Untitled
Abstract: No abstract text available
Text: PD - 94731 IRFC18N50KB D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film G Key Electrical Characteristics TO-220 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description
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IRFC18N50KB
O-220
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PDF
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IRFC24N15DB
Abstract: No abstract text available
Text: PD - 94750 IRFC24N15DB HEXFET Power MOSFET Die in Wafer Form N-CH l l G S Key Electrical Characteristics Packaged Part c Parameter Description 150V RDS(on) = 95mΩ (max.) 6" Wafer D 100% Tested at Probe Available in Chip Pack, Unsawn Wafer Sawn on Film
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IRFC24N15DB
95film
IRFC24N15DB
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PDF
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IRL2203N equivalent
Abstract: No abstract text available
Text: PD - 94751A IRLC2203NB N-CH HEXFET Power MOSFET Die in Wafer Form D 100% Tested at Probe Available in Chip Pack, Unsawn Wafer Sawn on Film Ultra Low On-Resistance l l l G 30V RDS on = 0.007Ω (max.) 6" Wafer S Key Electrical Characteristics (Packaged Part)c
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4751A
IRLC2203NB
IRL2203N equivalent
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PDF
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Untitled
Abstract: No abstract text available
Text: DOHP55-16/18 advanced Diode Chip Sonic FRED Type Ag Al DOHP 55 IF [A] VRRM [V] Surface 1600 1800 30 Package Chip Size [mm] x [mm] 8.65 4.95 sawn on foil unsawn wafer in waffle pack Mechanical Parameters Features: Area active 26.0 mm 2 Area total 42.8 mm 2
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DOHP55-16/18
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PDF
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IR2128 application notes
Abstract: PD65003
Text: Data Sheet No. PD65003 IR2127C/IR2128C/IR21271C CURRENT SENSING SINGLE CHANNEL DRIVERDIE IN WAFER FORM Features • • • • • • • • • 100 % Tested at Probec Available in Chip Pack, Unsawn Wafer, Sawn on Film d Floating channel designed for bootstrap operation
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PD65003
IR2127C/IR2128C/IR21271C
IR2127/IR2128)
IR21271)
IR2127/IR21271)
IR2128)
IR2127/IR21271
IR2128 application notes
PD65003
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94770 IRFC2204B HEXFET Power MOSFET Die in Wafer Form N-CH D l l 100% Tested at Probe Available in Chip Pack, Unsawn Wafer Sawn on Film G 40V RDS on = 3.6mΩ (max.) 6" Wafer S Key Electrical Characteristics (Packaged Part)c Min. Typ. Max. Test Conditions
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IRFC2204B
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PDF
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IRLML6404
Abstract: IRLML6403 IRLML6501 irlml6402 equivalent IRLC6401B
Text: PD - 95828 IRLC6401B HEXFET l l D -12V RDS on = 0.05Ω (max.) 6" Wafer Power MOSFET Die in Wafer Form 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film G Key Electrical Characteristics (SOT-23 package) Parameter V(BR)DSS RDS(on)
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IRLC6401B
OT-23
100nA
IRLML6404
IRLML6403
IRLML6501
irlml6402 equivalent
IRLC6401B
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PDF
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IRFB18N50K equivalent
Abstract: No abstract text available
Text: PD - 94731 IRFC18N50KB D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film G Key Electrical Characteristics TO-220 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description
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Original
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IRFC18N50KB
O-220
100nA
12-Mar-07
IRFB18N50K equivalent
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PDF
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irfc20
Abstract: irfb20n50k
Text: PD - 94736 IRFC20N50KB HEXFET Power MOSFET Die in Wafer Form D 100% Tested at Probe Available in Chip Pack, Unsawn Wafer Sawn on Film Ultra Low On-Resistance l l l G S Key Electrical Characteristics Packaged Part c Parameter Description 500V RDS(on) = 0.25Ω
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Original
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IRFC20N50KB
irfc20
irfb20n50k
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PDF
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IR2110 equivalent
Abstract: IR2113 CLASS D Class d IR2110 IR2113 APPLICATION NOTE 10KF6 circuit to ir2113 IR2110C IR2110 16 pin IR2110 application note MOSFET 600V 7A
Text: Data Sheet No. PD65001 IR2110C/IR2113C HIGH AND LOW SIDE DRIVER IN DIE WAFER FORM Features • 100 % Tested at Probec • 3.3V logic compatible • Available in Chip Pack, Unsawn Wafer, Sawn on Film d Separate logic supply range from 3.3V to 20V • Floating channel designed for bootstrap operation
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PD65001
IR2110C/IR2113C
IR2110 equivalent
IR2113 CLASS D
Class d IR2110
IR2113 APPLICATION NOTE
10KF6
circuit to ir2113
IR2110C
IR2110 16 pin
IR2110 application note
MOSFET 600V 7A
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PDF
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IRFP460N equivalent
Abstract: No abstract text available
Text: PD - 94774 IRFC460NB HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe Available in Chip Pack, Unsawn Wafer Sawn on Film G 500V RDS on = 0.24Ω (max.) 6" Wafer S Electrical Characteristics (TO-247 Package) Parameter V(BR)DSS RDS(on)
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IRFC460NB
O-247
100nA
IRFP460N equivalent
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 95844 IRFC61N15DB D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe Available in Tape and Reel, Unsawn Wafer, Sawn on Film G 150V RDS on = 0.032Ω (max.) 6" Wafer S Key Electrical Characteristics (TO-220 package)d Parameter
