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Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR91AHG Silicon PNP epitaxial planar type For digital circuits • Package Optimum for high-density mounting and downsizing of the equipment Contribute to low power consumption
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UNR91AHG
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR91AHJ Silicon PNP epitaxial planar type For digital circuits • Features 1.00±0.05 Optimum for high-density mounting and downsizing of the equipment
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UNR91AHJ
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR91AHJ Silicon PNP epitaxial planar type For digital circuits Unit: mm • Features 0.80±0.05 1.60+0.05 −0.03 1.00±0.05 Optimum for high-density mounting and downsizing of the equipment
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UNR91AHJ
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR91AHG Silicon PNP epitaxial planar type For digital circuits • Features Package Optimum for high-density mounting and downsizing of the equipment
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR91AHJ Silicon PNP epitaxial planar type For digital circuits • Features 1.00±0.05 Optimum for high-density mounting and downsizing of the equipment
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UNR91AHG
Abstract: UNR91ALG UNR91AH
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR91AHG Silicon PNP epitaxial planar type For digital circuits • Package Optimum for high-density mounting and downsizing of the equipment Contribute to low power consumption
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UNR91AHG
UNR91AHG
UNR91ALG
UNR91AH
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UNR91AHG
Abstract: UNR91ALG
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR91AHG Silicon PNP epitaxial planar type For digital circuits • Package Optimum for high-density mounting and downsizing of the equipment Contribute to low power consumption
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UNR91AHG
UNR91AHG
UNR91ALG
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: Zener Diodes MALT062HG Silicon planar type For ESD protection • Features Package Electrostatic discharge ESD: ±30 kV Four elements anode-common type Code SSMini3-F3 Pin Name 1: Cathode 1 2: Cathode 2 3: Anode 1, 2 Absolute Maximum Ratings Ta = 25°C
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MALT062HG
IEC61000-4-2
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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MALT062H
Abstract: MALT062HG UNR91AHG
Text: Zener Diodes MALT062HG Silicon planar type For ESD protection • Package Electrostatic discharge ESD: ±30 kV Four elements anode-common type Code SSMini3-F3 Pin Name 1: Cathode 1 2: Cathode 2 3: Anode 1, 2 Th an W is k y Th e a pro ou Fo an po du fo
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MALT062HG
MALT062H
MALT062HG
UNR91AHG
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MALT062H
Abstract: MALT062HG UNR91AHG
Text: Zener Diodes MALT062HG Silicon planar type For ESD protection • Package Electrostatic discharge ESD: ±30 kV Four elements anode-common type Code SSMini3-F3 Pin Name 1: Cathode 1 2: Cathode 2 3: Anode 1, 2 M Di ain sc te on na tin nc ue e/
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MALT062HG
MALT062H
MALT062HG
UNR91AHG
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