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    UNITED DETECTOR TECHNOLOGY Search Results

    UNITED DETECTOR TECHNOLOGY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM4GQF15FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4GRF20FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP176-2020-0.40-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4KMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4MMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4NQF10FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation

    UNITED DETECTOR TECHNOLOGY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    United Detector Technology photodiode

    Abstract: United Detector Technology circuits metal detector HAMAMATSU P11120-901 KIRD1110E01 SE-171 co2 detector high speed photodiode detector circuit
    Text: InAsSb photodiode P11120-901 Infrared detector in the 5 m spectral band, with high sensitivity and high reliability The P11120-901 is an infrared detector that provides high sensitivity in the 5 μm spectral band due to our unique crystal growth technology. The InAsSb photodiode used in the detector has a planar structure that ensures high-speed response and high


    Original     		PDF P11120-901 P11120-901 SE-171 KIRD1110E01 United Detector Technology photodiode United Detector Technology circuits metal detector HAMAMATSU co2 detector high speed photodiode detector circuit

    Untitled

    Abstract: No abstract text available
    Text: InAsSb photodiode P11120-901 Infrared detector in the 5 m spectral band, with high sensitivity and high reliability The P11120-901 is an infrared detector that provides high sensitivity in the 5 m spectral band due to our unique crystal growth technology. The InAsSb photodiode used in the detector has a planar structure that ensures high-speed response and high


    Original     		PDF P11120-901 P11120-901 SE-171 KIRD1110E01

    Untitled

    Abstract: No abstract text available
    Text: InAsSb photovoltaic detector P12691-201 High-speed response and high sensitivity in the 8 m spectral band Thermoelectrically cooled infrared detector with no liquid nitrogen required The P12691-201 is an infrared detector that provides high sensitivity in the 8 μm spectral band by employing our unique crystal growth technology and back-illuminated structure and by integrating a lens. The InAsSb photovoltaic detector has a PN


    Original     		PDF P12691-201 P12691-201 B1201, KIRD1127E02

    CyOptics DFB chip

    Abstract: No abstract text available
    Text: Laser & detector chip & TO-can products Product Brief Description Features & Advantages: Avago Technologies supplies Indium Phosphide chips and TO-cans as technology enablers for TOSA/ ROSA, large form factor component and module manufacturers. Avago has been a long-time industry leader in the design,


    Original     		PDF 10Gbps, 10Gb/s O293x AV02-4128EN CyOptics DFB chip

    United Detector Technology

    Abstract: connector apc
    Text: Agilent 8473D Planar-Doped Barrier Detector 0.01 to 33.0 GHz Data Sheet This Planar- Doped Barrier PDB detector, combines the best characteristics of point- contact and low barrier Schottky to provide performance never before achievable. This new PDB diode technology provides


    Original     		PDF 8473D 8473D United Detector Technology connector apc

    Untitled

    Abstract: No abstract text available
    Text: Agilent 8473D Planar-Doped Barrier Detector 0.01 to 33.0 GHz Data Sheet This Planar- Doped Barrier PDB detector, combines the best characteristics of point- contact and low barrier Schottky to provide performance never before achievable. This new PDB diode technology provides


    Original     		PDF 8473D 8473D

    R5150-10

    Abstract: No abstract text available
    Text: ELECTRON PRELIMINARY DATA FEB. 1998 MULTIPLIER R5150-10 The R5150-10 is a new family of Hamamatsu ion detector. Thanks to Hamamatsu unique electron trajectory simulation technology, it delivers high gain, fast response and wide dynamic range. A newly developed secondary emitting surface


    Original     		PDF R5150-10 R5150-10 S-164-40 1006E01

    windmill design

    Abstract: R5150-30 R5150-80
    Text: ELECTRON MULTIPLIER PRELIMINARY DATA FEB. 1998 R5150-80 The R5150-80 is a new family of ion detector developed by means of Hamamatsu unique electron trajectory simulation technology. The R5150-80 has excellent noise elimination effects and an off-axis electrode structure and conversion type


    Original     		PDF R5150-80 R5150-80 S-164-40 1008E01 windmill design R5150-30

    Untitled

    Abstract: No abstract text available
    Text: MGA-43728 2.62–2.69 GHz Linear Power Amplifier Module Product Brief Description Features The Avago MGA-43728 is a fully matched, highly linear power amplifier PA designed for use in the 2.62-2.69 GHz band. Based on Avago’s proprietary 0.25um GaAs EpHEMT technology, the device features high linearity, gain


    Original     		PDF MGA-43728 MGA-43728 -50dBc 28-Lead MGA-43728-BLKG MGA-43728-TR1G AV02-4112EN

