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    VQA 10 Search Results

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    VQA 10 Price and Stock

    Alpine Electronics (Asia) Ltd SPVQA10604

    Water-Proof Detector Switch SPDT 0.1A 12VDC Press-Fit Panel Mount Tray - Trays (Alt: SPVQA10604)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SPVQA10604 Tray 16 Weeks 4,800
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    • 10000 $0.63504
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    Alpine Electronics (Asia) Ltd SPVQA10402

    Water-Proof Detector Switch SPST 0.1A 12VDC Press-Fit Panel Mount Tray - Trays (Alt: SPVQA10402)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SPVQA10402 Tray 16 Weeks 4,800
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    • 10000 $0.63504
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    Mouser Electronics SPVQA10402
    • 1 -
    • 10 -
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    • 10000 $0.961
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    Alpine Electronics (Asia) Ltd SPVQA10203

    Water-Proof Detector Switch SPST 0.1A 12VDC Press-Fit Panel Mount Tray - Trays (Alt: SPVQA10203)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SPVQA10203 Tray 16 Weeks 4,800
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    Chip One Stop SPVQA10203 Tray 1,200
    • 1 $2.42
    • 10 $1.18
    • 100 $0.879
    • 1000 $0.728
    • 10000 $0.728
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    Alpine Electronics (Asia) Ltd SPVQA10103

    Water-Proof Detector Switch SPST 0.1A 12VDC Press-Fit Panel Mount Tray - Trays (Alt: SPVQA10103)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SPVQA10103 Tray 16 Weeks 4,800
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.63504
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    Mouser Electronics SPVQA10103
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.961
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    Chip One Stop SPVQA10103 Tray 1,200
    • 1 $2.42
    • 10 $1.18
    • 100 $0.879
    • 1000 $0.728
    • 10000 $0.728
    Buy Now

    Alpine Electronics (Asia) Ltd SPVQA10302

    Water-Proof Detector Switch SPST 0.1A 12VDC Press-Fit Panel Mount Tray - Trays (Alt: SPVQA10302)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SPVQA10302 Tray 16 Weeks 4,800
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.63504
    Buy Now
    Mouser Electronics SPVQA10302
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.961
    Get Quote
    Chip One Stop SPVQA10302 Tray 1,200
    • 1 $2.42
    • 10 $1.18
    • 100 $0.879
    • 1000 $0.728
    • 10000 $0.728
    Buy Now

    VQA 10 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    VQA 23

    Abstract: No abstract text available
    Text: date 09/23/2013 page 1 of 7 SERIES: VQA │ DESCRIPTION: DC-DC CONVERTER FEATURES • • • • • • designed for IGBT driver modules small footprint 3,000 Vac isolation short circuit protection temperature range -40~105°C efficiency up to 80% input


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    VQA-S9-D15-SIP VQA-S12-D15-SIP VQA-S15-S9-SIP VQA-S15-D9-SIP VQA-S15-D15-rranty. VQA 23 PDF

    Untitled

    Abstract: No abstract text available
    Text: date 07/01/2013 page 1 of 5 SERIES: VQA │ DESCRIPTION: DC-DC CONVERTER FEATURES • • • • • • designed for IGBT driver modules small footprint 3,000 Vac isolation short circuit protection temperature range -40~85°C efficiency up to 80% MODEL


    Original
    VQA-S9-D15-SIP VQA-S12-D15-SIP VQA-S15-D15-SIP VQA-S15-D17-SIP VQA-S24-D15-SIP PDF

    S9S12

    Abstract: No abstract text available
    Text: date 02/05/2013 page 1 of 5 SERIES: VQA │ DESCRIPTION: DC-DC CONVERTER FEATURES • • • • • • designed for IGBT driver modules small footprint 3,000 Vac isolation short circuit protection temperature range -40~85°C efficiency up to 80% MODEL


    Original
    VQA-S9-D15-SIP VQA-S12-D15-SIP VQA-S15-D15-SIP VQA-S15-D17-SIP VQA-S24-D15-SIP S9S12 PDF

    DZ800S17K3

    Abstract: FF800R17KE3
    Text: Technische Information / technical information DZ800S17K3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Emitter Controlled³ Diode 62mm C-series module with Emitter Controlled³ diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data


    Original
    DZ800S17K3 DZ800S17K3 FF800R17KE3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information DD600S17K3_B2 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ $ 1 # % 7 28 6( 1 $ ,-. / ,


