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    UPD48288236 Search Results

    UPD48288236 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UPD48288236AFF-E18-DW1-A Renesas Electronics Corporation Low Latency DRAM, T-TFBGA, /Tray Visit Renesas Electronics Corporation
    UPD48288236AF1-E24-DW1-A Renesas Electronics Corporation Low Latency DRAM, TFBGA, /Tray Visit Renesas Electronics Corporation
    UPD48288236AFF-E24-DW1 Renesas Electronics Corporation Low Latency DRAM, T-TFBGA, /Tray Visit Renesas Electronics Corporation
    UPD48288236AF1-E18-DW1-A Renesas Electronics Corporation Low Latency DRAM, TFBGA, /Tray Visit Renesas Electronics Corporation
    UPD48288236AFF-E24-DW1-A Renesas Electronics Corporation Low Latency DRAM, T-TFBGA, /Tray Visit Renesas Electronics Corporation
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    UPD48288236 Price and Stock

    Rochester Electronics LLC UPD48288236FF-EF33-DW1-A

    DDR DRAM, 8MX36
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD48288236FF-EF33-DW1-A Bulk 29,151 7
    • 1 -
    • 10 $47.44
    • 100 $47.44
    • 1000 $47.44
    • 10000 $47.44
    		Buy Now

    Rochester Electronics LLC UPD48288236FF-EF26-DW1-A

    DDR DRAM, 8MX36
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD48288236FF-EF26-DW1-A Bulk 19,358 7
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    • 100 $47.44
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    • 10000 $47.44
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    Rochester Electronics LLC UPD48288236FF-EF25-DW1

    DDR DRAM, 8MX36
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD48288236FF-EF25-DW1 Bulk 5,729 7
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    • 100 $47.44
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    Rochester Electronics LLC UPD48288236FF-E33-DW1-E2

    DDR DRAM, 8MX36
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD48288236FF-E33-DW1-E2 Bulk 2,595 7
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    • 100 $47.44
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    Rochester Electronics LLC UPD48288236AF1-E24-DW1-A

    IC DRAM 288MBIT HSTL 144TFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD48288236AF1-E24-DW1-A Bulk 1,553 7
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    • 100 $47.43
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    Find more UPD48288236 price and stock on Findchips.com

    UPD48288236 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD48288209, 48288218, 48288236 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209 is a 33,554,432-word by 9 bit, the μPD48288218 is a 16,777,216 word by 18 bit and the μPD48288236 is a 8,388,608 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology


    Original     		PDF PD48288209, 288M-BIT PD48288209 432-word PD48288218 PD48288236 PD48288236

    E33-DW1

    Abstract: PD48288236FF-EF25-DW1-A MT49H16M18CFM-25 micron
    Text: インフォメーション 288M Low Latency DRAMと他社互換製品の 互換性 資料番号 M19702JJ1V0IF00（第1版） 発行年月 March 2009 NS NEC Electronics Corporation 2009 〔メ モ〕 2 インフォメーション M19702JJ1V0IF CMOSデバイスの一般的注意事項


    Original     		PDF M19702JJ1V0IF001 M19702JJ1V0IF PD48288236 PD48288218 PD48288209 PD48288118 PD48288209, PD48288118 E33-DW1 PD48288236FF-EF25-DW1-A MT49H16M18CFM-25 micron

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48288209-A μPD48288218-A μPD48288236-A R10DS0156EJ0100 Rev.1.00 Feb 01, 2013 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209-A is a 33,554,432-word by 9 bit, the μPD48288218-A is a 16,777,216 word by 18 bit and the μPD48288236-A is a 8,388,608 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced


    Original     		PDF PD48288209-A PD48288218-A PD48288236-A 288M-BIT 432-word R10DS0156EJ0100 PD48288236-A PD48288209-A,

    BGA15

    Abstract: 72M-BIT samsung ddr quad data rate SRAM idt 150-NM
    Text: 2009.9 2009.9 Ᏹߦᦨవ┵ࡔࡕ࡝⵾ຠࠍ㐿⊒ߒߡ߈ߚᛛⴚജࠍᵴ߆ߒ ᤨઍߩ࠾࡯࠭ߦวߞߚᣂߒ޿ࡔࡕ࡝໡ຠࠍ㐿⊒ߒߡ߹޿ࠅ߹ߔ‫ޕ‬ NECࠛ࡟ࠢ࠻ࡠ࠾ࠢࠬߪ㧘ࡔࡕ࡝੐ᬺಽ㊁ߦ߅޿ߡᏱߦᦨవ┵ߩᛛⴚࠍᛩ౉ߒ㧘


    Original     		PDF M16000JJHV0SG 150nm 144pin PD48288118 M16000JJHV0SG00 BGA15 72M-BIT samsung ddr quad data rate SRAM idt 150-NM

    PD48288236FF-EF25-DW1-A

    Abstract: 4828
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF M8E0904E PD48288236FF-EF25-DW1-A 4828

