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    UPF1030P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPF1030P Cree FET Transistor, 30W, 1.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF

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    ultrarf

    Abstract: J216
    Text: UPF1030 30W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers


    Original     		PDF UPF1030 30dBc UPF1030F UPF1030P ultrarf J216

    J216

    Abstract: UPF1030P UPF1030 UPF1030F J156 J-146
    Text: UPF1030 30W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		PDF UPF1030 30dBc UPF1030F UPF1030P UPF1030 350mA J216 UPF1030P UPF1030F J156 J-146