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    DD600S17K3 PDF

    VQA 23

    Abstract: Funkamateur VQA 13 ESBR5501 vqa 33 FUNKAMATEUR - Bauelementeinformation VQA13 esbg5501 CQX51 TLUY5400
    Text: FUNKAMATEUR - Bauelementeinformation Vergleichslisten Optoelektronik Uchtemitterdioden Lichtemitterdioden, Durchmesser 5 mm o Farbe WF rot rot rot grün gelb rot grün gelb orange rot grün VQA VQA VOA VQA VQA VQA VQA VQA VQA VQA VQA 10 13 13-1 23 33 16 26


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    LS5160 CQX51 HLMP-33 TLS1541) SAR55114) TLR116A3) TLUR5400 CQY24 HLMP-3000 TLR114A3) VQA 23 Funkamateur VQA 13 ESBR5501 vqa 33 FUNKAMATEUR - Bauelementeinformation VQA13 esbg5501 TLUY5400 PDF

    A277D

    Abstract: applikation heft A225D "halbleiterwerk frankfurt" VQA 13 VQA13 information applikation A302D Transistoren DDR halbleiterwerk
    Text: J motkr^elel-ctsnonH-c Information Information - Applikation v : 1 . •' LEDAnsteuerungsscbaltkreis A 277 D * Eigenschaften und Einsatzmöcjlichkeiten - M ikroelektronik H eft 10 v e b h albleiterw erk fr a n k fu r t/ o d e r laitbetrieb im veb Kombinat mikraelektronik


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    PDF

    5252 F 1006

    Abstract: 40r6 NF 846 RFT service-mitteilungen "service-mitteilungen" vqe 21 RFT Servicemitteilungen servicemitteilungen service-mitteilungen 5252 f 1201
    Text: SERVICE-MITTEILUNGEN 12-15 Iradio - television VEB RFT INDUSTRIEVERTRIEB RUNDFUNK UND F E R N S E H E N Ausgabe Seite S e p t. 88 1- 3 16 M itte ilu n g aus dem VEB S te r n -B a d io B e r l in , K u n d en d ien st Laufw erk MU 3oo S-DB - S e r v ic e v a r ia n te n


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    K/10-- K/10-10 5252 F 1006 40r6 NF 846 RFT service-mitteilungen "service-mitteilungen" vqe 21 RFT Servicemitteilungen servicemitteilungen service-mitteilungen 5252 f 1201 PDF

    Diode KD 514

    Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
    Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381


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    PDF

    UEI 20 SP 010

    Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
    Text: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"


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    64-KBit-Sehreib--Iese-Speicher 086/11/B9 UEI 20 SP 010 Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D PDF

    max4440

    Abstract: No abstract text available
    Text: APT10086BVFR A dvanced w Tæ p o w e r Te c h n o l o g y iooov i3a 0.8600 POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    APT10086BVFR O-247 APT10086BVR 100V16 max4440 PDF

    LA6358

    Abstract: LA6358NM 777T
    Text: Ordering number: EN 3192 Monolithic Linear IC LA6358NM High-Performance Dual Operational Amplifier Overview The LA6358NM is an IC integrating two high-performance operational amplifiers in a single package. This operational amplifier contains an internal phase compensator and is designed to operate from a


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    LA6358NM LA6358NM LA6358 777T PDF

    crt bw diagram

    Abstract: CR2424 CR2425 SC05 VQA 23
    Text: DISCRETE SEMICONDUCTORS [M m Ü IK IE E T CR2424; CR2425 Video driver hybrid amplifiers Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC05 1995 Apr 04 Philips Semiconductors PH ILIPS 713,Dfl2fc. 0 0 T 5 1 7 t. S1G


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    CR2424; CR2425 00T517t. OT115L CR2424) 7110fl2b crt bw diagram CR2424 CR2425 SC05 VQA 23 PDF

    Untitled

    Abstract: No abstract text available
    Text: A dvanced APT8065BVFR pow er Te c h n o lo g y 800V POWER MOS V 13A 0.650Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    APT8065BVFR O-247 APT8065BVFR PDF

    LF33

    Abstract: IRT 1250
    Text: IRFR/Ü210A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ H Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 n A Max. @ VDS= 200V Low Rdsjon) ■ 1.250 (Typ.)


