upg 506

Contextual Info: UPG130GR UPG131GR L-BAND SPDT MMIC SWITCH FEATURES_ • HIGH OUTPUT POWER: 2 W att M inimum UPG130GR • LOW INSERTION LOSS: 0.6 dB Typical at 2.0 GHz • LOW CONTROL CURRENT: 50 |M Maximum • SMALL 8 PIN SOP PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE

saa 1068

Abstract: T 927 SAA 1006 saa 1070
Contextual Info: L-BAND SPDT MMIC SWITCH ^ G130GR UPG131GR FEATURES_ • HIGH OUTPUT POWER: 2 Watt Minimum UPG130GR • LOW INSERTION LOSS: 0.6 dB Typical at 2.0 GHz • LOW CONTROL CURRENT: 50 nA Maximum • SMALL 8 PIN SOP PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE

Contextual Info: UPG130GR UPG131GR L-BAND SPDT MMIC SWITCH FEATURES • HIGH OUTPUT POWER: 2 Watt Minimum UPG130GR • LOW INSERTION LOSS: 0.6 dB Typical at 2.0 GHz . LOW CONTROL CURRENT: 50 nA Maximum • SMALL 8 PIN SOP PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE

Contextual Info: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS E M r M O w m I h M m • Ta • « P C RLm dB Rlour (dB) IS0L (dB) «1. P tclsft N * MAX TYP TYP TYP Cot* ucsw ^iw i No. 45 60 10 10 40 B08 Hermetic Metal Ceramic 6-4 70 100 140 8 8 40 B08 Hermetic Metal Ceramic

Contextual Info: DATA SHEET NEC GaAs INTEGRATED CIRCUIT /fPG132G L-BAND SPDT SWITCH DESCRIPTION /¿PG132G is an L-Band SPDT Single Pole D oubleThrow GaAs FET switch w hich w as developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss.

Contextual Info: DATA SHEET NEC GaAs INTEGRATED CIRCUIT /¿PG132G L-BAND SPDT SWITCH DESCRIPTION ¿¡PG132G is an L-Band SPDT Single Pole Double Throw GaAs FET switch w hich was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss.