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    VGS-30V PCHANNEL Search Results

    VGS-30V PCHANNEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL71841SEHL/PROTO Renesas Electronics Corporation Radiation Hardened 30V 32-Channel Analog Multiplexer Visit Renesas Electronics Corporation
    ISL71841SEHF/PROTO Renesas Electronics Corporation Radiation Hardened 30V 32-Channel Analog Multiplexer Visit Renesas Electronics Corporation
    ISL73841SEHVX Renesas Electronics Corporation Radiation Tolerant 30V 32-Channel Analog Multiplexer Visit Renesas Electronics Corporation
    ISL73841SEHF/PROTO Renesas Electronics Corporation Radiation Tolerant 30V 32-Channel Analog Multiplexer Visit Renesas Electronics Corporation
    ISL73841SEHVF Renesas Electronics Corporation Radiation Tolerant 30V 32-Channel Analog Multiplexer Visit Renesas Electronics Corporation

    VGS-30V PCHANNEL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C3025LD

    Abstract: No abstract text available
    Text: DMC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET ADVANCED INFORMATION Product Summary Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max 20mΩ @ VGS = 10V 32mΩ @ VGS = 4.5V 45mΩ @ VGS = -10V 85mΩ @ VGS = -4.5V Package ID MAX TA = +25°C


    Original     		DMC3025LSD AEC-Q101 DS35717 C3025LD PDF

    AO6601

    Abstract: AO6601L
    Text: AO6601 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 3.4A (VGS = 10V) -2.3A (VGS = -10V) RDS(ON) < 60mΩ (VGS = 10V) < 135mΩ (VGS = -10V) < 75mΩ (VGS = 4.5V) < 185mΩ (VGS = -4.5V)


    Original     		AO6601 AO6601 AO6601L PDF

    AO6601

    Abstract: AO6601L
    Text: AO6601 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 3.4A (VGS = 10V) -2.3A (VGS = -10V) RDS(ON) < 60mΩ (VGS = 10V) < 135mΩ (VGS = -10V) < 75mΩ (VGS = 4.5V) < 185mΩ (VGS = -4.5V)


    Original     		AO6601 AO6601/L AO6601 AO6601L -AO6601L PDF

    C3025LS

    Abstract: marking p1S marking c3025LS DS3582 DMHC3025LSD-13
    Text: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = 25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 • • •


    Original     		DMHC3025LSD AEC-Q101 DS35821 C3025LS marking p1S marking c3025LS DS3582 DMHC3025LSD-13 PDF

    C3025LS

    Abstract: diode n1s
    Text: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = 25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 • • •


    Original     		DMHC3025LSD AEC-Q101 DS35821 C3025LS diode n1s PDF

    C3025LS

    Abstract: No abstract text available
    Text: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = +25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 •  


    Original     		DMHC3025LSD AEC-Q101 DS35821 C3025LS PDF

    3f381

    Abstract: zxmhc3f381n8 ZXMHC3F381N8TC
    Text: A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 30V -30V RDS(on) ID TA= 25°C 33mΩ @ VGS= 10V 5.0A 60mΩ @ VGS= 4.5V 3.9A 55mΩ @ VGS= -10V -4.1A 80mΩ @ VGS= -4.5V


    Original     		ZXMHC3F381N8 ZXMHC3F381N8TC 3f381 zxmhc3f381n8 ZXMHC3F381N8TC PDF

    3f381

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 30V -30V RDS(on) ID TA= 25°C 33mΩ @ VGS= 10V 5.0A 60mΩ @ VGS= 4.5V 3.9A 55mΩ @ VGS= -10V -4.1A 80mΩ @ VGS= -4.5V


    Original     		ZXMHC3F381N8 3f381 PDF

    AOP604

    Abstract: No abstract text available
    Text: AOP604 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 7.5A (VGS = 10V) -6.6A RDS(ON) < 28mΩ < 35mΩ (VGS = -10V) < 43mΩ < 58mΩ (VGS = -4.5V) Schottky VDS=30V, IF=3A, VF<0.5V@1A


    Original     		AOP604 AOP604 AOP604L PDF

    3f381

    Abstract: ZXMHC3F381N8TC ZXMHC3F381N8 1000T
    Text: A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 30V -30V RDS(on) ID TA= 25°C 33mΩ @ VGS= 10V 5.0A 60mΩ @ VGS= 4.5V 3.9A 55mΩ @ VGS= -10V -4.1A 80mΩ @ VGS= -4.5V


    Original     		ZXMHC3F381N8 ZXMHC3F381N8TC 522-ZXMHC3F381N8TC ZXMHC3F381N8TC 3f381 ZXMHC3F381N8 1000T PDF

    AOP601

    Abstract: AOP601L
    Text: AOP601 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 7.5A (VGS = 10V) -6.6A RDS(ON) < 28mΩ < 35mΩ (VGS = -10V) < 43mΩ < 58mΩ (VGS = -4.5V) Schottky VDS=30V, I F=3A, VF<0.5V@1A