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Original
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IRFC61N15DB
O-220
100nA
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PDF
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IRFC3810B
Abstract: IRFC3810
Text: PD - 95826B IRFC3810B D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film G Key Electrical Characteristics TO-274 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description
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Original
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95826B
IRFC3810B
O-274
100nA
IRFC3810B
IRFC3810
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94673 IRFC4104B D HEXFET Power MOSFET Die in Wafer Form 100% Tested at Probe G Available in Chip Pack, Unsawn wafer, S Sawn on Film Key Electrical Characteristics @TJ=25°C unless otherwise specified (TO-220 package)d l l Parameter V(BR)DSS
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IRFC4104B
O-220
200nA
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 97060 IRGC4065B PDP TRENCH IGBT TRENCH IGBT Die in Wafer Form 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuit in PDP Application l Low VCE on and Energy per Pulse (EPULSETM) for
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O-220
IRGC4065B
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PDF
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Untitled
Abstract: No abstract text available
Text: IX150T06M-AG tentative Trench XPT IGBT Chip Type VCE [V] IC [A] IX150T06M-AG 650 300 Chip Size [mm] x [mm] 14.2 10.6 Package Ordering Code sawn on foil tbd unsawn wafer tbd in waffle pack tbd Features / Advantages: Applications: ● Easy paralleling due to the positive temperature
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IX150T06M-AG
60747and
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PDF
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Untitled
Abstract: No abstract text available
Text: JTS3702 Micropower dual CMOS voltage comparator: unsawn wafer Datasheet - production data Related products • See TS3702 for plastic packaged version Description The JTS3702 is a micro power CMOS dual voltage comparator with an extremely low consumption of 9 µA typical per comparator 20
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JTS3702
TS3702
JTS3702
LM393)
LM393.
DocID025632
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PDF
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MIFARE Card Coil Design Guide
Abstract: MF0ICU1 LCR meter for ICs package contactless Functional Specification
Text: MF0 IC U10 01 120 mm Bumped unsawn wafer on UV-tape contactless single-trip ticket ICs Rev. 3.2 — 16 March 2007 Product data sheet 127632 PUBLIC 1. General description 1.1 Scope The MF0 IC U10 01 is a contactless smart card IC designed for card IC coils following the
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MF0ICU1001U/U7D
MIFARE Card Coil Design Guide
MF0ICU1
LCR meter for ICs package
contactless Functional Specification
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94786 IRFCG20B HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe Available in Chip Pack, Unsawn Wafer Sawn on Film G 1000V RDS on = 11Ω (max.) 5" Wafer S Key Electrical Characteristics (TO-220 Packaged Part)c Parameter Description
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Original
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IRFCG20B
O-220
12-Mar-07
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94751 IRLC2203NB N-CH HEXFET Power MOSFET Die in Wafer Form D 100% Tested at Probe Available in Chip Pack, Unsawn Wafer Sawn on Film Ultra Low On-Resistance l l l G 30V RDS on = 0.007Ω (max.) 6" Wafer S Key Electrical Characteristics (Packaged Part)c
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IRLC2203NB
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PDF
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Untitled
Abstract: No abstract text available
Text: DOHP15-16/18 advanced Diode Chip Sonic FRED Type Ag Al DOHP 15 IF [A] VRRM [V] Surface 1600 1800 10 Package Chip Size [mm] x [mm] 3.25 3.25 sawn on foil unsawn wafer in waffle pack Mechanical Parameters Features: Area total 10.6 mm 2 Wafer size Ø 125 mm Thickness
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DOHP15-16/18
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PDF
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IR2184 application notes
Abstract: IR2183 application notes IR2184 equivalent IR2184 APPLICATION NOTE ir2184 circuit
Text: Data Sheet No. PD65007 IR2183C HALF-BRIDGE DRIVER DIE IN WAFER FORM Features • 100 % Tested at Probe! • Available in Chip Pack, Unsawn Wafer, Sawn on Film " • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage
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PD65007
IR2183C
IR2183
IR2184 application notes
IR2183 application notes
IR2184 equivalent
IR2184 APPLICATION NOTE
ir2184 circuit
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94766 IRFC054VB HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe Available in Chip Pack, Unsawn wafer Sawn on Film G 60V RDS on = 9.0mΩ (max.) 6" Wafer S Electrical Characteristics (TO-247) Parameter V(BR)DSS RDS(on) VGS(th)
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Original
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IRFC054VB
O-247)
100nA
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PDF
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IRFP32N50K equivalent
Abstract: No abstract text available
Text: PD - 94730 IRFC32N50KB D HEXFET 500V RDS on = 0.16Ω (max.) 6" Wafer Power MOSFET Die in Wafer Form 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film Key Electrical Characteristics (TO-247 package) l G l Parameter V(BR)DSS RDS(on)
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Original
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IRFC32N50KB
O-247
100nA
IRFP32N50K equivalent
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PDF
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