Untitled
Abstract: No abstract text available
Text: NVMFS4841N Power MOSFET 30V, 7 mW, 89A, Single N−Channel SO8FL Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS4841NWF − Wettable Flanks Product
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NVMFS4841N
NVMFS4841NWF
AEC-Q101
NVMFS4841N/D
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PDF
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v4841
Abstract: NVMFS4841NT1G JESD51-12
Text: NVMFS4841N Power MOSFET 30V, 7 mW, 89A, Single N−Channel SO8FL Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified These are Pb−Free Devices*
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Original
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NVMFS4841N
AEC-Q101
NVMFS4841N/D
v4841
NVMFS4841NT1G
JESD51-12
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PDF
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Untitled
Abstract: No abstract text available
Text: NVMFS4841N Power MOSFET 30V, 7 mW, 89A, Single N−Channel SO8FL Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified These are Pb−Free Devices
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Original
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NVMFS4841N
AEC-Q101
NVMFS4841N/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NVMFS4841N Power MOSFET 30V, 7 mW, 89A, Single N−Channel SO8FL Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified These are Pb−Free Devices
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Original
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NVMFS4841N
NVMFS4841N/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NVMFS4841N Power MOSFET 30V, 7 mW, 89A, Single N−Channel SO8FL Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable
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Original
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NVMFS4841N
AEC-Q101
NVMFS4841N/D
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PDF
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