    Untitled

    Abstract: No abstract text available
    Text: MGA-43828 925–960 MHz Linear Power Amplifier Module Product Brief Description Features The Avago MGA-43828 is a fully matched, highly linear power amplifier PA designed for use in the 925-960 MHz band. Based on Avago’s proprietary 0.25um GaAs EpHEMT technology, the device features high linearity, gain


    Original     		PDF MGA-43828 MGA-43828 -50dBc 28-Lead MGA-43828-BLKG MGA-43828-TR1G AV02-4113EN

    Untitled

    Abstract: No abstract text available
    Text: TDA7851A 4 x 48 W MOSFET quad bridge power amplifier Datasheet − production data Features • Multipower BCD technology ■ High output power capability: – 4 x 48 W/4 Ω Max. – 4 x 28 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2 Ω Max. ■ MOSFET output power stage


    Original     		PDF TDA7851A

    TDA7576

    Abstract: No abstract text available
    Text: TDA7576B Dual bridge MOSFET power amplifier for 24 V systems Datasheet  production data Features • Multipower BCD technology ■ 24 V battery operation ■ MOSFET output power stage ■ High output power capability – 2 x 20 W/4  @ 24 V, 1 kHz; 10 %


    Original     		PDF TDA7576B Multiwatt15 TDA7576

    TDA7576B

    Abstract: TDA7576 mosfet power amplifier
    Text: TDA7576B Dual bridge MOSFET power amplifier for 24 V systems Datasheet − production data Features • Multipower BCD technology ■ 24 V battery operation ■ MOSFET output power stage ■ High output power capability – 2 x 20 W/4 Ω @ 24 V, 1 kHz; 10 %


    Original     		PDF TDA7576B Multiwatt15 TDA7576B TDA7576 mosfet power amplifier

    TDA7576B

    Abstract: TDA7576
    Text: TDA7576B Dual bridge MOSFET power amplifier for 24 V systems Datasheet − production data Features • Multipower BCD technology ■ 24 V battery operation ■ MOSFET output power stage ■ High output power capability – 2 x 20 W/4 Ω @ 24 V, 1 kHz; 10 %


    Original     		PDF TDA7576B Multiwatt15 TDA7576B TDA7576

    AN1066

    Abstract: W144 W181 W42C31-03 Signal Path Designer
    Text: Spread Aware TM AN1066 The use of Spread Spectrum Timing SST technology has pervaded the motherboard market to the point where it is being used in virtually all designs using chipsets that support a 100-MHz Front Side Bus (FSB). Spread spectrum timing signals are used for PCI, CPU, and memory buses. When


    Original     		PDF AN1066 100-MHz AN1066 W144 W181 W42C31-03 Signal Path Designer

    TDA7851A

    Abstract: No abstract text available
    Text: TDA7851A 4 x 48 W MOSFET quad bridge power amplifier Datasheet  production data Features • Multipower BCD technology ■ High output power capability: – 4 x 48 W/4  Max. – 4 x 28 W/4  @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2  Max. ■ MOSFET output power stage


    Original     		PDF TDA7851A TDA7851A

    tda7851

    Abstract: TDA7851A TDA-7851 AC00024 TDA785 4X72 D05AU1613 Complementary Audio Power Amplifier Flexiwatt AC00034
    Text: TDA7851A 4 x 45 W MOSFET quad bridge power amplifier Features • Multipower BCD technology ■ High output power capability: – 4 x 45 W/4 Ω Max. – 4 x 28 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2 Ω Max. ■ MOSFET output power stage ■ Excellent 2 Ω driving capability


    Original     		PDF TDA7851A TDA7851A tda7851 TDA-7851 AC00024 TDA785 4X72 D05AU1613 Complementary Audio Power Amplifier Flexiwatt AC00034

    Untitled

    Abstract: No abstract text available
    Text: Agilent 8473D Planar-Doped Barrier Detector 0.01 to 33.0 GHz Data Sheet This Planar- Doped Barrier PDB detector, combines the best characteristics of point- contact and low barrier Schottky to provide performance never before achievable. This new PDB diode technology provides


    Original     		PDF 8473D

    infrared illuminator diagram

    Abstract: ASDL led 940nm 3mm emission Diode Optical Smoke DEtector ASDL-4671 ASDL-4671-C22 ASDL-4671-C31 ASDL-4671-D22 ASDL-6620 high output ir led 940nm
    Text: ASDL-4671 High Performance T-1 3mm AlGaAs/GaAs Infrared (940nm) Lamp Data Sheet Description Features ASDL-4671 is a high performance Infrared emitter that utilizes AlGaAs on GaAs LED technology. It is optimized for high efficiency at emission wavelength of 940nm


