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    UPF1010 Search Results

    UPF1010 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPF1010 Cree LDMOS FETs in Class AB Operation Cellular to 1 GHz Original PDF
    UPF1010-178 Cree FET Transistor, 10W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF1010F Cree 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF
    UPF1010F Cree FET Transistor, 10W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF1010P Cree 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF
    UPF1010P Cree FET Transistor, 10W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF

    UPF1010 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UPF1010

    Abstract: f940 ultrarf
    Text: URFDB Sec 04_1010 11/3/99 10:37 AM Page 4-1 UPF1010 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM,


    Original     		PDF UPF1010 30dBc UPF1010 f940 ultrarf

    semiconductors cross reference

    Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b
    Text: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30


    Original     		PDF BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b

    J181

    Abstract: UPF1010F f940 ultrarf UPF1010 UPF1010P package type 440109
    Text: UPF1010 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers


    Original     		PDF UPF1010 30dBc UPF1010F UPF1010P J181 UPF1010F f940 ultrarf UPF1010 UPF1010P package type 440109

    UPF1010F

    Abstract: J181 upf1010 UPF1010-178 UPF1010P 100UF 47PF
    Text: UPF1010 10W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		PDF UPF1010 30dBc UPF1010F UPF1010P UPF1010-178 UPF1010 UPF1010F J181 UPF1010-178 UPF1010P 100UF 47PF