Untitled
Abstract: No abstract text available
Text: 2 MEG x 16, 1 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W2MW16PAFA MT45W1MW16PAFA Features Figure 1: 48-Ball VFBGA • Asynchronous and Page Mode interface • Random Access Time: 70ns, 85ns • Page Mode Read Access Sixteen-word page size
|
Original
|
PDF
|
32Mb--standard)
32Mb--low-power
09005aef80d481d3
pdf/09005aef80d48266
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W4MW16PFA MT45W4ML16PFA Features MT45W2MW16PFA MT45W2ML16PFA Figure 1: 48-Ball VFBGA • Asynchronous and Page Mode interface • Random Access Time: 70ns, 85ns
|
Original
|
PDF
|
MT45W4MW16PFA
MT45W4ML16PFA
MT45W2MW16PFA
MT45W2ML16PFA
48-Ball
09005aef80be1ee8
|
Untitled
Abstract: No abstract text available
Text: 4 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W4MW16PFA Features Figure 1: 48-Ball VFBGA • Asynchronous and page mode interface • Random Access Time: 70ns, 85ns • Page Mode Read Access Sixteen-word page size Interpage read access: 70ns, 85ns
|
Original
|
PDF
|
MT45W4MW16P
MT45W4MW16PFA
48-Ball
09005aef80be1ee8
pdf/09005aef80be1f7f
|
Untitled
Abstract: No abstract text available
Text: 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W4MW16PFA MT45W2MW16PFA Features Figure 1: 48-Ball VFBGA • Asynchronous and Page Mode interface • Random Access Time: 70ns, 85ns • Page Mode Read Access Sixteen-word page size
|
Original
|
PDF
|
MT45W4MW16P
MT45W2MW16P
MT45W4MW16PFA
MT45W2MW16PFA
48-Ball
09005aef80be1ee8
pdf/09005aef80be1f7f
|
Untitled
Abstract: No abstract text available
Text: 4 MEG x 16 ASYNC/PAGE CellularRAM 1.0 MEMORY ASYNC/PAGE CellularRAMTM 1.0 MEMORY MT45W4MW16PFA Features Figure 1: 48-Ball VFBGA • Asynchronous and page mode interface • Random Access Time: 70ns, 85ns • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ
|
Original
|
PDF
|
MT45W4MW16PFA
48-Ball
09005aef80be1ee8
pdf/09005aef80be1f7f
|
label infineon application note
Abstract: DEVICE MARKING CODE table INFINEON transistor marking marking code C5 48 ball VFBGA 90 ball VFBGA marking E5 truth table for 1 to 16 decoder
Text: 2 MEG x 16, 1 MEG x 16 ASYNC/PAGE CellularRAM 1.0 MEMORY ASYNC/PAGE CellularRAMTM 1.0 MEMORY MT45W2MW16PAFA MT45W1MW16PAFA Features Figure 1: 48-Ball VFBGA • Asynchronous and Page Mode interface • Random Access Time: 70ns, 85ns • VCC, VCCQ Voltages 1.70V–1.95V VCC
|
Original
|
PDF
|
MT45W2MW16PAFA
MT45W1MW16PAFA
48-Ball
32Mb--standard)
32Mb--low-power
09005aef80d481d3
pdf/09005aef80d48266
label infineon application note
DEVICE MARKING CODE table
INFINEON transistor marking
marking code C5
48 ball VFBGA
90 ball VFBGA
marking E5
truth table for 1 to 16 decoder
|
Qimonda AG
Abstract: 48 ball VFBGA VFBGA P24A 54-BALL MARK FA P24Z
Text: PSRAM and CellularRAM Part Numbering System Micron's part numbering system is available at www.micron.com/numbering PSRAM and CellularRAM MT 45 W 1M W 16 P A FA - 70 1 Micron Technology WT ES Production Status Blank = Production ES = Engineering sample MS = Mechanical sample
|
Original
|
PDF
|
54-ball
48-ball
Qimonda AG
48 ball VFBGA
VFBGA
P24A
MARK FA
P24Z
|
MT29F1G08aba
Abstract: MT29F1G16ABA mt29f1g08 MT47H64M16 MT48LC32M16A2 MT49H32M18FM mt47h128m8 MT9V022 note Vfbga 10x19 MT48LC4M32B2
Text: Extended Operating Temperature Products Micron’s Extensive Line of Extended Operating Temperature Products Ultimate Performance Under Extreme Conditions Modern life is dependent on electronics that operate in exceptionally harsh environments. Cellular base stations and automotive electronics are just
|
Original
|
PDF
|
52-ball
MT29F1G08aba
MT29F1G16ABA
mt29f1g08
MT47H64M16
MT48LC32M16A2
MT49H32M18FM
mt47h128m8
MT9V022 note
Vfbga 10x19
MT48LC4M32B2
|
CY7C1011CV33
Abstract: CY7C1011CV33-10BVI Ricoh 2205 VFBGA CY7C1011BV33 Vfbga package
Text: CY7C1011CV33 128K x 16 Static RAM Features • Pin equivalent to CY7C1011BV33 • High speed — tAA = 10 ns • Low active power — 360 mW max. • Data Retention at 2.0 • Automatic power-down when deselected • Independent control of upper and lower bits
|
Original
|
PDF
|
CY7C1011CV33
CY7C1011BV33
44-pin
48-ball
CY7C1011CV33
48-ball
BV48A.
