tin g s : 2 5 ° C (Note 1) 300 m W 50 mA 2 Amperes 30Volts 35 Volts —6 5 °C to + 1 2 5 ‘ -6 5 ° C to + 1 5 0 ‘


    OCR Scan     		D5J43 2N2646-47 30Volts D5J43 2N2646 PDF

    transistor 2N2646

    Abstract: 2N2646 pin configuration 2n2646 2n2646 pin Transistor 2N2646 PIN 2n2646 package 2N2646 -pin configuration Unijunction transistor 2N2646 of 2N2646 CIRCUIT silicon unijunction transistor
    Text: N AMER P H I L I P S / D I S C R E T E bTE D bbSBTBl DDEfllOM 77b P h ilip s S em ico n d u cto rs 2N2646 Data sheet status Preliminary specification date of issue December 1990 Silicon unijunction transistor Q U IC K R E F E R E N C E D A T A SYM BOL _V eB2


    OCR Scan     		2N2646 -TO-18 002fllD7 transistor 2N2646 2N2646 pin configuration 2n2646 2n2646 pin Transistor 2N2646 PIN 2n2646 package 2N2646 -pin configuration Unijunction transistor 2N2646 of 2N2646 CIRCUIT silicon unijunction transistor PDF

    GES2646

    Abstract: 2N2646 11Z12 GES2647 2N2646 terminal 2N2646 TO-92 2n2646 to 92 2N2647 transistor GES2646 Unijunction transistor 2N2646 of
    Text: G E SOLID STATE 3875081 Öl G E SOLID STATE »T|3fl7SDÔl □D17tm 01E 1 7 999 fl J D T -“ 3 7 - a _ / Transistors and Switches 2N2646, 2N2647, GES2646, GES2647 Silicon Unijunction Transistors


    OCR Scan     		2N2646, 2N2647, GES2646, GES2647 GES2646 GES2647 2N2647 2N2646 11Z12 2N2646 terminal 2N2646 TO-92 2n2646 to 92 transistor GES2646 Unijunction transistor 2N2646 of PDF

    transistor motorola 2n2646

    Abstract: 2N2646 motorola motorola 2n2646 2N2646 Vp motorola eb20 2N2646 Unijunction transistor 2N2646 of 2N2647 MOTOROLA motorola power transistor to-126 SCR 2N2646
    Text: MOTOROLA SC DIODES/OPTO 25E D b3t.7HSS 0000*100 b WÊ7 2N2646 2N2647 PN Unijunction Transistors Silicon PN Unijunction Transistors . designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. These devices feature:


    OCR Scan     		b3b7S55 2N2646 2N2647 2A-01 transistor motorola 2n2646 2N2646 motorola motorola 2n2646 2N2646 Vp motorola eb20 Unijunction transistor 2N2646 of 2N2647 MOTOROLA motorola power transistor to-126 SCR 2N2646 PDF

    UJT 2N2646

    Abstract: UJT 2N2646 specification 2n2646 ujt SCR 2N2646 PUT 2N2646 2N2646 2N2647 SCR firing inverter circuit UJT 2N2646 ratings 2N4891
    Text: UNIJUNCTIONS, TRIG G ERS AND SWITCHES S in c e the introduction of the com m ercial s ilic o n unijunction tran sistor in 1956, General Ele ctric ha s continued de­ velop in g an extensive line of negative re sistan ce threshold and four-layer sw itch devices. E a ch of these devices can


    OCR Scan     		2N489-494â 2N2646-47â 26B-2N2647-HI UJT 2N2646 UJT 2N2646 specification 2n2646 ujt SCR 2N2646 PUT 2N2646 2N2646 2N2647 SCR firing inverter circuit UJT 2N2646 ratings 2N4891 PDF

    UJT 2N2646 specification

    Abstract: UJT 2N2646 ratings UJT 2N2646 UJT 2N2646 operation 2n2646 ujt D5K2 ujt 2N6027 ujt transistor scr firing circuit UJT triggering circuit UJT 2N2646 RANGE
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		2N489-494â 2N2646-47â 0047/iF UJT 2N2646 specification UJT 2N2646 ratings UJT 2N2646 UJT 2N2646 operation 2n2646 ujt D5K2 ujt 2N6027 ujt transistor scr firing circuit UJT triggering circuit UJT 2N2646 RANGE PDF

