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    VOLTAGE111 Search Results

    VOLTAGE111 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE524V42 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage680 V(RMS) Max. Applied Voltage420 V(DC) Max. Applied Voltage560 I(TM) Max.(A) Peak Current6.5k V(C) Nom. (V) Clamping Voltage1110 @I(PP) (A) (Test Condition)1.0m W(TM) Max.(J) Transient Energy160


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    NTE524V42 Voltage680 Voltage420 Voltage560 Voltage1110 Energy160 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SMC100 Diodes Unidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage100 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage100 I(PPM) Max.(A)Pk.Pulse Current8.4


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    1SMC100 Voltage100 Voltage111 StyleDO-214AA PDF

    Untitled

    Abstract: No abstract text available
    Text: .M i P ln r k W n r k c ^ 3.3V SINGLE SUPPLY 1:9 PECL-TO-TTL SYNERGY PRELIMINARY SY10H641L SY100H641L SEM ICONDUCTOR FEATURES DESCRIPTION • 3 .3 V p o w e r s u p p ly ■ P E C L -to -T T L v e rs io n o f p o p u la r E C L in P S E111 ■ G u a ra n te e d lo w s k e w s p e c ific a tio n


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    SY10H641L SY100H641L SY10H641 SY10H641LJCTR SY100H641LJC Y100H641LJCTR J28-1 PDF

    TT 2246

    Abstract: No abstract text available
    Text: >4MCC PRELIMINARY SPECIFICATION S O N E T/S D H /A TM O C-48 8:1 TR AN SM ITTER FEATURES GENERAL DESCRIPTION • Micro-power Bipolar technology • Complies with ANSI, Bellcore, and ITU-T specifications • On-chip high-frequency PLL for clock generation • Supports 2.4 GHz OC-48


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    S3041 OC-48) S3041 OC-48 S3041. OC-48 /DW0045-28 TT 2246 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY7C1020 3 2 K x 16 Static RAM Features BLE is LOW, then data from I/O pins <l/0-| through l/0 8), is written into the location specified on the address pins (A0 through A14). If byte high enable (BHE) is LOW, then data from I/O pins (l/09 through l/0 16) is written into the location speci­


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    CY7C1020 44-pin 400-mil PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C197 256Kx 1 Static RAM Features vided by an active LOW chip enable CE and three-state driv­ ers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns Writing to the device is accomplished when the chip enable


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    CY7C197 256Kx CY7C197 PDF

    ku 602 vc

    Abstract: No abstract text available
    Text: B U R R —B R O U J N B U CORP R R H E - B R O W D |l7 3 1 3 b S 0D14ûfc.5 ô I OPA121 N 1 Low Cost Precision OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW NOISE: 6 n V /V H z typ at 10kHz • OPTOELECTRONICS • LOW BIAS CURRENT: 5pA max • DATA ACQUISITION


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    OPA121 10kHz 0PEN-L00P OPA121 AD547 ku 602 vc PDF

    15 pin to usb

    Abstract: No abstract text available
    Text: Pentium /!I, 6x86, K6 Clock Synthesizer/Driver for Desktop/ Mobile PCs with Intel 82430TX and 2 DIMMs or 3 SO-DIMMs Features • Mixed 2.5V and 3.3V operation • Complete clock solution to meet requirem ents of Pen­ tium®, Pentium® II, 6x86, or K6 motherboards


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    82430TX 15 pin to usb PDF

    PR3000A

    Abstract: MIPS R3000A
    Text: PIPER” ÂPW ÂM CE Ö 1N IF @ 1M /Ä T B Ü [M ! FEATURES: • Highly Integrated single-chip RISC processor that contains the following: - CPU PR3000A based - FPA (PR3010A based) - Write/Read Buffer - Instruction and Data Caches - 32-bit Counters/Timers


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    PR3000A PR3010A 32-bit 64entry 64-blt 160-pin MIPS R3000A PDF

    SD5501

    Abstract: TELEDYNE SD5501J
    Text: TELEDYNE COMPONENTS 5ÖE D • û ilT b O a GODtiMS4 T SD5501 SEMICONDUCTOR N-CHANNEL DEPLETION-MODE 4-CHANNEL D-MOS FET ARRAY ORDERING INFORMATION Sorted Chips in Waffle Pack 16-Pin Ceramic Dual In-tine Package 16-Pin Plastic Dual In-Line Package SD5501CHP&#39;


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    SD5501 SD5501CHP- 16-Pin SD5501J 16-Plrt SD55Q1N 30Vdc Voltage111 Match111, TZ5911 SD5501 TELEDYNE SD5501J PDF

    relay Re 04501

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031
    Text: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997


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    ENGI86 4970A E1199 relay Re 04501 JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031 PDF

    ASZ18

    Abstract: No abstract text available
    Text: H M 5 3 8 1 2 1 J P / Z P - 1 0 / 1 2 / 1 5 — Preliminary 131,072 x 8-Blt Multiport CMOS Video Random Access Memory • DESCRIPTION The HM538121 is a 1-Mbit multiport video RAM equipped with a 128-kword x 8-bit dynamic RAM and a 256-word x 8-bit SAM serial


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    HM538121 128-kword 256-word ASZ18 PDF

    BSN20 MARKING

    Abstract: BSN20
    Text: G en era l \J S e m i c o n d u c t o r _ BSN20 N-Channel Enhancement-Mode MOSFET % Vds 5 0 V RdS ON 6 f i Id 1 8 0 m A TO-236AB (SOT-23) •122(3.1) .110(2.8) 0.031 (0.8) .016 (0.4) T o p V ie w R+ 1— co m 0 035 (0.9) CO in m o o Pin Configuration


