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    PD45128163

    Abstract: uPD45128163G5-A75-9JF-E
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD45128163-E 128M-bit Synchronous DRAM 4-bank, LVTTL Description EO The μPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 x 16 × 4 word × bit × bank . The synchronous DRAM achieved high-speed data transfer using the pipeline architecture.


    Original
    PD45128163-E 128M-bit PD45128163 728-bit 54-pin uPD45128163G5-A75-9JF-E PDF

    PD45128441

    Abstract: PD45128441G5-A10-9JF PD45128441G5-A75-9JF uPD45128441G5-A75A-9JF PD45128441G5-A80-9JF PD45128841G5-A10-9JF PD45128841G5-A75-9JF uPD45128841G5-A75A-9JF PD45128841G5-A80-9JF
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD45128441, 45128841 128M-bit Synchronous DRAM 4-bank, LVTTL Description EO The μPD45128441, 45128841 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4 word × bit × bank , respectively.


    Original
    PD45128441, 128M-bit 728-bit 54-pin PD45128441 PD45128441G5-A10-9JF PD45128441G5-A75-9JF uPD45128441G5-A75A-9JF PD45128441G5-A80-9JF PD45128841G5-A10-9JF PD45128841G5-A75-9JF uPD45128841G5-A75A-9JF PD45128841G5-A80-9JF PDF

    PD45128163

    Abstract: PD45128163G5-A10-9JF PD45128163G5-A75-9JF uPD45128163G5-A75A-9JF uPD45128163G5-A75L-9JF PD45128163G5-A80-9JF uPD45128163G5-A80L-9JF
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description EO The μPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 x 16 × 4 word × bit × bank . The synchronous DRAM achieved high-speed data transfer using the pipeline architecture.


    Original
    PD45128163 128M-bit PD45128163 728-bit 54-pin PD45128163G5-A10-9JF PD45128163G5-A75-9JF uPD45128163G5-A75A-9JF uPD45128163G5-A75L-9JF PD45128163G5-A80-9JF uPD45128163G5-A80L-9JF PDF

    PD45128441

    Abstract: uPD45128441G5-A10I-9JF uPD45128441G5-A75I-9JF uPD45128441G5-A80I-9JF PD45128441-I uPD45128841G5-A10I-9JF uPD45128841G5-A75I-9JF uPD45128841G5-A80I-9JF
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD45128441-I, 45128841-I 128M-bit Synchronous DRAM 4-bank, LVTTL WTR Wide Temperature Range Description EO The μPD45128441, 45128841 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4 (word × bit × bank), respectively.


    Original
    PD45128441-I, 45128841-I 128M-bit PD45128441, 728-bit 54-pin PD45128441 uPD45128441G5-A10I-9JF uPD45128441G5-A75I-9JF uPD45128441G5-A80I-9JF PD45128441-I uPD45128841G5-A10I-9JF uPD45128841G5-A75I-9JF uPD45128841G5-A80I-9JF PDF

    PD45128163

    Abstract: uPD45128163G5-A10LT-9JF uPD45128163G5-A10T-9JF uPD45128163G5-A75LT-9JF uPD45128163G5-A75T-9JF uPD45128163G5-A80LT-9JF uPD45128163G5-A80T-9JF PD45128163-T
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD45128163-T 128M-bit Synchronous DRAM 4-bank, LVTTL WTR Wide Temperature Range Description EO The μPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 x 16 × 4 (word × bit × bank).


    Original
    PD45128163-T 128M-bit PD45128163 728-bit 54-pin uPD45128163G5-A10LT-9JF uPD45128163G5-A10T-9JF uPD45128163G5-A75LT-9JF uPD45128163G5-A75T-9JF uPD45128163G5-A80LT-9JF uPD45128163G5-A80T-9JF PD45128163-T PDF

    uPD45128441G5-A75T-9JF

    Abstract: uPD45128441G5-A80T-9JF PD45128441-T PD45128441 uPD45128441G5-A10T-9JF uPD45128841G5-A10T-9JF uPD45128841G5-A75T-9JF uPD45128841G5-A80T-9JF
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD45128441-T, 45128841-T 128M-bit Synchronous DRAM 4-bank, LVTTL WTR Wide Temperature Range Description EO The μPD45128441, 45128841 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4 (word × bit × bank), respectively.


    Original
    PD45128441-T, 45128841-T 128M-bit PD45128441, 728-bit 54-pin uPD45128441G5-A75T-9JF uPD45128441G5-A80T-9JF PD45128441-T PD45128441 uPD45128441G5-A10T-9JF uPD45128841G5-A10T-9JF uPD45128841G5-A75T-9JF uPD45128841G5-A80T-9JF PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT P D 4 5 1 2 8 4 4 1 - A 7 5 ,4 5 1 2 8 8 4 1 -A 7 5 , 4 5 1 2 8 1 6 3 -A 7 5 128M-bit Synchronous DRAM, 133MHz 4-bank, LVTTL Description The ,uPD45128441-A75, 45128841-A75 and 45128163-A75 are high-speed 134,217,728-bit synchronous dynamic


    OCR Scan
    128M-bit 133MHz uPD45128441-A75 45128841-A75 45128163-A75 728-bit 54-pin M14378EJ1V0DS00 uPD45128xxx uPD45128xxxG5 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4, 2,097,152 x 16 x 4 word x bit x bank , respectively.


    OCR Scan
    uPD45128441 uPD45128841 uPD45128163 128M-bit 728-bit 54-pin 12650EJ9V0D PD45128441, uPD45128xxx PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿ P D 4 5 1 2 8 4 4 1 - A 7 5 , 4 5 1 2 8 8 4 1 - A 7 5 128M-bit Synchronous DRAM, 133MHz 4-bank, LVTTL Description The ^¡PD45128441-A75, 45128841-A75 are high-speed 134,217,728-bit synchronous dynam ic random-access


    OCR Scan
    128M-bit 133MHz PD45128441-A75, 45128841-A75 728-bit 54-pin 14030EJ1V 0DS00 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT //PD45128441,45128841,45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4, 2,097,152 x 16 x 4 word x bit x bank , respectively.


    OCR Scan
    //PD45128441 128M-bit uPD45128441 728-bit 54-pin 12650EJ80D PDF