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    VDG 13 RELAY Search Results

    VDG 13 RELAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UHD432R/B Rochester Electronics LLC UHD432 - Quad 2-Input NOR Power/Relay Driver Visit Rochester Electronics LLC Buy
    DRV777DR Texas Instruments 7-bit Integrated Motor and Relay Driver 16-SOIC -40 to 125 Visit Texas Instruments Buy
    ULN2003LVDR Texas Instruments Low Power 3.3V & 5V Relay Driver 16-SOIC -40 to 85 Visit Texas Instruments Buy
    DS3680D Texas Instruments Quad Telephone Relay Drivers 14-SOIC 0 to 70 Visit Texas Instruments Buy
    ULN2003LVPWR Texas Instruments Low Power 3.3V & 5V Relay Driver 16-TSSOP -40 to 85 Visit Texas Instruments Buy

    VDG 13 RELAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    wiring VDG 13 relay

    Abstract: MC33120 TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN
    Text: Order this data sheet by MC33120/D MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface


    Original     		PDF MC33120/D MC33120 MC33120 wiring VDG 13 relay TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN

    wiring VDG 13 relay

    Abstract: Battery Managements wiring VDG 14 relay CI 3060 elsys 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
    Text: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738


    Original     		PDF MC33121/D MC33121 MC33121 refere20 MC33121/D* wiring VDG 13 relay Battery Managements wiring VDG 14 relay CI 3060 elsys 1N4002 1N6282 1N6287 MC33121FN MC33121P

    wiring VDG 13 relay

    Abstract: Battery Managements long range gold detector circuit diagram PIN CONFIGURATION IC RT 3060 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
    Text: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738


    Original     		PDF MC33121/D MC33121 MC33121 refere12 wiring VDG 13 relay Battery Managements long range gold detector circuit diagram PIN CONFIGURATION IC RT 3060 1N4002 1N6282 1N6287 MC33121FN MC33121P

    MOTOROLA SEMICONDUCTOR AN1542

    Abstract: IGD 507 an MOTOROLA smd SCR AN1542 SMPS INRUSH CURRENT LIMITER ntc thermistors for inrush current limiting smps using SCR& mosfet AC INRUSH CURRENT LIMITER DSA0035015 Nippon capacitors
    Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1542/D AN1542 Active Inrush Current Limiting Using MOSFETs Prepared by: C. S. Mitter Motorola Inc. Input filter design has been an integral part of power supply designs. With the advent of input filters, the designer must


    Original     		PDF AN1542/D AN1542 AN1542/D* MOTOROLA SEMICONDUCTOR AN1542 IGD 507 an MOTOROLA smd SCR AN1542 SMPS INRUSH CURRENT LIMITER ntc thermistors for inrush current limiting smps using SCR& mosfet AC INRUSH CURRENT LIMITER DSA0035015 Nippon capacitors

    IGD 507 an

    Abstract: MOTOROLA SEMICONDUCTOR AN1542 pmos Vt AN1542 Nippon capacitors diode gfm
    Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1542/D AN1542 Active Inrush Current Limiting Using MOSFETs Prepared by: C. S. Mitter Motorola Inc. Input filter design has been an integral part of power supply designs. With the advent of input filters, the designer must


    Original     		PDF AN1542/D AN1542 AN1542/D* IGD 507 an MOTOROLA SEMICONDUCTOR AN1542 pmos Vt AN1542 Nippon capacitors diode gfm

    SANKEN power supply

    Abstract: SI-5201 Relay 5V, 10A, sanken sanken power transistor SANKEN SI B105 CF35 relay 5v 5a, 5 pin relay 5v 30a
    Text: Semiconductor relay SI-5201 March 2007 •Package ■General Description SI-5201 is an intelligent high-side switch with TO220S-7 N-channel power MOSFET available in Sanken’s TO220S-7 package. Over current and thermal shutdown circuits are integrated with control logic circuit in


    Original     		PDF SI-5201 SI-5201 O220S-7 O220S-7 I04-001EA-070320 SANKEN power supply Relay 5V, 10A, sanken sanken power transistor SANKEN SI B105 CF35 relay 5v 5a, 5 pin relay 5v 30a

    relay 5v 30a

    Abstract: Si520 si5201
    Text: Semiconductor relay SI-5201 March 2007 •Package ■General Description SI-5201 is an intelligent high-side switch with TO220S-7 N-channel power MOSFET available in Sanken’s TO220S-7 package. Over current and thermal shutdown circuits are integrated with control logic circuit in


    Original     		PDF SI-5201 SI-5201 O220S-7 I04-001EA-070320 relay 5v 30a Si520 si5201

    4w-2w hybrid

    Abstract: C10535E uPD7073 upd9903gt RFT Semiconductors P48GT-65-375B-1 PC9903
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD9903 µPD9903 ANALOG SUBSCRIBER LINE LSI DIGITAL CODEC The µPD9903 is a digital CODEC that can be used in analog subscriber circuits such as private branch exchangers (PBXs) and switching equipment for central offices. It features three of the functions required for analog subscriber


    Original     		PDF PD9903 PD9903 PC7073) 4w-2w hybrid C10535E uPD7073 upd9903gt RFT Semiconductors P48GT-65-375B-1 PC9903

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ377 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt-M O SV 2SJ377 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : Rd S (ON)= 0.160 (Typ.)


    OCR Scan     		PDF 2SJ377 --60V)

    45ACZ

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE 2SK2985 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-M OSII 2S K2985 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance • High Forward Transfer Admittance : |Yfs| = 70S (Typ.)


