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    VGS MOSFET Search Results

    VGS MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CSD17505Q5A Texas Instruments 30V, N-Channel NexFET™ Power MOSFET with 20 Volt Vgs 8-VSONP -55 to 150 Visit Texas Instruments Buy
    CSD17501Q5A Texas Instruments 30V, N-Channel NexFET™ Power MOSFET with 20 Volt Vgs 8-VSONP -55 to 150 Visit Texas Instruments Buy
    CSD17506Q5A Texas Instruments 30V, N-Channel NexFET™ Power MOSFET with 20 Volt Vgs 8-VSONP -55 to 150 Visit Texas Instruments Buy
    CSD17510Q5A Texas Instruments 30V N-Channel Low Side NexFET Power MOSFET with 20 Volt Vgs 8-VSONP -55 to 150 Visit Texas Instruments Buy
    CSD17507Q5A Texas Instruments 30V N-Channel High Side NexFET Power MOSFET with 20 Volt Vgs 8-VSONP -55 to 150 Visit Texas Instruments Buy

    VGS MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si1551DL-T1

    Abstract: Si1551DL
    Text: Si1551DL Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel rDS(on) (W) ID (A) 1.9 @ VGS = 4.5 V 0.30 3.7 @ VGS = 2.7 V 0.22 4.2 @ VGS = 2.5 V 0.21 0.995 @ VGS = −4.5 V −0.44 1.600 @ VGS = −2.7 V −0.34 1.800 @ VGS = −2.5 V


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    Si1551DL OT-363 SC-70 Si1551DL-T1 Si1551DL-T1--E3 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1551DL Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel rDS(on) (W) ID (A) 1.9 @ VGS = 4.5 V 0.30 3.7 @ VGS = 2.7 V 0.22 4.2 @ VGS = 2.5 V 0.21 0.995 @ VGS = −4.5 V −0.44 1.600 @ VGS = −2.7 V −0.34 1.800 @ VGS = −2.5 V


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    Si1551DL OT-363 SC-70 Si1551DL-T1 S-42353â 20-Dec-04 PDF

    Si5517DU

    Abstract: No abstract text available
    Text: Si5517DU New Product Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) 0.039 @ VGS = 4.5 V ID (A)a 0.045 @ VGS = 2.5 V 6 0.055 @ VGS = 1.8 V 6 0.072 @ VGS = –4.5 V –6 0.100 @ VGS = –2.5 V –6 0.131 @ VGS = –1.8 V


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    Si5517DU 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5517DU New Product Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) 0.039 @ VGS = 4.5 V ID (A)a 0.045 @ VGS = 2.5 V 6 0.055 @ VGS = 1.8 V 6 0.072 @ VGS = –4.5 V –6 0.100 @ VGS = –2.5 V –6 0.131 @ VGS = –1.8 V


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    Si5517DU 51930--Rev. 12-Sep-05 PDF

    Si1551DL

    Abstract: No abstract text available
    Text: Si1551DL Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel rDS(on) (W) ID (A) 1.9 @ VGS = 4.5 V 0.30 3.7 @ VGS = 2.7 V 0.22 4.2 @ VGS = 2.5 V 0.21 0.995 @ VGS = -4.5 V -0.44 1.600 @ VGS = -2.7 V -0.34 1.800 @ VGS = -2.5 V -0.32


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    Si1551DL OT-363 SC-70 S-21374--Rev. 12-Aug-02 PDF

    Si1551DL

    Abstract: Si1551DL-T1
    Text: Si1551DL Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel rDS(on) (W) ID (A) 1.9 @ VGS = 4.5 V 0.30 3.7 @ VGS = 2.7 V 0.22 4.2 @ VGS = 2.5 V 0.21 0.995 @ VGS = −4.5 V −0.44 1.600 @ VGS = −2.7 V −0.34 1.800 @ VGS = −2.5 V


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    Si1551DL OT-363 SC-70 Si1551DL-T1 Si1551DL-T1--E3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1551DL Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel rDS(on) (W) ID (A) 1.9 @ VGS = 4.5 V 0.30 3.7 @ VGS = 2.7 V 0.22 4.2 @ VGS = 2.5 V 0.21 0.995 @ VGS = −4.5 V −0.44 1.600 @ VGS = −2.7 V −0.34 1.800 @ VGS = −2.5 V


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    Si1551DL OT-363 SC-70 Si1551DL-T1 Si1551DL-T1--E3 S-42353--Rev. 20-Dec-42 PDF

    Si4539DY

    Abstract: Si6543DQ Si9939DY
    Text: Si9939DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.16 @ VGS = –4.5 V


