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    73N30 Search Results

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    73N30 Price and Stock

    Nisshinbo Micro Devices RP173N301B-TR-FE

    IC REG LINEAR 3V 150MA SOT23-5
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    DigiKey RP173N301B-TR-FE Digi-Reel 5,850 1
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    RP173N301B-TR-FE Cut Tape 5,850 1
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    RP173N301B-TR-FE Reel 3,000 3,000
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    Mouser Electronics RP173N301B-TR-FE 3,890
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    Nisshinbo Micro Devices RP173N301D-TR-FE

    IC REG LINEAR 3V 150MA SOT23-5
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    DigiKey RP173N301D-TR-FE Digi-Reel 58 1
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    Mouser Electronics RP173N301D-TR-FE 2,482
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    IXYS Corporation IXFN73N30

    MOSFET N-CH 300V 73A SOT-227B
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    DigiKey IXFN73N30 Tube 300
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    IXYS Corporation IXFK73N30

    MOSFET N-CH 300V 73A TO264AA
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    IXYS Corporation IXFE73N30Q

    MOSFET N-CH 300V 66A SOT-227B
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    DigiKey IXFE73N30Q Tube 10
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    73N30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IXFE 73N30Q HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on = 300 V = 66 A Ω = 46 mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 73N30Q 227TM 728B1

    Untitled

    Abstract: No abstract text available
    Text: IXFX 73N30Q IXFK 73N30Q Q-CLASS VDSS = 300 V ID25 = 73 A Ω RDS on = 42 mΩ Single MOSFET Die trr ≤ 250 µs HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Preliminary data sheet Symbol


    Original     		PDF 73N30Q 247TM 728B1

    73N30Q

    Abstract: No abstract text available
    Text: IXFE 73N30Q HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on = 300 V = 66 A Ω = 46 mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 73N30Q 227TM 728B1 73N30Q

    Untitled

    Abstract: No abstract text available
    Text: IXFX 73N30Q IXFK 73N30Q Q-CLASS VDSS = 300 V ID25 = 73 A Ω RDS on = 45 mΩ Single MOSFET Die trr ≤ 250 ns HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings


    Original     		PDF 73N30Q 247TM 728B1 123B1 728B1 065B1

    73N30Q

    Abstract: No abstract text available
    Text: IXFX 73N30Q IXFK 73N30Q Q-CLASS VDSS = 300 V ID25 = 73 A Ω RDS on = 42 mΩ Single MOSFET Die trr ≤ 250 µs HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings


    Original     		PDF 73N30Q 247TM 728B1 73N30Q

    Untitled

    Abstract: No abstract text available
    Text: ^Çî~åÅÉÇ=qÉÅÜåáÅ~ä=fåÑçêã~íáçå IXFN 73N30Q HiPerFETTM Power MOSFETs Q-Class RDS on Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous ±20 V VGSM Transient ±30


    Original     		PDF 73N30Q OT-227 E153432

    73N30

    Abstract: 1M300 "SOT-227 B" dimensions 6206 sot 89 D-68623 ixfk73n30
    Text: IXFK 73N30 IXFN 73N30 Preliminary Data VDSS = 300V ID25 = 73A HiPerFETTM Power MOSFET RDS on = 45mΩ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr ≤ 200ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C


    Original     		PDF 73N30 200ns O-264 D-68623 73N30 1M300 "SOT-227 B" dimensions 6206 sot 89 ixfk73n30

    73N30

    Abstract: 73N30Q
    Text: IXFN 73N30Q HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on = 300 V = 73 A Ω = 45 mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 73N30Q OT-227 E153432 728B1 123B1 728B1 065B1 73N30 73N30Q

    73N30Q

    Abstract: mosfet j 162
    Text: HiPerFETTM Power MOSFETs IXFK 73N30Q IXFX 73N30Q VDSS = 300 V ID25 = 73 A Ω RDS on = 45 mΩ trr ≤ 250 ns Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings


    Original     		PDF 73N30Q 247TM 728B1 123B1 728B1 065B1 73N30Q mosfet j 162

    Untitled

    Abstract: No abstract text available
    Text: IXFN 73N30Q HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on = 300 V = 73 A Ω = 45 mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 73N30Q OT-227 E153432 728B1 123B1 728B1 065B1

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFK 73N30Q IXFX 73N30Q VDSS = 300 V ID25 = 73 A Ω RDS on = 45 mΩ trr ≤ 250 ns Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings


    Original     		PDF 73N30Q 247TM 728B1 123B1 728B1 065B1

    SOT-227 heatsink

    Abstract: No abstract text available
    Text: IXFN 73N30Q HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on = 300 V = 73 A Ω = 42 mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 73N30Q SOT-227 heatsink

    73N30

    Abstract: "SOT-227 B" dimensions SOT-227 Package ixfk73n30
    Text: HiPerFETTM Power MOSFETs V DSS IXFK 73 N 30 IXFN 73 N 30 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 RDS on 45 mΩ Ω Ω 45 mΩ 300 V 73 A 300 V 73 A trr ≤ 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK


    Original     		PDF O-264 73N30 "SOT-227 B" dimensions SOT-227 Package ixfk73n30

    73N30

    Abstract: ixfk73n30
    Text: HiPerFETTM Power MOSFETs V app IXFK 73 N 30 IXFN 73 N 30 kJ`Ü~ååÉä= båÜ~åÅÉãÉåí= jçÇÉ ^î~ä~åÅÜÉ=o~íÉÇI=eáÖÜ=ÇîLÇíI=içï=íêê IaOR RapEçåF 45 mΩ Ω Ω 45 mΩ 300 V 73 A 300 V 73 A têê ≤ 200 ns TO-264 AA IXFK


    Original     		PDF O-264 73N30 ixfk73n30

    ixfk73n30

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS IXFK 73 N 30 IXFN 73 N 30 300 V 300 V N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 RDS on 73 A 45 mW 73 A 45 mW trr £ 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C


    Original     		PDF O-264 73N30 ixfk73n30

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    ixfk73n30

    Abstract: IXFN73N30
    Text: ÜIXYS VDSS HiPerFET Power MOSFETs 73N30 IXFN 73N30 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ^D25 p DS on 300 V 73 A 45 mQ 300 V 73 A 45 mQ trr <200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN v DSS Tj =25°Cto150°C


    OCR Scan     		PDF IXFK73N30 IXFN73N30 O-264 Cto150 OT-227 E153432 73N30 IXFN73N30

    Untitled

    Abstract: No abstract text available
    Text: j ^ Y S ,X F K 3 N 3 0 IXFN 73N30 'reliminary Data VDSS = 300V lD25 HiPerFET Power MOSFET = 73A RDDS on S( , = 45mn t < 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t TO-264 AA (1XFK) Test Conditions Maximum Ratings IXFK IXFN V DSS


    OCR Scan     		PDF 73N30 200ns O-264 15IXYS D-68623 IXFK73N30

    mosfet 4400

    Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
    Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,


    OCR Scan     		PDF 100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS

    75N1

    Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
    Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH


    OCR Scan     		PDF 76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


    OCR Scan     		PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan     		PDF O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60

    IXfk 75 N 50

    Abstract: 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30
    Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode Type DSS 0 25 DS(on) max. C lss typ. Tc = 25°C New Tc = 25°C n C rss typ. max. qb max. thJC max. D max. pF PF ns nC K/W W IXFH 76N06-11 IXFH 76N06-12 60 76 0.011 0.012 4400


    OCR Scan     		PDF 76N06-11 76N06-12 76N07-11 76N07-12 67N10 75N10 42N20 50N20 50N20S 58N20 IXfk 75 N 50 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30