UT3419G
Abstract: UT3419
Text: UNISONIC TECHNOLOGIES CO., LTD UT3419 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3419G is a P-ch enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V. It is ESD protection.
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Original
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UT3419
UT3419G
UT3419G-AE3-R
OT-23
QW-R502-391
UT3419
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V.
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Original
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UT3419
UT3419
UT3419G-AE2-R
UT3419G-AE3-R
OT-23-3
OT-23
QW-R502-391
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD UT3419 Power MOSFET 2 0 V , 3 .5 A P-CH AN N EL EN H AN CEM EN T M ODE FI ELD EFFECT T RAN SI ST OR ̈ DESCRI PT I ON The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The
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Original
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UT3419
UT3419
UT3419L-AE3-R
UT3419G-AE3-R
OT-23
QW-R502-391
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V.
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Original
|
UT3419
UT3419
UT3419L-AE3-R
UT3419G-AE3-R
OT-23
QW-R502-391
|
PDF
|
UT3419
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V. It is ESD protection.
|
Original
|
UT3419
UT3419
UT3419L-AE3-R
UT3419G-AE3-R
OT-23
QW-R502-391
|
PDF
|
UT3419
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS ON , low gate charge. The gate voltage is as low as 2.5V. It is ESD protection.
|
Original
|
UT3419
UT3419
UT3419L-AE3-R
UT3419G-AE3-R
OT-23
QW-R502-391
|
PDF
|