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    Si9939DY Si4539DY Si6543DQ S-51308--Rev. 13-Dec-96 PDF

    Si6552DQ

    Abstract: Si9529DY Si9928DY
    Text: Si9928DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V


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    Si9928DY Si9529DY Si6552DQ S-47958--Rev. 15-Apr-96 PDF

    Si4539DY

    Abstract: Si6543DQ Si9939DY 51308
    Text: Si9939DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.16 @ VGS = –4.5 V


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    Si9939DY Si4539DY Si6543DQ S-51308--Rev. 13-Dec-96 51308 PDF

    Si9928DY

    Abstract: 701.43
    Text: Si9928DY Vishay Siliconix Complimentary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Ch N-Channel l rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V


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    Si9928DY S-00652--Rev. 27-Mar-00 701.43 PDF

    Si9939DY

    Abstract: No abstract text available
    Text: Si9939DY Siliconix Dual EnhancementĆMode MOSFETs NĆ and PĆChannel Product Summary VDS (V) NĆChannel Ch l rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = -10 V "3.5 0.12 @ VGS = -6V "3 0.16 @ VGS = -4.5 V


    Original
    Si9939DY S-42910--Rev. PDF

    Si4539DY

    Abstract: Si6543DQ Si9939DY
    Text: Si9939DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.16 @ VGS = –4.5 V


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    Si9939DY Si4539DY Si6543DQ S-47958--Rev. 15-Apr-96 PDF

    Si9928DY

    Abstract: Si6552DQ Si9529DY
    Text: Si9928DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V


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    Si9928DY Si9529DY Si6552DQ S-47958--Rev. 15-Apr-96 PDF

    Si4532DY

    Abstract: Si4539DY Si6543DQ Si9958DY si9958
    Text: Si9958DY Dual Enhancement-Mode MOSFET N- and P- Channel Product Summary VDS (V) N-Channel ID (A) 0.10 @ VGS = 10 V "3.5 0.12 @ VGS = 6 V "3 0.15 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.19 @ VGS = –4.5 V "2.5 20 P-Channel rDS(on) (W)


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    Si9958DY Si4532DY Si4539DY Si6543DQ S-47958--Rev. 15-Apr-96 si9958 PDF

    Si4532DY

    Abstract: Si4539DY Si6543DQ Si9958DY
    Text: Si9958DY Dual Enhancement-Mode MOSFET N- and P- Channel Product Summary VDS (V) N-Channel ID (A) 0.10 @ VGS = 10 V "3.5 0.12 @ VGS = 6 V "3 0.15 @ VGS = 4.5 V "2.5 0.10 @ VGS = –10 V "3.5 0.12 @ VGS = –6V "3 0.19 @ VGS = –4.5 V "2.5 20 P-Channel rDS(on) (W)


    Original
    Si9958DY Si4532DY Si4539DY Si6543DQ S-47958--Rev. 15-Apr-96 PDF

    Si6552DQ

    Abstract: Si9529DY Si9928DY
    Text: Si9928DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V


    Original
    Si9928DY Si9529DY Si6552DQ S-47958--Rev. 15-Apr-96 PDF

    Si9928DY

    Abstract: No abstract text available
    Text: Si9928DY Vishay Siliconix Complimentary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Ch N-Channel l rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V


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    Si9928DY 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS N-Channel RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V 0.072 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V 0.131 at VGS = - 18 V 20 P-Channel


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    Si5517DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS N-Channel RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V 0.072 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V 0.131 at VGS = - 18 V 20 P-Channel


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    Si5517DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si5517DU

    Abstract: Si5517DU-T1-GE3 si5517
    Text: Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS N-Channel RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V 0.072 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V 0.131 at VGS = - 18 V 20 P-Channel


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    Si5517DU 18-Jul-08 Si5517DU-T1-GE3 si5517 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS N-Channel RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V 0.072 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V 0.131 at VGS = - 18 V 20 P-Channel


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    Si5517DU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SI5517DU

    Abstract: SI5517
    Text: Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS N-Channel RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V 0.072 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V 0.131 at VGS = - 18 V 20 P-Channel


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    Si5517DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SI5517 PDF

    Si9928DY

    Abstract: No abstract text available
    Text: Si9928DY Siliconix Dual EnhancementĆMode MOSFETs NĆ and PĆChannel Product Summary VDS (V) NĆChannel Ch l rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = -4.5 V "3.4 0.15 @ VGS = -3.0 V "2.9 0.19 @ VGS = -2.7 V


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    Si9928DY S-42910--Rev. PDF