    PD48288236FF-EF25-DW1-A

    Abstract: PD482
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288209-A, 48288218-A, 48288236-A 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209-A is a 33,554,432-word by 9 bit, the μPD48288218-A is a 16,777,216 word by 18 bit and the μPD48288236-A is a 8,388,608 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced


    Original     		PDF PD48288209-A, 8288218-A, 8288236-A 288M-BIT PD48288209-A 432-word PD48288218-A PD48288236-A PD48288236FF-EF25-DW1-A PD482

    PD48288236

    Abstract: No abstract text available
    Text: Datasheet PD48288209A μPD48288218A μPD48288236A R10DS0097EJ0200 Rev.2.00 May 10, 2012 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209A is a 33,554,432-word by 9 bit, the μPD48288218A is a 16,777,216-word by 18 bit and the μPD48288236A is a 8,388,608-word by 36 bit synchronous double data rate Low Latency RAM fabricated with


    Original     		PDF PD48288209A PD48288218A PD48288236A 288M-BIT 432-word 216-word PD48288236A 608-word PD48288236

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288209, 48288218, 48288236 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209 is a 33,554,432-word by 9 bit, the μPD48288218 is a 16,777,216 word by 18 bit and the μPD48288236 is a 8,388,608 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology


    Original     		PDF PD48288209, 288M-BIT PD48288209 432-word PD48288218 PD48288236

    IMAPCAR

    Abstract: QTH-060-05-L-D-A uPD48288236 8830E-026-170S-F QTH-060-05 UPD70F3134AYGJ-UEN-A IMAPCAR2 nec V20 microcontroller QSH-060-01-L-D-A EPMC
    Text: User’s Manual IMAPCAR2-300-USB board Hardware Document No. EPMC-PU-0115-1.0 Date Published: May 2009 NEC Electronics Europe GmbH Legal Notes The information in this document is current as of May, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC


    Original     		PDF IMAPCAR2-300-USB EPMC-PU-0115-1 47KPUP IMAPCAR QTH-060-05-L-D-A uPD48288236 8830E-026-170S-F QTH-060-05 UPD70F3134AYGJ-UEN-A IMAPCAR2 nec V20 microcontroller QSH-060-01-L-D-A EPMC

    DDQ15

    Abstract: PD48288236FF-EF25-DW1-A MT49H16M18BM-25 MT49H16M18FM-25 PD48288236FF-E33-DW1-A MT49H16M18CBM-33 PD48288236 M18801E MT49H16M18FM
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF M19702JJ1V0IF001 M19702JJ1V0IF DDQ15 PD48288236FF-EF25-DW1-A MT49H16M18BM-25 MT49H16M18FM-25 PD48288236FF-E33-DW1-A MT49H16M18CBM-33 PD48288236 M18801E MT49H16M18FM

    A12Y

    Abstract: A10y nec ddr PD48288236 SUNRISE TSOP 12 20
    Text: December 2008 2008.12 NEC Electronics will develop much more new memory products to meet the customer needs by making use of the high technical capabilities accumulated through the long development experience in leading-edge memory products. NEC Electronics has been continuously dedicating the cutting-edge


    Original     		PDF G0706 M16000EJGV0SG00 A12Y A10y nec ddr PD48288236 SUNRISE TSOP 12 20

    PD48288236A

    Abstract: No abstract text available
    Text: Datasheet PD48288209A μPD48288218A μPD48288236A R10DS0097EJ0300 Rev.3.00 Oct 01, 2012 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209A is a 33,554,432-word by 9 bit, the μPD48288218A is a 16,777,216-word by 18 bit and the μPD48288236A is a 8,388,608-word by 36 bit synchronous double data rate Low Latency RAM fabricated with


    Original     		PDF PD48288209A PD48288218A PD48288236A 288M-BIT 432-word 216-word PD48288236A 608-word

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48288209A μPD48288218A μPD48288236A R10DS0097EJ0100 Rev.1.00 February 28, 2012 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209A is a 33,554,432-word by 9 bit, the μPD48288218A is a 16,777,216-word by 18 bit and the μPD48288236A is a 8,388,608-word by 36 bit synchronous double data rate Low Latency RAM fabricated with


    Original     		PDF PD48288209A PD48288218A PD48288236A 288M-BIT 432-word 216-word PD48288236A 608-word

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288209, 48288218, 48288236 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209 is a 33,554,432-word by 9 bit, the μPD48288218 is a 16,777,216 word by 18 bit and the μPD48288236 is a 8,388,608 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology


    Original     		PDF PD48288209, 288M-BIT PD48288209 432-word PD48288218 PD48288236

    EF25

    Abstract: semiconductor quality assurance office organization samsung ddr 72M-Bit 1M x 72
    Text: September 2009 2009.9 NEC Electronics will develop much more new memory products to meet the customer needs by making use of the high technical capabilities accumulated through the long development experience in leading-edge memory products. NEC Electronics has been continuously dedicating the cutting-edge


    Original     		PDF G0706 M16000EJHV0SG00 EF25 semiconductor quality assurance office organization samsung ddr 72M-Bit 1M x 72