CY7C1011CV33-10BVI
Ricoh 2205
VFBGA
CY7C1011BV33
Vfbga package
|
BV48A
Abstract: No abstract text available
Text: CY7C1011CV33 128K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0
|
Original
|
PDF
|
CY7C1011CV33
CY7C1011BV33
44-pin
48-ball
CY7C1011CV33
BV48A
|
AN1064
Abstract: CY62167EV30 CY62167EV30LL
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I package configurable as 1M x 16 or as 2M x 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 2.20V–3.60V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA
|
Original
|
PDF
|
CY62167EV30
16-Mbit
48-Ball
48-Pin
AN1064
CY62167EV30LL
|
CY7C681
Abstract: CY62167EV30LL-45ZXIT US1260 CY7C68A
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM 16-Mbit (1M x 16 / 2M x 8) Static RAM Features • TSOP I package configurable as 1M x 16 or 2M x 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C
|
Original
|
PDF
|
CY62167EV30
16-Mbit
48-Ball
48-Pin
CY62167EV30LL.
10-Jun-2011
CY7C681
CY62167EV30LL-45ZXIT
US1260
CY7C68A
|
Untitled
Abstract: No abstract text available
Text: CY7C1061DV33 16-Mbit 1 M x 16 Static RAM 16-Mbit (1 M × 16) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1061DV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. ■ Low active power ❐ ICC = 175 mA at 100 MHz
|
Original
|
PDF
|
CY7C1061DV33
16-Mbit
CY7C1061DV33
I/O15)
|
CY62167EV30LL-45ZXI
Abstract: AN1064 CY62167EV30
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I Package Configurable as 1M x 16 or 2M x 8 SRAM ■ Very High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ■ Wide Voltage Range: 2.20V to 3.60V
|
Original
|
PDF
|
CY62167EV30
16-Mbit
48-Ball
48-Pin
CY62167EV30LL-45ZXI
AN1064
|
|
|
Untitled
Abstract: No abstract text available
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I package configurable as 1M x 16 or as 2M x 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 2.20V–3.60V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA
|
Original
|
PDF
|
CY62167EV30
16-Mbit
48-Ball
48-Pin
|
GLT5160AL16P-7TC
Abstract: GLT5160AL16
Text: G -LINK GLT5160AL16 ADVANCED 16M 2-Bank x 524288-Word x 16-Bit Synchronous DRAM FEATURES Single 3.3 V ±0.3 V power supply u Clock frequency 100 MHz / 125 MHz / 143 MHz/ 166 MHz u Fully synchronous operation referenced to clock rising edge u Dual bank operation controlled by BA (Bank Address)
|
Original
|
PDF
|
GLT5160AL16
524288-Word
16-Bit)
400-mil,
50-Pin
GLT5160AL16P-7TC
GLT5160AL16
|
CY62147CV25
Abstract: CY62147CV30 CY62147CV33 CY62147DV30
Text: CY62147DV30 4-Mbit 256K x 16 Static RAM Features vanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces
|
Original
|
PDF
|
CY62147DV30
I/O15)
70-ns
45-ns
44-lead
CY62147CV25
CY62147CV30
CY62147CV33
CY62147DV30
|
AN1064
Abstract: CY62167EV18 CY62167EV18LL CY62167EV18LL-55BAXI CY62167EV30LL
Text: CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM Features by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when: the
|
Original
|
PDF
|
CY62167EV18
I/O15)
AN1064
CY62167EV18LL
CY62167EV18LL-55BAXI
CY62167EV30LL
|
CY7C1041DV33-12BVJXE
Abstract: AN1064 CY7C1041CV33 CY7C1041DV33 C990 CY7C1041DV33-10
Text: CY7C1041DV33 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features Functional Description • Temperature ranges ❐ Industrial: –40 °C to 85 °C [1] ❐ Automotive-A : –40 °C to 85 °C [1] ❐ Automotive-E : –40 °C to 125 °C The CY7C1041DV33 is a high performance CMOS Static RAM
|
Original
|
PDF
|
CY7C1041DV33
CY7C1041DV33
16-bits.
I/O15)
CY7C1041DV33-12BVJXE
AN1064
CY7C1041CV33
C990
CY7C1041DV33-10
|
AN1064
Abstract: CY62167EV30
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I Package Configurable as 1M x 16 or 2M x 8 SRAM ■ Very High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ■ Wide Voltage Range: 2.20V to 3.60V
|
Original
|
PDF
|
CY62167EV30
16-Mbit
48-Ball
48-Pin
AN1064
|
Untitled
Abstract: No abstract text available
Text: CY62147DV30 4-Mbit 256K x 16 Static RAM Features vanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces
|
Original
|
PDF
|
CY62147DV30
I/O15)
70-ns
45-ns
44-lead
|
55BV
Abstract: AN1064 CY62167EV18 CY62167EV18LL CY62167EV18LL-55BAXI CY62167EV18LL-55BVXI CY62167EV30LL
Text: CY62167EV18 MoBL 16-Mbit 1M x 16 Static RAM Features by 99% when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: the device is
|
Original
|
PDF
|
CY62167EV18
16-Mbit
55BV
AN1064
CY62167EV18LL
CY62167EV18LL-55BAXI
CY62167EV18LL-55BVXI
CY62167EV30LL
|
Untitled
Abstract: No abstract text available
Text: CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM Features by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when: the
|
Original
|
PDF
|
CY62167EV18
48-ball
I/O15)
|
cy7c1041dv
Abstract: CY7C1041CV
Text: CY7C1041DV33 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features Functional Description • Temperature ranges ❐ Industrial: –40 °C to 85 °C [1] ❐ Automotive-A : –40 °C to 85 °C [1] ❐ Automotive-E : –40 °C to 125 °C The CY7C1041DV33 is a high performance CMOS Static RAM
|
Original
|
PDF
|
CY7C1041DV33
CY7C1041DV33
16-bits.
I/O15)
cy7c1041dv
CY7C1041CV
|
