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    VISHAY 80-V TMBS Search Results

    VISHAY 80-V TMBS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL28617VY100EV1Z Renesas Electronics Corporation 40V Precision In-Amp Evaluation Board With Vishay Bulk Metal® Foil Resistors Visit Renesas Electronics Corporation
    ISL28617VY10EV1Z Renesas Electronics Corporation 40V Precision In-Amp Evaluation Board With Vishay Bulk Metal® Foil Resistors Visit Renesas Electronics Corporation
    ISL28617VY25EV1Z Renesas Electronics Corporation 40V Precision In-Amp Evaluation Board With Vishay Bulk Metal® Foil Resistors Visit Renesas Electronics Corporation
    ISL81802FRTZ-T7A Renesas Electronics Corporation 80V Dual Synchronous Buck Controller Visit Renesas Electronics Corporation
    ISL81802FVEZ-T Renesas Electronics Corporation 80V Dual Synchronous Buck Controller Visit Renesas Electronics Corporation

    VISHAY 80-V TMBS Datasheets Context Search

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    death metal diagram

    Abstract: No abstract text available
    Text: New Product TY.S080A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 80 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM


    Original     		S080A6. TY056S080A6OT TY073S080A6PT TY085S080A6OU TY102S080A6OU 11-Mar-11 death metal diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product TY.S080A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 80 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM


    Original     		S080A6. TY056S080A6OT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product TY.S080A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 80 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM


    Original     		S080A6. TY056S080A6OT TY073S080A6PT TY085S080A6OU TY102S080A6OU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product VFT1080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		VFT1080C ITO-220AB 22-B106 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. PDF

    Untitled

    Abstract: No abstract text available
    Text: VFT1080C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		VFT1080C ITO-220AB 22-B106 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product VFT1080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		VFT1080C ITO-220AB 22-B106 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product VFT1080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		VFT1080C ITO-220AB 22-B106 2002/95/EC 2002/96/EC 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: VBT1080C-M3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		VBT1080C-M3 O-263AB J-STD-020, VBT1080C 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product VFT1080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		VFT1080C ITO-220AB 22-B106 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product VT1080C, VIT1080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB TO-262AA • Low forward voltage drop, low power losses K • High efficiency operation


    Original     		VT1080C, VIT1080C O-220AB O-262AA 22-B106 AEC-Q101 VT1080C 2002/95/EC 2002/96/EC PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product VT1080C, VFT1080C, VBT1080C, VIT1080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses


    Original     		VT1080C, VFT1080C, VBT1080C, VIT1080C ITO-220AB O-220AB J-STD-020, O-263AB 2002/95/EC 2002/96/EC PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product VT1080C, VFT1080C, VBT1080C, VIT1080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses


    Original     		VT1080C, VFT1080C, VBT1080C, VIT1080C O-220AB ITO-220AB J-STD-020, O-263AB VT1080C VFT1080C PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product VT1080C, VIT1080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB TO-262AA • Low forward voltage drop, low power losses K • High efficiency operation


    Original     		VT1080C, VIT1080C O-220AB O-262AA 22-B106 AEC-Q101 VT1080C 2002/95/EC 2002/96/EC PDF

    Untitled

    Abstract: No abstract text available
    Text: VT1080C-E3, VFT1080C-E3, VBT1080C-E3, VIT1080C-E3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses


    Original     		VT1080C-E3, VFT1080C-E3, VBT1080C-E3, VIT1080C-E3 O-220AB ITO-220AB J-STD-020, O-263AB VFT1080C VT1080C PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product VT1080C, VIT1080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses K • High efficiency operation


    Original     		VT1080C, VIT1080C O-220AB O-262AA 22-B106 AEC-Q101 VT1080C 2002/95/EC 2002/96/EC PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product VFT3080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		VFT3080S ITO-220AB 22-B106 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. PDF

    Untitled

    Abstract: No abstract text available
    Text: VFT3080S-M3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		VFT3080S-M3 ITO-220AB 22-B106 VFT3080S 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    vft3080s

    Abstract: No abstract text available
    Text: New Product VFT3080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		VFT3080S ITO-220AB 22-B106 2002/95/EC 2002/96/EC 11-Mar-11 vft3080s PDF

    Untitled

    Abstract: No abstract text available
    Text: VT1080C, VIT1080C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses


    Original     		VT1080C, VIT1080C O-220AB O-262AA 22-B106 AEC-Q101 VT1080C 2002/95/EC. 2002/95/EC PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product VT1080C, VIT1080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB TO-262AA • Low forward voltage drop, low power losses K • High efficiency operation


    Original     		VT1080C, VIT1080C O-220AB O-262AA 22-B106 AEC-Q101 VT1080C 2002/95/EC 2002/96/EC PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product VFT3080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		VFT3080C ITO-220AB 22-B106 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product VFT2080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		VFT2080S ITO-220AB 22-B106 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product VFT1080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		VFT1080S ITO-220AB 22-B106 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. PDF

    Untitled

    Abstract: No abstract text available
    Text: VFT1080S www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		VFT1080S ITO-220AB 22-B106 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF