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    Microchip Technology Inc VN1206L-G

    MOSFET N-CH 120V 230MA TO92-3
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    Microchip Technology Inc VN1206L-G-P002

    MOSFET N-CH 120V 230MA TO92-3
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    Microchip Technology Inc VN1206L

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
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    VN1206L Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VN1206L Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    VN1206L Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    VN1206L Vishay N-Channel Enhancement-Mode MOSFET Transistor Original PDF
    VN1206L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VN1206L Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VN1206L Unknown FET Data Book Scan PDF
    VN1206L Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VN1206L Temic Semiconductors N-Channel Enhancement Mode MOSFET Transistors Scan PDF
    VN1206L Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    VN1206L-G Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 120V 0.23A TO92-3 Original PDF
    VN1206L-G-P002 Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 120V 0.23A TO92-3 Original PDF

    VN1206L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VN1206 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSs I R BVdgs 120V q S ON Order Number / Package '« O N ) (max) (min) TO-92 6.0Q 1.0A VN1206L Features Advanced DMOS Technology □ Free from secondary breakdown □


    OCR Scan     		VN1206 VN1206L PDF

    Untitled

    Abstract: No abstract text available
    Text: VN1206L Vishay Siliconix N-Channel 120-V D-S MOSFET PRODUCT SUMMARY V (B R )D S S Min (V) 120 TD S (on) M a x ( Q ) VoS(th) (V) Id (A) 6 a vGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS • Low On-Resistance: 3.8 Q • Low Threshold: 1.4 V • Low Input Capacitance: 35 pF


    OCR Scan     		VN1206L 1206L S-04279-- 16-Jul-01 O-226AA) PDF

    Untitled

    Abstract: No abstract text available
    Text: □ï SUPERTEX INC 1 7 07732^5 DOOlbSÖ h V N 1206 V N 1210 r- -if-os’ N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information Order Number / Package b v dss/ R DS(ON) *D(ON) BVDgs (max) (min) TO-39 TO-92 TO-220 120 V 60 1.0A VN1206B VN1206L


    OCR Scan     		VN1206B VN1210B VN1206L VN1210L O-220 VN1206D VN1210D well1210 VN1210 VN1206 PDF

    VN1206M

    Abstract: No abstract text available
    Text: VN 1206 SERI ES N-Channel Enhancement-Mode MOS Transistors B'SSSSSS PRODUCT SUMMARY PART NUMBER V BRJDSS VN1206L VN1206M r DS(ON •d (A) (A) PACKAGE 120 6 0.23 TO-92 120 6 0.26 TO-237 3 DRAIN TO-237 BOTTOM VIEW Performance Curves: VNDQ12 Jet* 1 SOURCE 2 GATE


    OCR Scan     		VN1206L VN1206M O-237 VNDQ12 VN1206M PDF

    VNDQ1

    Abstract: 1206L VN1206L
    Text: VN1206L Vishay Siliconix N-Channel 120-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 120 6 @ VGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,


    Original     		VN1206L O-226AA 18-Jul-08 VNDQ1 1206L VN1206L PDF

    VN1210M

    Abstract: VN1206M VN1206L
    Text: VN1206L/M, VN1210M N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V 0.8 to 2 0.2 VN1206L VN1206M 120 VN1210M


    Original     		VN1206L/M, VN1210M VN1206L VN1206M O-226AA) P-38211--Rev. 15-Aug-94 VN1210M VN1206M VN1206L PDF

    VN1206L

    Abstract: VN1210M VN1206M
    Text: VN1206L/M, VN1210M N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V 0.8 to 2 0.2 VN1206L VN1206M 120 VN1210M


    Original     		VN1206L/M, VN1210M VN1206L VN1206M O-226AA) P-38211--Rev. 15-Aug-94 VN1206L VN1210M VN1206M PDF

    VN1206

    Abstract: vn1210
    Text: VN1206 VN1210 in c . N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package b v dss / ^D S O N I d i ON) b v dgs (max) (min) TO-39 TO-92 TO-220 120V 6n 1.0A VN1206B VN1206L VN1206D 120 V io n


    OCR Scan     		VN1206 VN1210 VN1206B VN1206L VN1210L O-220 VN1206D VN1210 PDF

    vn1206

    Abstract: No abstract text available
    Text: S i I I m m m m tß iw itfu w i | r ZJ r Ï u . f VN1206 VN1210 Irir', » N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^ D S O N I d (ON) b v dgs (max) (min) TO-39 TO-92 TO-220 VN1206B VN1206L VN1206D


    OCR Scan     		VN1206 VN1210 VN1206B VN1206L VN1210L O-220 VN1206D VN1210 PDF

    1206L

    Abstract: VN1206L
    Text: VN1206L Vishay Siliconix N-Channel 120-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 120 6 @ VGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,


    Original     		VN1206L O-226AA O-226AA) S-04279--Rev. 16-Jul-01 1206L VN1206L PDF

    VN1206

    Abstract: VN1206L
    Text: VN1206 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package 120V 6.0Ω 1.0A VN1206L TO-92 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a


    Original     		VN1206 VN1206L VN1206 VN1206L PDF

    Untitled

    Abstract: No abstract text available
    Text: VN1206L Vishay Siliconix N-Channel 120-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 120 6 @ VGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,


