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    Panasonic Electronic Components UNR211F00L

    TRANS PREBIAS PNP 50V 0.1A MINI3
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    UNR211F Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UNR211F Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    UNR211F Panasonic Silicon PNP epitaxial planer transistor with biult-in resistor Original PDF
    UNR211F00L Panasonic Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 200MW MINI3 Original PDF

    UNR211F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    unr211

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95)


    Original     		PDF 2002/95/EC) UNR211x UN211x UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 unr211

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03383G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package  Two elements incorporated into one package (Transistors with built-in resistor)


    Original     		PDF 2002/95/EC) UP03383G UNR2213 UNR211F

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    UN211F

    Abstract: UNR211F XN0111F XN111F
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0111F (XN111F) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Basic Part Number 2 0.4±0.2 5 2.8+0.2 –0.3 • Two elements incorporated into one package


    Original     		PDF 2002/95/EC) XN0111F XN111F) UN211F UNR211F XN0111F XN111F

    UP03383G

    Abstract: UNR211F UNR2213
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03383G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package  Two elements incorporated into one package (Transistors with built-in resistor)


    Original     		PDF 2002/95/EC) UP03383G UNR2213 UNR211F UP03383G UNR211F UNR2213

    UP04383G

    Abstract: UNR211F UNR2213 transistors 10 KW
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04383G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package  Two elements incorporated into one package (transistors with built-in resistor)


    Original     		PDF 2002/95/EC) UP04383G UNR211F UNR2213 UP04383G UNR211F UNR2213 transistors 10 KW

    UNR211F

    Abstract: XN0111FG
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0111FG Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching/digital circuits • Package • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)


    Original     		PDF 2002/95/EC) XN0111FG UNR211F UNR211F XN0111FG

    UN211F

    Abstract: UNR211F XN0111F XN111F
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0111F (XN111F) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 2 1.1+0.2 –0.1


    Original     		PDF 2002/95/EC) XN0111F XN111F) UN211F UNR211F XN0111F XN111F

    UNR2110

    Abstract: UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ ue pl d in an c se ed lud


    Original     		PDF 2002/95/EC) UNR211x UN211x UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119

    UNR211F

    Abstract: UNR2213 XP03383
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP03383 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor)


    Original     		PDF 2002/95/EC) XP03383 UNR211F UNR2213 XP03383

    UNR211F

    Abstract: UNR2213 XP03383
    Text: Composite Transistors XP03383 Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) Unit: mm (0.425) For switching/digital circuits 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor)


    Original     		PDF XP03383 UNR2213 UNR211F UNR211F UNR2213 XP03383

    UNR2119

    Abstract: UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118
    Text: Transistors with built-in Resistor UNR211x Series UN211x Series Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and reduction of the number of parts


    Original     		PDF UNR211x UN211x UNR2110 UNR2111 UNR2112 UNR2113 UNR2119 UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118

    UNR211F

    Abstract: XN0111FG
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0111FG Silicon PNP epitaxial planar type For switching/digital circuits • Package • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)


    Original     		PDF 2002/95/EC) XN0111FG UNR211F UNR211F XN0111FG

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    UN211F

    Abstract: UNR211F XP0111F XP111F
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0111F (XP111F) Silicon PNP epitaxial planar type Unit: mm (0.425) For switching/digital circuits 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package


    Original     		PDF 2002/95/EC) XP0111F XP111F) UNR211F UN211F) UN211F UNR211F XP0111F XP111F

    UP03383G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03383G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Features  Package  Two elements incorporated into one package (Transistors with built-in resistor)


    Original     		PDF 2002/95/EC) UP03383G UNR2213 UNR211F UP03383G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0431NG Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Features  Package  Two elements incorporated into one package (Transistors with built-in resistor)


    Original     		PDF 2002/95/EC) UP0431NG UNR2213 UNR211F

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03383 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm +0.05 (0.30) 1 2 3 (0.50) (0.50) (0.20) • Two elements incorporated into one package


    Original     		PDF 2002/95/EC) UP03383 UNR2213 UNR211F

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0111F (XP111F) Silicon PNP epitaxial planar type (0.425) 0.20±0.05 4 0.2±0.1 M Di ain sc te on na tin nc ue e/ d 1 5˚ 5 • Features • Two elements incorporated into one package


    Original     		PDF 2002/95/EC) XP0111F XP111F) UNR211F UN211F)

    ic 2114

    Abstract: ic 2113 211d ic 2115 UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115
    Text: Transistors with built-in Resistor / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Silicon PNP epitaxial planer transistor


    Original     		PDF E/211F/211H/211L/211M/211N/211T/211V/211Z UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 10knductor ic 2114 ic 2113 211d ic 2115 UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115

    UN211F

    Abstract: UN211H UNR211F UNR211H XN0611FH XN611FH
    Text: Composite Transistors XN0611FH XN611FH Silicon PNP epitaxial planar transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 2 0.50+0.10 –0.05 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage


    Original     		PDF XN0611FH XN611FH) SC-74 UN211F UN211H UNR211F UNR211H XN0611FH XN611FH