UT-141A-TP
Abstract: ut141atp
Text: TECHNICAL DATA SHEET RPC-2.92 02S141-272E4 STRAIGHT PLUG All dimensions are in mm; tolerances according to ISO 2768 m-H Interface Mechanically compatible with RPC-3.50 and SMA Documents Assembly instruction 02 A7 Material and plating RF_35/12.04/3.0 Connector parts
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02S141-272E4
D-84526
08-s546
UT-141A-TP
ut141atp
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UT-141A-TP
Abstract: NIPPON CAPACITORS UT141A-TP MRFE6P3300H 863MHz dvbt 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A114
Text: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 2, 12/2009 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance
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MRFE6P3300H
MRFE6P3300HR3
UT-141A-TP
NIPPON CAPACITORS
UT141A-TP
MRFE6P3300H
863MHz
dvbt
250GX-0300-55-22
AN1955
CDR33BX104AKYS
JESD22-A114
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 2, 10/2008 MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with fre-
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MRF6P3300H
MRF6P3300HR3/HR5
MRFE6P3300HR3/HR5.
PCN12895
MRF6P3300HR3
MRF6P3300HR5
MRF6P3300HR3
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865 RF transistor
Abstract: transistor z9 UT-141A-TP J707 NIPPON CAPACITORS zo 107 600B AN1955 JESD22-A114 MRF6P9220HR3
Text: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 1, 11/2005 RF Power Field Effect Transistor N -Channel Enhancement-Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
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MRF6P9220H
MRF6P9220HR3
865 RF transistor
transistor z9
UT-141A-TP
J707
NIPPON CAPACITORS
zo 107
600B
AN1955
JESD22-A114
MRF6P9220HR3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 2, 12/2009 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance
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MRFE6P3300H
MRFE6P3300HR3
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UT-141C-50-SP
Abstract: 141c DVB-T Schematic ATC600S150FT250XT NIPPON CAPACITORS UT-141A-TP COAX AN1955 JESD22-A114 MRF6P3300H
Text: Document Number: MRF6P3300H Rev. 2, 10/2008 Freescale Semiconductor Technical Data MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. MRF6P3300HR3 MRF6P3300HR5 RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with fre-
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Original
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PDF
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MRF6P3300H
MRF6P3300HR3/HR5
MRFE6P3300HR3/HR5.
PCN12895
MRF6P3300HR3
MRF6P3300HR5
MRF6P3300HR3
UT-141C-50-SP
141c
DVB-T Schematic
ATC600S150FT250XT
NIPPON CAPACITORS
UT-141A-TP
COAX
AN1955
JESD22-A114
MRF6P3300H
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