Untitled
Abstract: No abstract text available
Text: DMN2501UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCE INFORMATION 20V Features and Benefits RDS(on) max ID TA = 25°C 0.4Ω @ VGS = 4.5V 1.5A 0.5Ω @ VGS = 2.5V 1.3A 0.7Ω @ VGS = 1.8V 1.1A • • • • • • • • • • Low On-Resistance
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Original
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DMN2501UFB4
AEC-Q101
DS35824
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PDF
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DS3582
Abstract: DMN2501UFB4-7
Text: DMN2501UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V BR DSS 20V Features and Benefits RDS(on) max ID TA = 25°C 0.4Ω @ VGS = 4.5V 1.5A 0.5Ω @ VGS = 2.5V 1.3A 0.7Ω @ VGS = 1.8V 1.1A • • • • • • • • • • Low On-Resistance
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Original
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DMN2501UFB4
AEC-Q101
DS35824
DS3582
DMN2501UFB4-7
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PDF
|
Untitled
Abstract: No abstract text available
Text: DMN2501UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADV AN CE I N FORM AT I ON 20V Features and Benefits RDS(on) max ID TA = 25°C 0.4Ω @ VGS = 4.5V 1.5A 0.5Ω @ VGS = 2.5V 1.3A 0.7Ω @ VGS = 1.8V 1.1A • • • • • • • • •
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Original
|
DMN2501UFB4
AEC-Q101
DS35824
|
PDF
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