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    BSN20 O-236AB OT-23) OT-23 OT-23, S0T-23-6L BSN20 MARKING BSN20 PDF

    CY7B161-12PC

    Abstract: b1615 B1616
    Text: PRELIMINARY r ’V P P F Q O 16,384x4 Static RAM Separate I/O SEMICONDUCTOR Features Functional Description • High speed - 10 ns t* The CY7B161 and CY7B162 are high-performance BiCMOS static RAMs orga­ nized as 16,384 by 4 bits with separate I/O. These RAMs are developed by Aspen


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    CY7B161 CY7B162 7B161) 384x4 8-A-00014-A CY7B161-12PC b1615 B1616 PDF

    spusb1

    Abstract: No abstract text available
    Text: - I l l ¿ t'— ; /I _ Protection Circuits Upstream USB Port Terminator with 4M SPUSB1 Series The SPUSB1AJT, SPUSB1CJT and SPUSB1BJT are single-channel USB upstream -port term ination networks. The SPUSB1 Series integrates EMI/RFI filter components R1 and C1,


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    SC70-6 SC70-6 spusb1 PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    7B164-15

    Abstract: 910U
    Text: _ PRELIM INARY SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • BiCMOS for optimum speed/power • High speed - 10 ns t* T he CY7B164 and CY7B166 are high-performance BiCMOS static RAMs organized as 16,384 x 4 bits. These RAMs are devel­


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    CY7B164 CY7B166 7B166) 7B166 8-A-00015-A 7B164-15 910U PDF

    Untitled

    Abstract: No abstract text available
    Text: E M M OPA121 ' Ií Tm^ J I í B U R R - BROW N« I Low Cost Precision ÆJffet OPERATIONAL AMPLIFIER APPLICATIONS FEATURES • LO W NOISE: 6 n V / V H z typ at 10kHz • O P TO ELEC TR O N IC S • LOW BIAS C U RR EN T: 5pA max • DATA ACQUISITION • LO W O F F S ET : 2mV max


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    OPA121 10kHz OPA12I PDF

    CY7C186-45PC

    Abstract: CY7C186-55PC 7C186-20PC
    Text: CY7C185 CY7C186 CYPRESS SEMICONDUCTOR Features Automatic power-down when deselected CMOS for optimum speed/power High speed - 20 ns Low active power - 550 mW Low Standby Power - 110 mW TTL-compatible inputs and outputs Capable of withstanding greater than


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    CY7C185 CY7C186 185-20L 185-25PC 85-25V 185-25DC 185-25LC 185-35PC 85-35V 185-35D CY7C186-45PC CY7C186-55PC 7C186-20PC PDF

    J FET RF Cascode Input

    Abstract: T431 Teledyne Semiconductor teledyne fet u
    Text: TELEDYNE C O M P O N EN T S döE » MI Ö TlTbO H 000 3430 T - US'- b « -S '* SD2100 SEMICONDUCTOR_ N-CHANNEL DEPLETION-MODE D-MOS FET ORDERING INFORMATION TO-2Q6AF (TO-72 Hermetic Package SD2100DË with Shorting Ring on lead«


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    SD2100 SD2100DË SD2100DE/Ft SO-16) OT-143) J FET RF Cascode Input T431 Teledyne Semiconductor teledyne fet u PDF

    diagram of ic 7941

    Abstract: Teledyne Semiconductor
    Text: eäE TELEDYNE COMPONENTS Ir M Jæ Æ D ÜTL7bü2 QOUb4b7 ? m • Æ TZ5 9 1 1 SEMICONDUCTOR N-CHANNEL DEPLETION-MODE DUAL D-MOS FET ORDERING INFORMATION TQ-78 Hermetic Package TZ5911HD SO-8 Surface Mount Package T259110V FEATURES APPLICATIONS ■ ■ ■ ■


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    TQ-78 TZ5911HD T259110V OT-143) diagram of ic 7941 Teledyne Semiconductor PDF

    Untitled

    Abstract: No abstract text available
    Text: fax id: 3553 7 ^ CYPRESS P R E L IM IN A R Y C Y 2 3 1 0 A N Z 3.3V SDRAM Buffer for Mobile PCs with 4 SO-DIMMs Features Functional Description One input to 10 output buffer/driver Supports up to four SDRAM SO-DIM Ms Two additional outputs for feedback l2C interface for output control


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    CY2310ANZ PDF

    Untitled

    Abstract: No abstract text available
    Text: * S O N E T /S D H /A T M O C - 1 2 C L O C K SYNERGY RECOVERING TRAN SC EIVER '.M iC O N D U C T O R FE A T U R E S • ■ A complete SONET/SDH Transmitter & Receiver ■ Complies with Bellcore, ITU/CCITT and ANSI specifications ■ Two on-chip PLLs: One for clock generation &


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    OC-12) 44MHz, 84MHz 76MHz PM5355 S/UNI-622 CKE622 OC-12 SY69712 SY69712 PDF

    HYUNDAI i10

    Abstract: No abstract text available
    Text: CY62256V25 PRELIMINARY 32K X 8 2.5V Static RAM Features active LOW output enable OE and three-state drivers. The device has an automatic power-down feature, reducing the power consumption by more than 98% when deselected. • Single 2.5V power supply • Ideal for low-voltage and low-power cache memory


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    CY62256V25 HYUNDAI i10 PDF