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    UNITED DETECTOR SILICON PHOTODIODE Search Results

    UNITED DETECTOR SILICON PHOTODIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM4GQF15FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4GRF20FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP176-2020-0.40-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4KMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4MMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4NQF10FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation

    UNITED DETECTOR SILICON PHOTODIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Laser Diodes 500um General PurposePhotoDiodes Silicon PhotoDiodes 1 mmDiameter Diameter InGaAs PD-LD Inc. offers a 500um diameter photoconductive Silicon Photodiode suitable for applications requiring response times of up to 6nsec. The planar diffused device


    Original     		PDF 500um 500um 350nm 1100nm 105/125MMF

    Untitled

    Abstract: No abstract text available
    Text: Laser Diodes Standard-Area Silicon PIN Photodiodes 500µm PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs in fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon devices cover the optical spectrum


    Original     		PDF 1100nm, ld/si-pin-pd-500um-high-speed

    United Detector silicon photodiode

    Abstract: near IR photodiodes centronic photodiodes photodetector centronic package 1
    Text: Electro-Optics Silicon Photodiodes HYBRID PHOTODETECTOR NEW www.centronic.us Amplified Single Element Detector ASD Series Centronic ASD Series integrate high performance single element photodiodes coupled to a high input impedance opamp to create a low noise, high gain photodetector. Light


    Original     		PDF EO/010 FM25100 EMS68441 United Detector silicon photodiode near IR photodiodes centronic photodiodes photodetector centronic package 1

    Untitled

    Abstract: No abstract text available
    Text: Electro-Optics Silicon Photodiodes HYBRID PHOTODETECTOR www.centronic.co.uk Amplified Single Element Detector ASD Series Centronic ASD Series integrate high performance single element photodiodes coupled to a high input impedance opamp to create a low noise, high gain photodetector. Light


    Original     		PDF EO/010

    electron Detector

    Abstract: S11142 United Detector silicon photodiode electron electron gun SE-171
    Text: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron


    Original     		PDF S11141 S11142 S11141: S11142: SE-171 KSPD1080E01 electron Detector S11142 United Detector silicon photodiode electron electron gun

    Untitled

    Abstract: No abstract text available
    Text: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.


    Original     		PDF K1713/K3413-01, SE-171 KIRD1029E02

    Untitled

    Abstract: No abstract text available
    Text: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron


    Original     		PDF S11141 S11142 S11141: S11142: SE-171 KSPD1080E01

    Untitled

    Abstract: No abstract text available
    Text: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron


    Original     		PDF S11141 S11142 S11141: S11142: SE-171 KSPD1080E01

    C2719

    Abstract: K1713-01 Hamamatsu PbS TWO COLOR DETECTOR UV Flame detector pbs photoconductive DETECTOR FLAME A3179-03 C1103-04 K1713-02
    Text: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.


    Original     		PDF K1713/K3413-01, SE-171 KIRD1029E04 C2719 K1713-01 Hamamatsu PbS TWO COLOR DETECTOR UV Flame detector pbs photoconductive DETECTOR FLAME A3179-03 C1103-04 K1713-02

    Hamamatsu PbS

    Abstract: K1713-02 K3413-01 K3413-02 A3179-03 C1103-04 C2719 C3757-02 K1713-01
    Text: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.


    Original     		PDF K1713/K3413-01, SE-171 KIRD1029E05 Hamamatsu PbS K1713-02 K3413-01 K3413-02 A3179-03 C1103-04 C2719 C3757-02 K1713-01

    Untitled

    Abstract: No abstract text available
    Text: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.


    Original     		PDF K1713/K3413-01, SE-171 KIRD1029E05

    Hamamatsu PbS

    Abstract: United Detector silicon photodiode A3179-03 C1103-04 C3757-02 C9329 K1713-01 K1713-02 K3413-01 K3413-02
    Text: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.


    Original     		PDF K1713/K3413-01, SE-171 KIRD1029E06 Hamamatsu PbS United Detector silicon photodiode A3179-03 C1103-04 C3757-02 C9329 K1713-01 K1713-02 K3413-01 K3413-02

    Untitled

    Abstract: No abstract text available
    Text: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.


    Original     		PDF K1713/K3413-01, SE-171 KIRD1029E06

    C1103-04

    Abstract: flame detector structure K1713 TWO COLOR DETECTOR two color photodiode Hamamatsu PbS DETECTOR FLAME Semiconductor Radiation Detector SI PBS DETECTOR transistor 1BW
    Text: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.


