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    UPD414 Search Results

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    UPD414 Price and Stock

    NEC Electronics Group UPD41464L-12

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    Bristol Electronics UPD41464L-12 2,914
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    NEC Electronics Group UPD41464L-10

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    Bristol Electronics UPD41464L-10 436
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    NEC Electronics Group UPD41464L80E2

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    Bristol Electronics UPD41464L80E2 332
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    NEC /94+ UPD41464C-80

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    Bristol Electronics UPD41464C-80 117
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    NEC Electronics Group UPD41464C-12

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    Bristol Electronics UPD41464C-12 68
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    UPD41464C-12 20
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    Quest Components UPD41464C-12 38
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    UPD41464C-12 21
    • 1 $4.89
    • 10 $2.445
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    UPD41464C-12 20
    • 1 $4.65
    • 10 $3.41
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    UPD41464C-12 7
    • 1 $9.6
    • 10 $7.04
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    UPD414 Datasheets (57)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPD414 NEC Fully Decoded 4096-Bit Dynamic RAM Original PDF
    UPD414-1 NEC Fully Decoded 4096-Bit Dynamic RAM Original PDF
    UPD41416-12 NEC 16,384 x 4-BIT DYNAMIC NMOS RAM Scan PDF
    UPD41416-15 NEC 16,384 x 4-BIT DYNAMIC NMOS RAM Scan PDF
    UPD41416-20 NEC 16,384 x 4-BIT DYNAMIC NMOS RAM Scan PDF
    UPD41416C-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    UPD41416C-15 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    UPD41416C-20 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    UPD414-2 NEC Fully Decoded 4096-Bit Dynamic RAM Original PDF
    UPD414256-10 NEC 262,144 x 4-Bit Dynamic NMOS RAM Scan PDF
    UPD414256-12 NEC 262,144 x 4-Bit Dynamic NMOS RAM Scan PDF
    UPD414256-15 NEC 262,144 x 4-Bit Dynamic NMOS RAM Scan PDF
    UPD41464 NEC DYNAMIC NMOS RAM Scan PDF
    UPD41464C NEC Scan PDF
    UPD41464C-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    UPD41464C-10 NEC 65,536 x 4-Bit Dynamic NMOS RAM Scan PDF
    UPD41464C-10 NEC 100ns V(cc): -1.0 to +7.0V 50mA 1W 65,536 x 4-bit dynamic NMOS RAM Scan PDF
    UPD41464C-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    UPD41464C-12 NEC 65,536 x 4-Bit Dynamic NMOS RAM Scan PDF
    UPD41464C-12 NEC 120ns V(cc): -1.0 to +7.0V 50mA 1W 65,536 x 4-bit dynamic NMOS RAM Scan PDF

    UPD414 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original
    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    CX20106A

    Abstract: GL7805 GL386 GL1150 GL7809 GL317 GLC556 LA7830 GL1151 GL3401
    Text: TABELA DE EQUIVALÊNCIAS SEMICONDUTORES GOLDSTAR formerly hosted by http://www.robvendas.hpg.ig.com.br/APOST/GOLD.HTM 1 of 6 G53 GAS105 LAG553-2 2SB463 - - 2SB474 GD75188 GD75189 DS1488 DS1489 SN75188 SN75189 GE4 GE1012 48-124376 MOC3012 - - GE3009 GE3010


    Original
    PDF GAS105 2SB474 GD75188 GD75189 DS1488 DS1489 SN75188 SN75189 GE1012 MOC3012 CX20106A GL7805 GL386 GL1150 GL7809 GL317 GLC556 LA7830 GL1151 GL3401

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    d41464c

    Abstract: NEC 41464c ud41464 41464c RAM
    Text: NEC UPD41464 65,536 X 4-Bit Dynamic NMOS RAM NEC Electronics Inc. Description Pin Configurations The /UPD41464 is a 65,536-word by 4-bit dynamic RAM designed to operate from a single + 5-volt power sup­ ply and fabricated with a double polylayer, N-channel


    OCR Scan
    PDF uPD41464 /UPD41464 536-word PPD41464 JJPD41464 d41464c NEC 41464c ud41464 41464c RAM

    UPD414C

    Abstract: PD414 SP414
    Text: N E C microcomputers,inc. /Ì.PD414-E fj.P D414 /¿.PD414-1 /¿PD 414-2 O B S O IX T ^ FULLY DECODED RANDOM ACCESS 4096 BIT DYNAM IC MEMORY DESCRIPTION The N E C /¿PD414 is a 4 0 9 6 words by 1 b it D ynam ic N channel M OS R A M . It was designed fo r m em ory applications where very low cost and large bit storage are