    Original     		VN1206L O-226AA 1206L 08-Apr-05 PDF

    VN1206L

    Abstract: VN1206M VN1210M
    Text: VN1206L/M, VN1210M Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN1206L VN1206M 1 120 VN1210M rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V


    Original     		VN1206L/M, VN1210M VN1206M VN1206L O226AA) P-38211--Rev. VN1206L VN1206M VN1210M PDF

    vn1210m

    Abstract: No abstract text available
    Text: am & SS VNDQ12 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-237 • VN1206M, VN1210M Single TO-92 TO-226AA • VN1206L, VN1210L, TN1206L Single Chip • Available as VNDQ4CHP DEVICE TYPICAL CHARACTERISTICS Output Characteristics for Low Gate Drive


    OCR Scan     		VNDQ12 O-237 VN1206M, VN1210M VN1206L, VN1210L, TN1206L O-226AA) VNDQ12 PDF

    Untitled

    Abstract: No abstract text available
    Text: V N 1206 V N 1210 inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices B Vdss I Order Number / Package ^DS O N *D(0N> BV dgs (max) (min) TO-39 TO-92 TO-220 120 V 60 1.0A VN1206B VN1206L VN1206D 120 V 1 0 ÌÌ


    OCR Scan     		VN1206B VN1206L VN1210L O-220 VN1206D temperatur06 VN1210 VN1210 PDF

    yn1206

    Abstract: No abstract text available
    Text: Temic Siliconix_YN1206L/M, YN1210M N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Mín (V) VN1206L VN1206M 120 VN1210M r DS(on) Max (Q) VGS(th) Id (A) (V) 6@ VGS = 10 V 0.8 to 2 0.23 6@ VGS = 10 V 0.8 to 2 0.26


    OCR Scan     		YN1206L/M, YN1210M VN1206L VN1206M VN1210M P-38211--Rev. VN1206L/M, VN1210M O-226AA) yn1206 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. V N 1206 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ b v dgs RdS ON (max) Id(ON) (min) 120V 6.0Q. 1.0A Order Number / Package TO-92 VN1206L Features Advanced DMOS Technology □ Free from secondary breakdown □


    OCR Scan     		VN1206L PDF

    3821J

    Abstract: No abstract text available
    Text: Tem ic VN1206L/M, VN1210M Se m i c f l n d u c K i r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V ) r DS(on) VN1206M Vcs(ih)(V) I d (A ) 0.8 to 2 0.23 6 @ V o s - 10 V 0.8 to 2 0.26 10 @ V q s = 2.5 V 0.8 to 2


    OCR Scan     		VN1206L/M, VN1210M 1206L VN1206M VNI21QM P-38211-- 15-Aug-94 O-226AA) 3821J PDF

    VN1210M

    Abstract: VN1206L VN1206M
    Text: VN1206L/M, VN1210M N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V 0.8 to 2 0.2 VN1206L VN1206M 120 VN1210M


    Original     		VN1206L/M, VN1210M VN1206L VN1206M O-226AA) P-38211--Rev. 15-Aug-94 VN1210M VN1206L VN1206M PDF

    VN1206

    Abstract: VN1206L
    Text: VN1206 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package 120V 6.0Ω 1.0A VN1206L TO-92 Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a


    Original     		VN1206 VN1206L VN1206 VN1206L PDF

    vn1210l transistor

    Abstract: VN1206 supertex 08 vn1210 transistor VN1206 VN1206B VN1206D VN1206L VN1210 VN1210B VN1210D
    Text: ni SUPERTEX INC 1 7 07732^5 GGDltSfi b J ~ VN1206 VN1210 r- N-Channe! Enhancement-Mode Vertical DMOS Power FETs 3f -os' Ordering Information Order Num ber / Package b v dss/ R DS(ON) *D(ON) BVDgs (max) (min) TO-39 TO-92 TO-220 120 V 6 fi 1.0A VN1206B VN1206L


    OCR Scan     		fi773STS VN1206 VN1210 O-220 VN1206B VN1206L VN1206D VN1210B VN1210L VN1210D vn1210l transistor VN1206 supertex 08 vn1210 transistor VN1206D VN1210 VN1210D PDF

    VN1206L

    Abstract: VNI210M VN1206M VN1210M
    Text: Tem ic VN1206L/M, VN1210M S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number *DS on V(BR)DSS M i n (V ) VN1206L VN1206M 120 VN1210M Features Low On-Resistance: 3.8 Q Low Threshold: 1.4 V Low Input Capacitance: 35 pF


    OCR Scan     		vn1206l/m, vn1210m VN1206L VN1206M VNI210M O-226AA) P-38211â 15-Aug-94 VNI210M VN1206M VN1210M PDF

    VN1206L

    Abstract: No abstract text available
    Text: VN1206L Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistor PRODUCT SUMMARY V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 120 6 @ VGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS


    Original     		VN1206L O-226AA O-226AA) S-00591--Rev. 03-Apr-99 VN1206L PDF

    IRF150CF

    Abstract: GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTF152 YTFP150 2SK747
    Text: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Max (V) Clsa Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 BUZ349 BUZ349 SFN152 YTFP152


    Original     		BUZ349 SFN152 YTFP152 YTF152 IRFP152 RFH35Nl0 RFK35Nl0 PB125N60HM PB125N60HP IRF150CF GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTFP150 2SK747 PDF