30n400
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage IGBT IXGF30N400 VCES = 4000V = 30A IC25 VCE sat ≤ 3.1V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM (IXGF) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXGF30N400
IC110
50/60Hz,
30N400
30n400
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40N400
Abstract: IXEL40N400 40N40 IGBT abb IGBT 4000V siemens igbt chip
Text: Preliminary Technical Information IXEL40N400 Very High Voltage IGBT VCES IC90 VCE sat tfi(typ) ( Electrically Isolated Tab) = 4000V = 40A ≤ 3.5V = 425ns ISOPLUS i5-PakTM Symbol Test Conditions VCES TJ = 25°C to 125°C VGES Maximum Ratings 4000 V Continuous
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IXEL40N400
425ns
40N400
IXEL40N400
40N40
IGBT abb
IGBT 4000V
siemens igbt chip
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Untitled
Abstract: No abstract text available
Text: High Voltage IGBT VCES = 4000V IC25 = 30A VCE sat ≤ 3.1V IXGF30N400 For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 4000 V VGES Continuous ± 20 V VGEM Transient
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IXGF30N400
IC110
30N400
11-23-09-C
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IXGF30N400
Abstract: 30n400 pulser
Text: High Voltage IGBT For Capacitor Discharge Applications IXGF30N400 VCES = 4000V = 30A IC25 VCE sat ≤ 3.1V ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 4000 V VGES Continuous ± 20 V VGEM Transient ± 30 V
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IXGF30N400
IC110
30N400
11-23-09-C
IXGF30N400
pulser
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40n400
Abstract: 40N40 DS99385B
Text: IXEL40N400 Very High Voltage IGBT VCES IC110 VCE sat tfi(typ) ( Electrically Isolated Tab) = = ≤ = 4000V 40A 3.2V 425ns ISOPLUS i5-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C VGES Maximum Ratings 4000 V Continuous ±20 V VGEM Transient ±30 V
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IXEL40N400
IC110
425ns
40N400
40N40
DS99385B
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IXGF30N400
Abstract: 30n40 30N400 pulser
Text: High Voltage IGBT For Capacitor Discharge Applications IXGF30N400 VCES = 4000V = 30A IC25 VCE sat ≤ 3.1V ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 4000 V VGES Continuous ± 20 V VGEM Transient ± 30 V
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IXGF30N400
IC110
30N400
05-20-08-B
IXGF30N400
30n40
30N400
pulser
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Untitled
Abstract: No abstract text available
Text: IXEL40N400 Very High Voltage IGBT VCES IC110 VCE sat tfi(typ) ( Electrically Isolated Tab) = = ≤ = 4000V 40A 3.2V 425ns ISOPLUS i5-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C VGES Maximum Ratings 4000 V Continuous ±20 V VGEM Transient ±30 V
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IXEL40N400
IC110
425ns
40N400
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor MMIX1B20N300C VCES = 3000V IC110 = 20A VCE sat 6.0V (Electrically Isolated Tab) C Symbol Test Conditions G Maximum Ratings VCES TJ = 25°C to 150°C
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MMIX1B20N300C
IC110
20N300C
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor MMIX1B15N300C VCES = 3000V IC110 = 15A VCE sat 6.0V (Electrically Isolated Tab) C Symbol Test Conditions G Maximum Ratings VCES TJ = 25°C to 150°C
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MMIX1B15N300C
IC110
15N300C
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IXBF20N300
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC90 = 15A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C
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IXBF20N300
20N300
1-23-09-A
IXBF20N300
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF15N300C VCES = 3000V IC110 = 15A VCE sat 6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXBF15N300C
IC110
15N300C
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE sat 3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXBF20N360
IC110
20N360
H7-B11)
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IXBF12N300
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF12N300 VCES = 3000V IC90 = 12A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C
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IXBF12N300
12N300
1-23-09-A
IXBF12N300
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IXBF55N300
Abstract: transistor 537 b 360 isoplus ixys mounting
Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF55N300 VCES = 3000V IC110 = 28A VCE sat ≤ 3.2V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C
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IXBF55N300
IC110
55N300
0-22-09-A
IXBF55N300
transistor 537 b 360
isoplus ixys mounting
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL20N300C VCES = 3000V IC110 = 20A VCE sat 6.0V (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXBL20N300C
IC110
20N300C
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL60N360 VCES = 3600V IC110 = 36A VCE sat 3.4V (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXBL60N360
IC110
100ms
60N360
H9-B11-27)
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IXBF55N300
Abstract: 55N300
Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF55N300 VCES = 3000V IC110 = 28A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C
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IXBF55N300
IC110
55N300
0-22-09-A
IXBF55N300
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF14N300 VCES = 3000V IC90 = 14A VCE sat 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXBF14N300
100ms
14N300
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF22N300 VCES = 3000V IC90 = 22A VCE sat 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXBF22N300
100ms
22N300
3-10-14-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE sat 3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXBF20N360
IC110
20N360
H7-B11)
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Untitled
Abstract: No abstract text available
Text: High Voltage IGBT VCES = 3000V IC25 = 36A VCE sat ≤ 2.7V IXGF36N300 For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 3000 V VGES Continuous ± 20 V VGEM Transient ± 30 V
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IXGF36N300
IC110
36N300
11-23-09-D
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IXGF36N300
Abstract: igbt 1500v 36n300 36N30
Text: High Voltage IGBT IXGF36N300 VCES = 3000V = 36A IC25 VCE sat ≤ 2.7V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 3000 V VGES Continuous ± 20 V VGEM Transient ± 30 V
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IXGF36N300
IC110
36N300
11-23-09-D
IXGF36N300
igbt 1500v
36N30
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF28N300 VCES = 3000V IC90 = 28A VCE sat 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ VCGR TJ = 25°C to 150°C, RGE = 1M
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IXBF28N300
100ms
28N300
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Untitled
Abstract: No abstract text available
Text: High Voltage IGBT For Capacitor Discharge Applications IXGF20N250 VCES = 2500V = 23A IC25 VCE sat ≤ 3.1V ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES
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IXGF20N250
20N250
7-12-A
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