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    PDF uPD414-E uPD414 uPD414-1 uPD414-2 PD414 iPD414 SP414-4-77-1OK-WT UPD414C SP414

    414256

    Abstract: D414256 NEC 20PIN DIP
    Text: NEC /¿P D 414256 2 6 2 ,1 4 4 X 4 -B IT D YN A M IC NMOS RAM NEC Electronics Inc. P R E L IM IN A R Y INFORMATION Description Pin Configurations The //PD414256 is a 262,144-word by 4-bit dynamic N-channel MOS random access memory RAM de­ signed to operate from a single +5 V power supply. The


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    PDF 20-Pin uPD414256 144-word /UPD414256 414256 D414256 NEC 20PIN DIP

    D41464c

    Abstract: D41464 NEC D41464 PD41464 WE-HC 41464-15 UPD41464V-10 C-15 L-12 PD41464-15
    Text: NEC ¿/PD41464 6 5 ,5 3 6 X 4 -B IT D Y N A M IC NMOS RAM NEC Electronics Inc. Novem ber 1987 D e s c rip tio n The //PD41464 is a 65,536-word by 4-b it dynam ic Nchartnel MOS random access m em ory RAM designed to operate from a single + 5 -v o lt pow er supply. The


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    PDF uPD41464 536-word PD41464 D41464c D41464 NEC D41464 WE-HC 41464-15 UPD41464V-10 C-15 L-12 PD41464-15

    41464

    Abstract: M 41464 pd41464 41464 RAM NEC 41464-12 PD41464V-10 PD41464-10 pD41464V M 41464 B
    Text: SEC /¿PD41464 6 5 ,5 3 6 x 4-B IT DYNAMIC NMOS RAM NEC Electronics Inc. Description Pin Configurations The y PD41464 is a 65,536-word by 4-bit dynamic NMOS RAM designed to operate from a single +5-volt power supply. The negative voltage substrate bias is


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    PDF uPD41464 536-word /kPD41464 //PD41464 41464 M 41464 pd41464 41464 RAM NEC 41464-12 PD41464V-10 PD41464-10 pD41464V M 41464 B

    D41416

    Abstract: PD41416
    Text: N E C ELECTRONICS 6427525 N E C ELECTRONICS I NC T I D E « L 4 2 7 S 55 0 D1 0 7 Sfl INC 9 1 D 10758 D T-46,'23-15 MPD41416 16,384 X 4-BIT DYNAMIC NMOS RAM NEC NEC Electronics Inc. Revision 2 Description Pin Configuration The fiPD41416 is a 16,384-word by 4-bit dynamic Nchannel MOS RAM designed to operate from a single


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    PDF uPD41416 384-word PD41416 fiPD41416 83-0C17W D41416

    TMS4464-10

    Abstract: TMS4464 TMM41464P-12 41464 RAM V53C464-80 TMS4464-15 M 41464 41464 TMM41464P-15 s3c46
    Text: 195 - 2 5 6 K X m ít t i % TRAC max ns CC) TRCY min (ns) nM0 S 'f V TCAD rain (ns) + > TAH min (ns) Dy na mi c RAM (6 5 53 6 x 4 ) TP rain (ns;) TWCY min (ns) M % tí TDH nin (ns) TRWC Bin (ns) V D D or V C C (V) 1 Dû nax (mA) 18PIN À I DD STANDBY ( I SB/1 SB2)


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    PDF 18PIN TMM41464P-12 TMM41464P-15 TMS4464-10 S4464-I2 uP041464C-20 PM14S4L-10 uPD41464L-12 UPD414G4L-15 UPD41464V-10 TMS4464 41464 RAM V53C464-80 TMS4464-15 M 41464 41464 s3c46

    MN4264-15

    Abstract: MN4264-12 HM48416AP-15 MN4264 NEC 200 UPD41416C-12 ths4416-15 Hitachi Scans-001 mb81415 uPD414
    Text: - 176 - 6 4 K X A M « tt £ CO TRAC max ns TRCY rain (ns) TCAD min (ns) • V+ TAH min (ns) nM0 S ^ f t it TP min (ns) TÄCY min (ns) > D y n a m i c RAM (I 6 3 8 4 x 4) TDH min (ns) TRWC rain (ns) V D D or V C C (V) I DD max (mA) I DD STANDBY ( 1 S B / 1 SB2)


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    PDF 6384x4) hms41mp-12 hm48416ap-15 hm48416ap-20 mn4264-15 ths4416-15 tms4416-20 tms4416-25 upd41416c-12 upd4141sc-15 MN4264-12 MN4264 NEC 200 UPD41416C-12 Hitachi Scans-001 mb81415 uPD414