    Original     		PDF K1713/K3413-01, SE-171 KIRD1029E03 C1103-04 flame detector structure K1713 TWO COLOR DETECTOR two color photodiode Hamamatsu PbS DETECTOR FLAME Semiconductor Radiation Detector SI PBS DETECTOR transistor 1BW

    United Detector silicon photodiode

    Abstract: United Detector Technology photodiode United Detector Technology, silicon photodiode United Detector silicon bpw 50 80805 LED BPW 75 FM25100 BPW21
    Text: Electro-Optics Silicon Photodetectors SERIES BPW 21 Internationally recognised eye response silicon P on N Photodiode TYPICAL CHARACTERISTICS @ 23°C Responsivity Standard Illuminant A.2854°K Wavelength for Peak Responsivity Useful Wavelength Range Maximum Operating Voltage


    Original     		PDF FM25100 EMS68441 United Detector silicon photodiode United Detector Technology photodiode United Detector Technology, silicon photodiode United Detector silicon bpw 50 80805 LED BPW 75 FM25100 BPW21

    spot light size photodiode

    Abstract: S8382
    Text: IMAGE SENSOR NMOS linear image sensor S5930/S5931 series Built-in thermoelectric cooler ensures long exposure time and stable operation. NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


    Original     		PDF S5930/S5931 S5930 S5931 SE-171 KMPD1018E04 spot light size photodiode S8382

    Untitled

    Abstract: No abstract text available
    Text: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used


    Original     		PDF SAP500-Series

    Untitled

    Abstract: No abstract text available
    Text: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used


    Original     		PDF SAP500-Series

    Untitled

    Abstract: No abstract text available
    Text: SLD-67HFBG1 Silicon Photodiode Integral Infrared Rejection Filter Features • Large Area Planar Photodiode • Low capacitance, fast switching time • High responsivity • Low leakage current • Linear response vs irradiance • IR Blocking Filter • TO-5 package


    Original     		PDF SLD-67HFBG1

    Untitled

    Abstract: No abstract text available
    Text: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used


    Original     		PDF SAP500-Series

    United Detector Technology Photodiodes

    Abstract: United Detector Technology United Detector Technology, silicon photodiode United Detector silicon photodiode PIN-3DP PIN-10D United Detector Technology photodiode 601 Opto isolator PIN-25D United Detector Technology 10dp
    Text: PIN SERIES PLANAR-DIFFUSED SILICON PHOTODIODES LJ UNITED DETECTOR TECHNOLOGY 9310987 UNITED DEÍECTOR UNITED V 64C 0 0 7 8 7 "bM DETECTOR T-41-53 BICHA 7 □ 00D 7fl? h | ~ PIN SERIES PLANAR-DIFFUSED SILICON F •f ! M • D SERIES PIN PHOTODIODE SPECIFICATIONS


    OCR Scan     		PDF T-41-53 T-41-53 850nm 850nm/1kHz 0V/50Q PIN-10D 050x0 P/N-125DPL PIN-220D, PIN-220DP United Detector Technology Photodiodes United Detector Technology United Detector Technology, silicon photodiode United Detector silicon photodiode PIN-3DP United Detector Technology photodiode 601 Opto isolator PIN-25D United Detector Technology 10dp

    301B-AC

    Abstract: United Detector Technology United Detector Technology Photodiodes FIL-C10D udt sc 10 United Detector Technology, silicon photodiode UDT 260 C10D FIL-100C fil 3c
    Text: 77C 00841 d ~ r~ 77 DË T | ' m O T à ? 9310987 UNITED DETECTOR UNIT E» DETECTOR SILICON PHOTODIODES dOGOflm fl FIL* PHOTOCONDUCTIVE DEVICES PC \ : \ Parameter & Unit Active Surface Area . Typ. Junction •; ; Capacitance-C j. ' Typical . Responsivity-R\


    OCR Scan     		PDF 930nm FIL-20C FIL-100C 100x0 301B-AC United Detector Technology United Detector Technology Photodiodes FIL-C10D udt sc 10 United Detector Technology, silicon photodiode UDT 260 C10D fil 3c

    C1103-02

    Abstract: m5920 m59203 S3477-03
    Text: THERMOELECTRICALLY-COOLED SILICON PHOTODIODES S2592, S3477 SERIES HAM AM ATSU TECHNICAL DATA For low-light-level detection from UV to near IR. Highly stable operation. Hamamatsu offers therm oelectrical ly-cooled silicon photodiodes with a wide sensitivity range from UV to


    OCR Scan     		PDF S2592, S3477 S2592 C1103-02) A3179 S-164-40 JUN/88 CR-2000 C1103-02 m5920 m59203 S3477-03

    UDT-PIN-10AP

    Abstract: UDT-PIN United Detector Technology Photodiodes United Detector Technology United Detector Technology photodiode UDT 260 detector PIN-10AP United Detector silicon photodiode United Detector Technology, silicon photodiode PIN-10DF
    Text: 48C 00681 9310987 UNITED DETECTOR UNITED DETECTOR UNITED D E T E C T O R DE 4fl T-41-53 r DETECTOR/FI LTER COMBINATIONS DDDDtfll 1 •HI! T EC H N O LO G Y D A TA S H E E T 9F006 DETECTOR/FILTER COMBINATIONS PIN - 10AP PIN - lO D FP — PIN - 10RP -C.I.E.-fHO'TOPIC H U M AN ÊYEJ


    OCR Scan     		PDF T-41-53 9F006 10DFP UDT-PIN-10AP -10RP PIN-10RP PIN-10DFP PIN-10DFP, PIN-10AP PIN-10RP UDT-PIN-10AP UDT-PIN United Detector Technology Photodiodes United Detector Technology United Detector Technology photodiode UDT 260 detector United Detector silicon photodiode United Detector Technology, silicon photodiode PIN-10DF