MA6116

Abstract: MA6116 f6 ma6216 MA6116 f5 DIAGRAM MA6116 F6 Part-4 DS3582-3 5501 560 3400 data sheet GEC Plessey Semiconductors XG403
Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA6116 & MA6216 MARCH 1995 DS3582-3.1 MA6116 & MA6216 RADIATION HARD 2048 x 8 BIT STATIC RAM The MA6116 16k Static RAM is configured as 2048 x 8 bits and manufactured using CMOS-SOS high performance, radiation hard,

MA6116

Abstract: MA6116 f6 MA6116 f5
Contextual Info: P ^ p i G E C P L E S S E Y S E M I C O N D U C T O R S DS3582-3.1 M A6116 & M A 6216 RADIATION HARD 2048 x 8 BIT STATIC RAM The MA6116 16k Static RAM is configured as 2048 x 8 bits and manufactured using CMOS-SOS high performance, radiation hard, 3|j.m technology. The MA6216 is manufactured using 2.5|j.m technology

MA6116

Abstract: MA6116 f6 MA6116 f5 MA6216
Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA6116 & MA6216 MARCH 1995 DS3582-3.1 MA6116 & MA6216 RADIATION HARD 2048 x 8 BIT STATIC RAM The MA6116 16k Static RAM is configured as 2048 x 8 bits and manufactured using CMOS-SOS high performance, radiation hard,

MA6216

Abstract: MA6116
Contextual Info: P j p i G E C P L E S S E Y S i: M 1 C O N D U C T O K S DS3582-2.3 M A 6 1 1 6 & M A 6 2 1 6 RADIATION HARD 2048 X 8 BIT STATIC RAM The MA6116 16k Static RAM is configured as 2048 x 8 bits and manufactured using CMOS-SOS high performance, radiation hard,

MA6116

Abstract: MA6116 f6 MA6216 DIAGRAM MA6116 F6 MAX6116 DIAGRAM MA6116 F5 MA621 MA61 MAX6216 MA6116 f5
Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA6116 & MA6216 MARCH 1995 DS3582-3.1 MA6116 & MA6216 RADIATION HARD 2048 x 8 BIT STATIC RAM The MA6116 16k Static RAM is configured as 2048 x 8 bits and manufactured using CMOS-SOS high performance, radiation hard,

3582c

Abstract: DS3582 3583
Contextual Info: HI-3582, HI-3583 3.3V ARINC 429 TERMINAL IC October 2004 GENERAL DESCRIPTION FEATURES ! ! ! ! AR Y ! ! ! ! ARINC specification 429 compatible 3.3V logic supply operation Dual receiver and transmitter interface Analog line driver and receivers connect directly to ARINC bus

DS3582

Contextual Info: HI-3582, HI-3583 ARINC 429 3.3V Terminal IC March 2007 GENERAL DESCRIPTION APPLICATIONS ! Avionics data communication ! Serial to parallel conversion ! Parallel to serial conversion PIN CONFIGURATIONS Top View (See page 14 for additional pin configuration)

Contextual Info: DMP1080UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • • This new generation MOSFET has been designed to minimize the onstate resistance RDS(on and yet maintain superior switching performance, making it ideal for high efficiency power management

HI-3582

Abstract: BD12 BD13 BD15 HI-8282 DS3582
Contextual Info: HI-3582, HI-3583 ARINC 429 3.3V Terminal IC July 2008 GENERAL DESCRIPTION APPLICATIONS ! Avionics data communication ! Serial to parallel conversion ! Parallel to serial conversion PIN CONFIGURATIONS Top View (See page 14 for additional pin configuration)

Contextual Info: HI-3582A, HI-3583A ARINC 429 3.3V Terminal IC with High-Speed Interface GENERAL DESCRIPTION APPLICATIONS The HI-3582A/HI-3583A from Holt Integrated Circuits are silicon gate CMOS devices for interfacing a 16-bit parallel data bus directly to the ARINC 429 serial bus. The

Contextual Info: DMN2501UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCE INFORMATION 20V Features and Benefits RDS(on) max ID TA = 25°C 0.4Ω @ VGS = 4.5V 1.5A 0.5Ω @ VGS = 2.5V 1.3A 0.7Ω @ VGS = 1.8V 1.1A • • • • • • • • • • Low On-Resistance