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    IRFR/U21GA IRFR/U210A LF33 IRT 1250 PDF

    Untitled

    Abstract: No abstract text available
    Text: SSF25N40A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ VDS= 400V


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    SSF25N40A PDF

    VQA 13

    Abstract: IRF634A
    Text: ERF634A Advanced Power MOSFET FEATURES b vdss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 m A Max. @ VDS= 250V ■ - 250 V


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    ERF634A IRF634A VQA 13 IRF634A PDF

    BUZ21

    Abstract: No abstract text available
    Text: «ç»FVF SIPMOS Power MOS Transìstor BUZ 21 L VDS = 100 V /D = 21 A ^DS on = 0.085 Q • • • • • N channel Enhancement mode Logic level Avalanche-proof Package: TO -220A B ') Type O rdering code BUZ 21 L C67078-S1338-A2 Maximum Ratings Parameter


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    -220A C67078-S1338-A2 SIL00211 SIL00213 SIL00214 BUZ21 PDF

    rema andante

    Abstract: GER-A service-mitteilungen stern R 160 REMA VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN Stassfurt rema adagio 830 adagio rema adagio
    Text: SERVICE-MITTEILUNGEN VEB IN DUSTRIEVERTRIEB RUNOFUNK UND FERNSEH EN r a d io -television CHROMAT 1060 Der VEB Fernsehgerätewerke Staßfurt wird, im Verlauf des 2. Halbjah­ res 1976 die ersten Farbfernsehgeräte vom neuen Typ "CHROMAT 1060" an den Handel ausliefera. Der "CHROMAT 1060" gilt offiziell als


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    III/18/379 rema andante GER-A service-mitteilungen stern R 160 REMA VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN Stassfurt rema adagio 830 adagio rema adagio PDF

    754C

    Abstract: L3036 2082c K/EL2082J
    Text: EL2082/EL2082C P ta n frf iHIGHl PtfffpAMANfiE l H iAilAlOG i pINTEGRATE W QftClJITS P • Current-Mode Multiplier F ea tu r es G en eral D esc rip tio n • Flexible inputs and outputs, all ground referred • ISO M Hz large and small-signal bandwidth • 46 dB of calibrated gain control


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    EL2082/EL2082C EL2082 EL3037 EL3038 754C L3036 2082c K/EL2082J PDF

    TDB1080

    Abstract: rms audio amplifier circuit diagram TDB1080T Limiting Amplifier fm detector phase detector 500 khz 5PQA audio signal detector circuit 100 audio amplifier circuit diagram Long-Tailed
    Text: TDB1080 TDB1080T I.F. LIMITING AMPLIFIER, FM DETECTOR AND AUDIO AMPLIFIER G E N E R A L DESCRIPTIO N The TDB1080 is a bipolar integrated circuit comprising a limiting amplifier, a balanced FM detector and a class-B audio amplifier. It is intended for frequencies up to 500 kHz with either narrow-band or


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    TDB1080 TDB1080T TDB1080 115i2 TDB1080. rms audio amplifier circuit diagram TDB1080T Limiting Amplifier fm detector phase detector 500 khz 5PQA audio signal detector circuit 100 audio amplifier circuit diagram Long-Tailed PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic Cell Based CB8 0.8|im CMOS Cell-Based Designs MATRA MHS Description MHS calibrated COMPASS Cell Based tools and libraries • the density and the speed are close to those of a full on CMOS 0.8 xm, bringing an additional option to its custom, while keeping a design cycle close to the


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    VSC370 VSC350 D00S1B7 PDF

    marking BSs sot23

    Abstract: BSS-229 s 100 139 004 BSS229 marking BSs sot23 siemens
    Text: SIEMENS SIPMOS Small-Signal Transistors VDS lD ^ D S o n • • • BSS 139 BSS 229 = 250 V = 0 .0 4 /0 .0 7 A = 100 Q N channel Depletion mode Packages: SOT-23, T O -9 2 1) Type Marking Ordering code fo r version in bulk Ordering code Ordering code


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    OT-23, Q62702-S575 Q62702-S567 Q62702-S567-P1 Q62702-S612 Q62702-S600 Q62702-S600-P1 marking BSs sot23 BSS-229 s 100 139 004 BSS229 marking BSs sot23 siemens PDF

    Untitled

    Abstract: No abstract text available
    Text: MSD INC. ENGINEERING DATA SHEET RELAYTYPE': HZA,-2iO'D^ô COMPUTERPARTNo.:922f 5 7 TEST PROCEDURE MSDP- 791 CUSTOMER/SPECIFICATION: CATAIOÔ- XTcM REV K /^ TEST REQUIREMENTS COIL CpRggviP A OPERATETIME:15mSM&* RELEASETIME:50fttS MAX CONTACT MAKEBOUNCE: \ mS MA*


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    IIS4006 PDF