    2N2646 Vp

    Abstract: 2n2646 IEB20
    Text: REVISIONS multicomp A LL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT O F SPC TECHNOLOGY. DCP # REV 1262 DOC. NO. SPC— F005 DESCRIPTION DRAWN DATE RELEASED HO 9 5 /0 2


    OCR Scan     		O--18, 2N2646 35C0693 2N2646 Vp 2n2646 IEB20 PDF

    UJT 2N2646 specification

    Abstract: UJT 2N2646 2n2646 ujt applications of ujt CIRCUITS BY USING 2N6027 applications of ujt with circuits 2N6028 scr firing circuit UJT triggering circuit unijunction application note D5K1
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		2N489-494â 2N2646-47â 0047/iF 100kn UJT 2N2646 specification UJT 2N2646 2n2646 ujt applications of ujt CIRCUITS BY USING 2N6027 applications of ujt with circuits 2N6028 scr firing circuit UJT triggering circuit unijunction application note D5K1 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 2N2417 - 2N2422, A, B SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 350 mW IE 70 mA ie 2 Amps Emitter reverse voltage VB2E 60 Volts Interbase voltage


    Original     		2N2417 2N2422, 33mW/Â 2N2646, 2N2647 MIL-PRF-19500, PDF

    2N4891

    Abstract: transistor 2N4891 2N4891 transistor 2N4891 unijunction 2N2646 motorola 2N4892 transistor motorola 2n2646 transistor mu10 2N4948 IEB20
    Text: MOTOROLA SC -CDIODES/OPTO} 6 3 6 7 2 5 5 M O T O R O L A SC 34 ÏËJbB h7aSS D I O D E S / O P T O 003014^ 34C 3 8 1 4 9 T"- SILICO N TH YR ISTO R DIE (continued) ? D S’*" 2"/ 2C4870 DIE NO. UNE SOURCE — DTL58 Device assembled from this die type are similar to the fol­


    OCR Scan     		DTL58 2N2646 2N4851 2N4870 2N4891 2N4892 2N4948 MU4891 MU4892 2C4870 transistor 2N4891 2N4891 transistor 2N4891 unijunction 2N2646 motorola transistor motorola 2n2646 transistor mu10 IEB20 PDF

    2N2646 Vp

    Abstract: IEB20 2N2646 2N2646 transistor 35C0693 RB2100
    Text: REVISIONS ALL L m ulticom p R IG H T S W HETHER RESERVED. IN W H O LE W IT H O U T T H E TECHNO LO G Y. NO OR EXPRESS IN P O R T IO N PART W R ITTE N O F T H IS CAN BE CONSENT OF DOC. NO. SPC— F005 * Effective: 7 / 8 / 0 2 * DCP No: 1398 P U B L IC A T IO N ,


    OCR Scan     		2N2646 35C0693 2N2646 Vp IEB20 2N2646 2N2646 transistor RB2100 PDF

    induction balance metal detector

    Abstract: TIS43 TIS43 Unijunction Transistor enamelled copper wire swg table TIS43 Unijunction Transistor datasheet metal detector coils eti project Dual coil metal detector circuit unijunction transistor TIS43 1K Ohm resistor 1/4W
    Text: ETI Project 549 INDUCTION BALANCE METAL DETECTOR Electronics Today International, Feb. 1977, Copyright  Wimbourne Publishing A really sensitive design operating on a different principle from that of other published circuits. This Induction Balance circuit will really sniff out those buried coins and other items of interest at great depths depending on the size of the object.


    Original     		PDF

    full wave controlled rectifier using RC triggering circuit

    Abstract: speed control of dc motor using ujt scr diac triac control circuit motor 220 V DIAC Opto-Isolator scr speed control dc motor using ujt and scr TRIAC dimmer pic pure sine wave dimmer automatic light dimmer based on a microchip PIC diac triac control circuit motor diac with triac ac speed control
    Text: Teccor brand Thyristors Phase Control Using Thyristors Introduction Due to high-volume production techniques, Thyristors are now priced so that almost any electrical product can benefit from electronic control. A look at the fundamentals of SCR and Triac phase controls shows how this is


    Original     		AN1003 full wave controlled rectifier using RC triggering circuit speed control of dc motor using ujt scr diac triac control circuit motor 220 V DIAC Opto-Isolator scr speed control dc motor using ujt and scr TRIAC dimmer pic pure sine wave dimmer automatic light dimmer based on a microchip PIC diac triac control circuit motor diac with triac ac speed control PDF

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


    Original     		DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E PDF