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    UPF2012F Search Results

    UPF2012F Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPF2012F Cree FET Transistor, 12W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF

    UPF2012F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    F1840

    Abstract: Cree Microwave cree rf UPF2012 UPF2012-178 UPF2012F UPF2012P package type 440109
    Text: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		PDF UPF2012 30dBc UPF2012F UPF2012P UPF2012 F1840 Cree Microwave cree rf UPF2012-178 UPF2012F UPF2012P package type 440109

    Untitled

    Abstract: No abstract text available
    Text: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		PDF UPF2012 30dBc UPF2012F UPF2012P 44017r UPF2012

    Untitled

    Abstract: No abstract text available
    Text: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.


    Original     		PDF UPF2012 30dBc UPF2012F UPF2012P UPF2012 UPF2012F UPF2012P