diode AR S1 99
Abstract: S3 DIODE schottky 486 smps
Text: Advanced Technical Information Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 HiPerFET MOSFET Diode Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 V VGS Continuous ±20 V Transient
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100N10S1
100N10S2
100N10S3
diode AR S1 99
S3 DIODE schottky
486 smps
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1N450
Abstract: IXTF1N450
Text: Advance Technical Information IXTF1N450 High Voltage Power MOSFET VDSS ID25 RDS on = 4500V = 0.9A Ω ≤ 85Ω (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 4500 V VDGR
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IXTF1N450
50/60Hz,
1N450
IXTF1N450
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage Power MOSFET VDSS = 2500V ID25 = 1A Ω RDS on ≤ 40Ω IXTF1N250 N-Channel Enhancement Mode (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR
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IXTF1N250
500mA
1N250
12-17-09-B
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR
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IXTT6N150
IXTH6N150
O-268
O-247
6N150
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Untitled
Abstract: No abstract text available
Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFN26N120P = = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 500mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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IXFN26N120P
300ns
E153432
26N120P
10-24-11-C
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXTA20N65X IXTP20N65X IXTH20N65X X-Class Power MOSFET VDSS ID25 RDS on = 650V = 20A 210m N-Channel Enhancement Mode TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR
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IXTA20N65X
IXTP20N65X
IXTH20N65X
O-263
O-220
O-247
20N65X
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Z 728
Abstract: No abstract text available
Text: OBSOLETE IXFK30N110P IXFX30N110P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = 1100V 30A Ω 360mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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IXFK30N110P
IXFX30N110P
O-264
30N110P
4-01-08-A
Z 728
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Untitled
Abstract: No abstract text available
Text: OBSOLETE IXFN36N110P PolarTM HiPerFETTM Power MOSFET VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGSS
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50/60Hz,
IXFN36N110P
300ns
36N110P
4-01-08-A
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Untitled
Abstract: No abstract text available
Text: IXFN26N120P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 500mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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IXFN26N120P
E153432
300ns
26N120P
10-24-11-C
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26N120P
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR26N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXFR26N120P
300ns
ISOPLUS247
E153432
26N120P
1-07-A
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02N450
Abstract: IXTA02N450HV IXTT02N450HV 02n45 02n4 ixtt02n450
Text: Advance Technical Information IXTA02N450HV IXTT02N450HV High Voltage Power MOSFETs VDSS ID25 RDS on = 4500V = 200mA Ω ≤ 750Ω N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4500 V VDGR
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IXTA02N450HV
IXTT02N450HV
200mA
O-263
O-263)
O-263
O-268
O-268
02N450
IXTT02N450HV
02n45
02n4
ixtt02n450
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR20N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXFR20N120P
300ns
ISOPLUS247
E153432
20N120P
1-07-A
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30N120P
Abstract: mosfet IXFB 30N120P IXFB30N120P nf950
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB30N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXFB30N120P
300ns
PLUS264TM
30N120P
1-07-A
mosfet IXFB 30N120P
IXFB30N120P
nf950
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IXFK20N120P
Abstract: IXFX20N120P IXFX20N120 IXFK20N120 PLUS247 DS99854B
Text: PolarTM Power MOSFET HiPerFETTM IXFK20N120P IXFX20N120P VDSS ID25 = 1200V = 20A Ω ≤ 570mΩ ≤ 300ns RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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IXFK20N120P
IXFX20N120P
300ns
O-264
20N120P
04-03-08-B
IXFK20N120P
IXFX20N120P
IXFX20N120
IXFK20N120
PLUS247
DS99854B
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR30N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXFR30N110P
300ns
ISOPLUS247
E153432
30N110P
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IXFX30N110P
Abstract: PLUS247 ixfk 30N110P
Text: IXFK30N110P IXFX30N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = 1100V 30A Ω 360mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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IXFK30N110P
IXFX30N110P
300ns
O-264
30N110P
4-01-08-A
IXFX30N110P
PLUS247
ixfk 30N110P
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Untitled
Abstract: No abstract text available
Text: High Voltage Power MOSFETs w/ Extended FBSOA VDSS ID25 IXTK20N150 IXTX20N150 = 1500V = 20A Ω < 1Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR
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IXTK20N150
IXTX20N150
O-264
100ms
20N150
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Untitled
Abstract: No abstract text available
Text: PolarTM HiPerFETTM Power MOSFETs VDSS ID25 IXFK26N120P IXFX26N120P = = 1200V 26A Ω 500mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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IXFK26N120P
IXFX26N120P
300ns
O-264
26N120P
10-24-11-C
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20N150
Abstract: IXTK20N150 432 - 070
Text: IXTK20N150 IXTX20N150 High Voltage Power MOSFETs w/ Extended FBSOA VDSS ID25 = 1500V = 20A Ω < 1Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR
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IXTK20N150
IXTX20N150
O-264
O-264)
O-264
PLUS247
PLUS247)
100ms
100ms
20N150
432 - 070
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IXFX26N120P
Abstract: PLUS247 26N120P ixfx26n120 IXFK26N120P ixfk26n120 2030g
Text: PolarTM Power MOSFET HiPerFETTM IXFK26N120P IXFX26N120P VDSS ID25 = 1200V = 26A Ω ≤ 460mΩ ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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IXFK26N120P
IXFX26N120P
300ns
O-264
26N120P
3-28-08-B
IXFX26N120P
PLUS247
ixfx26n120
IXFK26N120P
ixfk26n120
2030g
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXFR16N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXFR16N120P
ISOPLUS247
E153432
300ns
16N120P
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Untitled
Abstract: No abstract text available
Text: VDSS ID25 IXFR16N120P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous
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IXFR16N120P
300ns
ISOPLUS247
E153432
16N120P
4-03-08-A
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40n110p
Abstract: IXFN40 IXFN40N110P
Text: IXFN40N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1100 V VGSS Continuous
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IXFN40N110P
300ns
OT-227
E153432
40N110P
3-28-08-A
IXFN40
IXFN40N110P
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30N110P
Abstract: ISOPLUS247 IXFR30N110P
Text: PolarTM Power MOSFET HiPerFETTM IXFR30N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1100 V VGSS Continuous
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IXFR30N110P
ISOPLUS247
E153432
300ns
30N110P
4-01-08-A
ISOPLUS247
IXFR30N110P
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