    Original     		AOP601 AOP601 AOP601L PDF

    ao4600

    Abstract: Complementary POWER MOSFET AO4600 AO4600L PD-00165 P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT MARKING CODE l22 marking 49M 65D2
    Text: AO4600 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.5V) < 50mΩ < 120mΩ (VGS = -2.5V)


    Original     		AO4600 AO4600 AO4600L AO4600L PD-00165 Complementary POWER MOSFET AO4600 PD-00165 P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT MARKING CODE l22 marking 49M 65D2 PDF

    POWER MOSFET AO4600

    Abstract: AO4600 AO4600L
    Text: AO4600 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.5V) < 50mΩ < 120mΩ (VGS = -2.5V)


    Original     		AO4600 AO4600 AO4600L POWER MOSFET AO4600 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4600 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel VDS V = 30V -30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.5V) < 50mΩ < 120mΩ (VGS = -2.5V)


    Original     		AO4600 AO4600 AO4600L AO4600L PD-00165 PDF

    FDS8962C

    Abstract: Dual P-Channel MOSFET 30v fds8962
    Text: FDS8962C Dual N & P-Channel PowerTrench MOSFET Features General Description • Q1: N-Channel 7.0A, 30V RDS on = 0.030Ω @ VGS = 10V RDS(on) = 0.044Ω @ VGS = 4.5V ■ Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V


    Original     		FDS8962C FDS8962C Dual P-Channel MOSFET 30v fds8962 PDF

    FDS8962C

    Abstract: No abstract text available
    Text: FDS8962C Dual N & P-Channel PowerTrench MOSFET Features General Description • Q1: N-Channel 7.0A, 30V RDS on = 0.030Ω @ VGS = 10V RDS(on) = 0.044Ω @ VGS = 4.5V ■ Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V


    Original     		FDS8962C FDS8962C PDF

    C3036LD

    Abstract: 150A3
    Text: NOT RECOMMENDED FOR NEW DESIGN USE DMC3025LSD DMC3036LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device V BR DSS N-CH 30V P-CH -30V RDS(ON) max 36mΩ @ VGS = 10V 61mΩ @ VGS = 4.5V 36mΩ @ VGS = -10V 64mΩ @ VGS = -4.5V Features Package


    Original     		DMC3025LSD DMC3036LSD AEC-Q101 DS31311 C3036LD 150A3 PDF

    Untitled

    Abstract: No abstract text available
    Text: CEM3317 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -6.2A, RDS ON = 33mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. -30V, -4.9A, RDS(ON) = 52mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON).


    Original     		CEM3317 PDF

    DMC3021

    Abstract: C3021L 6a10dc DMC3021LK4
    Text: DMC3021LK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Device V BR DSS Q1 30V Q2 -30V Features and Benefits RDS(ON) max ID max TA = 25°C 21mΩ @ VGS = 10V 9.4A 32mΩ @ VGS = 4.5V 7.3A 39mΩ @ VGS = -10V -6.8A 53mΩ @ VGS = -4.5V


    Original     		DMC3021LK4 AEC-Q101 DS35082 DMC3021 C3021L 6a10dc DMC3021LK4 PDF

    30V vgs

    Abstract: No abstract text available
    Text: DMC3021LK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Device V BR DSS Q1 30V Q2 -30V Features and Benefits RDS(ON) max ID max TA = 25°C 21mΩ @ VGS = 10V 9.4A 32mΩ @ VGS = 4.5V 7.3A 39mΩ @ VGS = -10V -6.8A 53mΩ @ VGS = -4.5V


    Original     		DMC3021LK4 AEC-Q101 DS35082 30V vgs PDF

    CEM9952A

    Abstract: No abstract text available
    Text: CEM9952A Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES 30V, 3.7A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. -30V, -2.9A, RDS(ON) = 100mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON).


    Original     		CEM9952A CEM9952A PDF

    Untitled

    Abstract: No abstract text available
    Text: DMC3036LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device V BR DSS N-CH 30V P-CH -30V RDS(ON) max 36mΩ @ VGS = 10V 61mΩ @ VGS = 4.5V 36mΩ @ VGS = -10V 64mΩ @ VGS = -4.5V Features Package ID TA = +25°C SO-8 6.9A 5.1A -6.0A -5.0 •


    Original     		DMC3036LSD AEC-Q101 DS31311 PDF

    Untitled

    Abstract: No abstract text available
    Text: CEM8968 Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES 5 30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. -30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON).


    Original     		CEM8968 PDF

    Untitled

    Abstract: No abstract text available
    Text: CEM8968 Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES 5 30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. -30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON).


    Original     		CEM8968 PDF