    Original     		PDF ASDL-4671 940nm) ASDL-4671 940nm ASDL-6620 AV02-0028EN infrared illuminator diagram ASDL led 940nm 3mm emission Diode Optical Smoke DEtector ASDL-4671-C22 ASDL-4671-C31 ASDL-4671-D22 ASDL-6620 high output ir led 940nm

    ipad

    Abstract: diplexer diplexer wireless Diplexer 1710 2170 diplexer gsm DCS
    Text: IPAD – integrated passive devices for RF wireless applications TM New, high performance, thin film IPAD RF technology STMicroelectronics has introduced a new IPAD thick copper process delivering high performance, low cost and space efficient RF devices such as detectors, couplers, diplexer and


    Original     		PDF FLRFWIR0107 ipad diplexer diplexer wireless Diplexer 1710 2170 diplexer gsm DCS

    United Detector Technology Photodiodes

    Abstract: United Detector Technology United Detector Technology, silicon photodiode United Detector silicon photodiode PIN-3DP PIN-10D United Detector Technology photodiode 601 Opto isolator PIN-25D United Detector Technology 10dp
    Text: PIN SERIES PLANAR-DIFFUSED SILICON PHOTODIODES LJ UNITED DETECTOR TECHNOLOGY 9310987 UNITED DEÍECTOR UNITED V 64C 0 0 7 8 7 "bM DETECTOR T-41-53 BICHA 7 □ 00D 7fl? h | ~ PIN SERIES PLANAR-DIFFUSED SILICON F •f ! M • D SERIES PIN PHOTODIODE SPECIFICATIONS


    OCR Scan     		PDF T-41-53 T-41-53 850nm 850nm/1kHz 0V/50Q PIN-10D 050x0 P/N-125DPL PIN-220D, PIN-220DP United Detector Technology Photodiodes United Detector Technology United Detector Technology, silicon photodiode United Detector silicon photodiode PIN-3DP United Detector Technology photodiode 601 Opto isolator PIN-25D United Detector Technology 10dp

    United Detector Technology Photodiodes

    Abstract: United Detector Technology United Detector silicon UNITED DETECTOR C 2458 A2V-16 United Silicon
    Text: 84D 00964 03 10987 UNITED DETECTOR UNITE» DETECTOR AM D T-41-55 »F§'J31D‘lfi7 0D0Dcib4 5 United Detector Technology A Division of Technology’, Inc. f ILC 12525 Chadron Avenue • Hawthorne, California 90250 • 213 978-0516 Telex Number 18-2458 Fax Number (213) 644-1727


    OCR Scan     		PDF T-41-55 A2V-16 United Detector Technology Photodiodes United Detector Technology United Detector silicon UNITED DETECTOR C 2458 A2V-16 United Silicon

    301B-AC

    Abstract: United Detector Technology United Detector Technology Photodiodes FIL-C10D udt sc 10 United Detector Technology, silicon photodiode UDT 260 C10D FIL-100C fil 3c
    Text: 77C 00841 d ~ r~ 77 DË T | ' m O T à ? 9310987 UNITED DETECTOR UNIT E» DETECTOR SILICON PHOTODIODES dOGOflm fl FIL* PHOTOCONDUCTIVE DEVICES PC \ : \ Parameter & Unit Active Surface Area . Typ. Junction •; ; Capacitance-C j. ' Typical . Responsivity-R\


    OCR Scan     		PDF 930nm FIL-20C FIL-100C 100x0 301B-AC United Detector Technology United Detector Technology Photodiodes FIL-C10D udt sc 10 United Detector Technology, silicon photodiode UDT 260 C10D fil 3c

    United Detector Technology Photodiodes

    Abstract: UDT-500D 555D United Detector Technology udt 500d photodetector UDT-020D uv photodiode for 254nm UDT-555d 500D photodetectors UDT-450
    Text: UNITGD DETECTOR TECHNOLOGY A Division of ILC Technology, Inc. U N I T E » D E T E C T O R IDE D ' T 3 1 EHfl7 • □ □ □ ! □ ? ? S | r - w PHOTOPS" Hybrid - ù > '7 Photodetector/Amplifiers APPLICATIONS LOW-NOISE DETECTORS. ■ ■ ■ ■ ■ ■


    OCR Scan     		PDF 000107t T31EHÃ UDT-555D, UDT-555UV UDT-020D, UDT-020UV UDT-451 UDT-455, UDT-455HS, UDT-455UV United Detector Technology Photodiodes UDT-500D 555D United Detector Technology udt 500d photodetector UDT-020D uv photodiode for 254nm UDT-555d 500D photodetectors UDT-450