Untitled
Abstract: No abstract text available
Text: V23990-P628-F64-PM preliminary datasheet Output Inverter Application flowBOOST 0 900V/36A General conditions H Bridge SPWM VGSon = 10 V VGSoff = 0 V Rgon = 8 Ω Rgoff = 8 Ω IGBT Figure 1 FWD Figure 2 Typical average static loss as a function of output current
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V23990-P628-F64-PM
00V/36A
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM3742-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=36.5dBm at 3.7GHz to 4.2GHz HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS
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TIM3742-4SL
TIM3742-4UL
95GHz
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TIM1213
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM1213-10L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 29.0dBm n HIGH POWER P1dB=40.5dBm at 12.7GHz to 13.2GHz n HIGH GAIN G1dB=6.0 dB at 12.7 GHz to 13.2GHz n BROAD BAND INTERNALLY MATCHED FET
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TIM1213-10L
TIM1213
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM5359-16SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level HIGH POWER P1dB=42.5dBm at 5.3GHz to 5.9GHz HIGH GAIN G1dB=8.5dB at 5.3GHz to 5.9GHz
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TIM5359-16SL
TIM5359-16UL
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM1314-9L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 13.75GHz to 14.5GHz n LOW INTERMODULATION DISTORTION
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TIM1314-9L
75GHz
-25dBc
33dBm
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM3742-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level HIGH POWER P1dB=39.5dBm at 3.7GHz to 4.2GHz HIGH GAIN G1dB=10.0dB at 3.7GHz to 4.2GHz
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TIM3742-8SL
TIM3742-8UL
95GHz
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM8596-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=33.5dBm at 8.5GHz to 9.6GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 8.5GHz to 9.6GHz RF PERFORMANCE SPECIFICATIONS Ta= 25°C
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TIM8596-2
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tim8996-30
Abstract: 7-AA03A
Text: MICROWAVE POWER GaAs FET TIM8996-30 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=45.0dBm at 8.9GHz to 9.6GHz HIGH GAIN G1dB=7.0dB at 8.9GHz to 9.6GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS
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TIM8996-30
7-AA03A)
tim8996-30
7-AA03A
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TIM7785-60ULA
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM7785-60ULA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3= -30 dBc at Pout= 41.0dBm Single Carrier Level HIGH POWER P1dB=48.0dBm at 7.7GHz to 8.5GHz HIGH GAIN G1dB=7.5dB at 7.7GHz to 8.5GHz
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TIM7785-60ULA
7-AA09A)
TIM7785-60ULA
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM4450-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz
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TIM4450-8SL
TIM4450-8UL
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TIM7179-4UL
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM7179-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level HIGH POWER P1dB=36.5dBm at 7.1GHz to 7.9GHz HIGH GAIN G1dB=7.5dB at 7.1GHz to 7.9GHz
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TIM7179-4SL
TIM7179-4UL
TIM7179-4UL
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM5359-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=36.5dBm at 5.3GHz to 5.9GHz HIGH GAIN G1dB=10.5dB at 5.3GHz to 5.9GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS
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TIM5359-4UL
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM5964-30UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=45.0 dBm at 5.9GHz to 6.4GHz HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS
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TIM5964-30UL
2-16G1B)
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TIM1414-4LA-371
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation
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TIM1414-4LA-371
TIM1414-4LA-371
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F585
Abstract: No abstract text available
Text: February 6, 1997 TIM5964-16L-151 1•RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Pow er at 1dB SYMBOL CONDITION P id B Ta= 25 °C MIN. TYP. MAX. UNIT 41.5 42.5 6.0 7.0 — dBm Com pression Point Pow er G ain at 1dB G id B Com pression Point V d s = 10V
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TIM5964-16L-151
TIM5964-
16L-151
2-16G1B)
F585
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Untitled
Abstract: No abstract text available
Text: Apr. 1998 T IM 3 7 4 2 -4 5 S L -3 4 1 1. RF PERFORMANCE SPECIFICATIONS f Ta= 25 °C CHARACTERISTICS SYMBOL CONDITION MIN. TYP. MAX. UNIT Output Power at 1dB 46.0 46.5 PldB — dBm Compression Point VDS= 10V GldB — Power Gain at 1dB 10.0 f=3.3-3.6GHz —
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TIM3742-45SL-34I
3600mfl,
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Untitled
Abstract: No abstract text available
Text: TIM3742-8SL FEATURES: • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po 28.5 dBm, Single Carrier Level ■ HIGH POWER PldB = 39-5 dBm at 3.7 GHz to 4.2 GHz ■ HIGH GAIN G-|dB = 10.0dB at 3.7 GHz to 4.2 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE
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TIM3742-8SL
2-11D1B)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA July 1997 TIM1414-7-252 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 37.0 38.0 — dBm
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TIM1414-7-252
IGS---72pA
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1415-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 6.0 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package
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TIM1415-2
MW50390196
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Untitled
Abstract: No abstract text available
Text: Oct. 1998 PRELIMINARY TIM5964-4SL-031 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS SYMBOL CONDITION MIN. TYP. MAX. UNIT Output Power at ldB PldB 35.5 36.5 dBm Compression Point Vds= 10V Power Gain at ldB GldB f-5.9-6.4GHz 8.0 9.0 dB IDS-1.1A
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TIM5964-4SL-031
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •H IG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB
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28dBm
JS9P05-AS
38GHz
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5252 F ic
Abstract: No abstract text available
Text: TOSHIBA July 1997 TIM1414-5-252 1. R F PERFO R M A N CE SP E C IFIC A T IO N S CHARACTERISTICS SYMBOL Output Power at ldB Compression Point P i dB Power Gain at ldB Compression Point GldB CONDITION MIN. TYP. MAX. UNIT 36.5 37.5 — dBm 4.5 5.5 — dB - 2.0
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TIM1414-5-252
-72jjA
5252 F ic
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Untitled
Abstract: No abstract text available
Text: TIM7785-30SL FEATURES: • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po = 34.5 dBm, Single Carrier Level ■ HIGH POWER PldB = 45 dBm at 7.7 GHz to 8.5 GHz ■ HIGH EFFICIENCY 77 add = 34 % at 7.7 GHz to 8.5 GHz ■ HIGH GAIN G-idB = 6.0dB at 7.7 GHz to 8.5 GHz
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TIM7785-30SL
TIM7785-30SL-----
-----------------------------T1M7785-30SL
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Untitled
Abstract: No abstract text available
Text: TOSHIBA July 1997 TIM1414-15-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS O utput Power at ldB Compression Point Power Gain at ldB Compression Point D rain C urrent — ; Power Added Efficiency SYMBOL PldB GldB CONDITION VDS= 9V f= 13.75-14.5GHz Ids
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TIM1414-15-252
145mA
2-11C1B)
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