    OCR Scan     		PDF 2SK2985 K2985 45ACZ

    sc sf 12A H3

    Abstract: 2SJ438
    Text: TO SHIBA 2SJ438 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2 S J 43 8 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 0 3 .2 ± 0 .2


    OCR Scan     		PDF 2SJ438 100/i sc sf 12A H3 2SJ438

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK2963 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOS V 2SK2963 HIGH SPEED APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • 4V Gate Drive • Low Drain-Source ON Resistance • High Forward Transfer Admittance :|Y fs | = 1.2S (Typ.)


    OCR Scan     		PDF 2SK2963 100//A

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK2963 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-MOS V 2SK2963 HIGH SPEED APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • • • « • INDUSTRIAL APPLICATIONS Unit in mm 4V Gate Drive Low Drain-Source ON Resistance : Rd S (ON) = 0-5^ (Typ.)


    OCR Scan     		PDF 2SK2963

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK1381 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7t-MOSIII 2 S K 1 381 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS U n it in mm 4V Gate Drive


    OCR Scan     		PDF 2SK1381 20kil)

    diode 0416

    Abstract: 0416 relay diode 04-16
    Text: TO SHIBA TENTATIVE 2SK2986 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII 2SK2986 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 10.3MAX. 1.32 5.0 •


    OCR Scan     		PDF 2SK2986 20kil) --70A, 13R//H diode 0416 0416 relay diode 04-16

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2987 T O SH IBA FIELD EFFECT TRANSISTOR SILICON N CHANN EL M O S TYPE U -M O S H J <; K ? QR7 HIGH CURRENT SW ITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE A N D M O T O R DRIVE APPLICATIONS • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2987 100/zA

    Untitled

    Abstract: No abstract text available
    Text: TP0102 ^ Supertax; inc- TP0104 Low Thresh old P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdss/ ^ D S O N V<3S(th) ' d (ON ) b v dgs (max) (max) (min) -20V 4.0£2 -2.4V -40V 4.0ÌÌ -2.4V Order Number / Package


    OCR Scan     		PDF TP0102 TP0102N2 TP0104N2 TP0102N3 TP0104N3 O-243AA* TP0104N8 TP0102ND TP0104ND OT-89.

    wiring VDG 13 relay

    Abstract: transistor tip 62 1ST22 R/IC+ax+33121
    Text: MOTOROLA • SEMICONDUCTOR MC33121 TECHNICAL DATA Low Voltage Subscriber Loop Interface Circuit The MC33121 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface functions include battery feed, proper loop termination AC impedance,


    OCR Scan     		PDF MC33121 MC33121 wiring VDG 13 relay transistor tip 62 1ST22 R/IC+ax+33121

    motorola 9100-11

    Abstract: Battery Managements MC33120 MC33120P mjd41 rs 3060 cj 1N4002 MC33120FN ST12 ST21
    Text: 02/18/:0 06:24 To Keith Ellis From Motorola Mfax Ph: 602-244-6591 Fax: 602-244-6693 03/33 Order this data shoot by MC33120/D l o i f - i°fO MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC


    OCR Scan     		PDF MC33120/D MC33120 motorola 9100-11 Battery Managements MC33120P mjd41 rs 3060 cj 1N4002 MC33120FN ST12 ST21

    wiring VDG 13 relay

    Abstract: IR6000 "international rectifier" ir6000 wiring VDG 14 relay driver injectors 24V 8 pins DIP relay pinout diagram R6000 DDE1363 SS452 D-6380
    Text: r ì Preliminary Data Sheet 6.025 INTERNATIONAL RECTIFIER IO R IR 6 0 0 0 INTELLIGENT HIGH-SIDE □IN/IOS POWER SWITCH Avalanche Rated 60 Volts/1 OOmQ Product Summary General Description The IR6000 is a monolithic, fully self protected high side DMOS switch. Designed primarily for solenoid and


    OCR Scan     		PDF IR6000 R6000 IR6000 D-6380 wiring VDG 13 relay "international rectifier" ir6000 wiring VDG 14 relay driver injectors 24V 8 pins DIP relay pinout diagram DDE1363 SS452

    ixfk73n30

    Abstract: IXFN73N30
    Text: ÜIXYS VDSS HiPerFET Power MOSFETs IXFK73N30 IXFN 73N30 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ^D25 p DS on 300 V 73 A 45 mQ 300 V 73 A 45 mQ trr <200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN v DSS Tj =25°Cto150°C


    OCR Scan     		PDF IXFK73N30 IXFN73N30 O-264 Cto150 OT-227 E153432 73N30 IXFN73N30

    Diode D25 N10 R

    Abstract: Diode D25 N10 P
    Text: XYS HiPerFET Power MOSFETs IXFK100N10 IXFN150 N10 v ¥ DSS ^D25 P DS on = = = 100 V 100/150 A 12 mQ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr K P relim inary data TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK


    OCR Scan     		PDF IXFK100N10 IXFN150 O-264 OT-227 E153432 Diode D25 N10 R Diode D25 N10 P

    Untitled

    Abstract: No abstract text available
    Text: • 430Z271 0054745 0T2 fKj HARRIS V D SEMICONDUCTOR February1994 ■ HAS RFD7N10LE, RFD7N10LESM RFP7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging • 7A, 100V JEDEC TO-220AB


    OCR Scan     		PDF 430Z271 RFD7N10LE, RFD7N10LESM RFP7N10LE O-220AB O-251AA RFD7N10LESM RFP7N10LE 184e-9

    IRF452

    Abstract: IRF450 IRF451 irf453
    Text: h a f r r is IRF450, IRF451, IRF452, IRF453 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 11A and 13A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRF450, IRF451, IRF452, IRF453 TA17435. RF452, IRF452 IRF450 IRF451 irf453