C3025LS

Abstract: marking p1S marking c3025LS DS3582 DMHC3025LSD-13
Contextual Info: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = 25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 • • •

DS3582

Abstract: EN2 cr4 3583
Contextual Info: HI-3582, HI-3583 ARINC 429 3.3V Terminal IC December 2012 GENERAL DESCRIPTION APPLICATIONS ! Avionics data communication ! Serial to parallel conversion ! Parallel to serial conversion PIN CONFIGURATIONS Top View (See page 14 for additional pin configuration)

HI-3583A

Abstract: 3582a BD12 BD13 BD15 HI-3582A HI-3582APQI
Contextual Info: HI-3582A, HI-3583A ARINC 429 3.3V Terminal IC with High-Speed Interface GENERAL DESCRIPTION APPLICATIONS The HI-3582A/HI-3583A from Holt Integrated Circuits are silicon gate CMOS devices for interfacing a 16-bit parallel data bus directly to the ARINC 429 serial bus. The

DS35

Abstract: HI-8282
Contextual Info: HI-3582, HI-3583 3.3V ARINC 429 TERMINAL IC October 2005 GENERAL DESCRIPTION APPLICATIONS ! Avionics data communication ! Serial to parallel conversion ! Parallel to serial conversion PIN CONFIGURATIONS Top View (See page 14 for additional pin configuration)

C3025LS

Abstract: diode n1s
Contextual Info: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = 25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 • • •

3583

Contextual Info: HI-3582, HI-3583 ARINC 429 3.3V Terminal IC April 2014 GENERAL DESCRIPTION APPLICATIONS • Avionics data communication • Serial to parallel conversion • Parallel to serial conversion PIN CONFIGURATIONS Top View (See page 14 for additional pin configuration)

C3025LS

Contextual Info: DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device V BR DSS N-Channel 30V P-Channel -30V Features RDS(ON) max ID max TA = +25°C 25mΩ @ VGS = 10V 6.0 40mΩ @ VGS = 4.5V 4.6 50mΩ @ VGS = -10V -4.2 80mΩ @ VGS = -4.5V -3.2 •  

Contextual Info: DMP32D4S 30V P-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(on) Max -30V 2.4Ω @ VGS = -10V 4Ω @ VGS = -4.5V • ID Max @TA = +25C -300mA -250mA Low On-Resistance  ESD Protected Gate to 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

P32D

Abstract: P32-D DMP32D4SW
Contextual Info: DMP32D4SW 30V P-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(on) Max -30V 2.4 @ VGS = -10V 4 @ VGS = -4.5V • ID Max @ TA = 25C -250mA -200mA Low On-Resistance  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

DS3582

Abstract: DMN2501UFB4-7
Contextual Info: DMN2501UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V BR DSS 20V Features and Benefits RDS(on) max ID TA = 25°C 0.4Ω @ VGS = 4.5V 1.5A 0.5Ω @ VGS = 2.5V 1.3A 0.7Ω @ VGS = 1.8V 1.1A • • • • • • • • • • Low On-Resistance

Contextual Info: DMN2501UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADV AN CE I N FORM AT I ON 20V Features and Benefits RDS(on) max ID TA = 25°C 0.4Ω @ VGS = 4.5V 1.5A 0.5Ω @ VGS = 2.5V 1.3A 0.7Ω @ VGS = 1.8V 1.1A • • • • • • • • •

DMP32D4S-7

Contextual Info: DMP32D4S 30V P-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(on) Max -30V 2.4 @ VGS = -10V 4 @ VGS = -4.5V • ID Max @ TA = +25C -300mA -250mA Low On-Resistance  ESD Protected Gate to 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

3582c

Abstract: c.i 3582 DS3582 3583
Contextual Info: HI-3582, HI-3583 3.3V ARINC 429 TERMINAL IC December 2005 GENERAL DESCRIPTION APPLICATIONS ! Avionics data communication ! Serial to parallel conversion ! Parallel to serial conversion PIN CONFIGURATIONS Top View (See page 14 for additional pin configuration)