Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    UPF1010F Search Results

    UPF1010F Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPF1010F Cree 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF
    UPF1010F Cree FET Transistor, 10W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF

    UPF1010F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J181

    Abstract: UPF1010F f940 ultrarf UPF1010 UPF1010P package type 440109
    Text: UPF1010 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers


    Original     		PDF UPF1010 30dBc UPF1010F UPF1010P J181 UPF1010F f940 ultrarf UPF1010 UPF1010P package type 440109

    UPF1010F

    Abstract: J181 upf1010 UPF1010-178 UPF1010P 100UF 47PF
    Text: UPF1010 10W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		PDF UPF1010 30dBc UPF1010F UPF1010P UPF1010-178 UPF1010 UPF1010F J181 UPF1010-178 UPF1010P 100UF 47PF