IRC 265
Abstract: DP63950 DP83950BVQB DP83950BVQB-MPC MNDP83950B-VQB T101 T102 T103 T104 T105
Text: MICROCIRCUIT DATA SHEET Original Creation Date: 10/24/94 Last Update Date: 02/24/99 Last Major Revision Date: 10/24/94 MNDP83950B-VQB REV 0B0 REPEATER INTERFACE CONTROLLER General Description The "RIC" may be used to implement an IEEE 802.3 multiport repeater unit including the
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MNDP83950B-VQB
VUL160ARB
28x28x3
160LD
M0003282
MNDP83950B-VQB,
IRC 265
DP63950
DP83950BVQB
DP83950BVQB-MPC
T101
T102
T103
T104
T105
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wiring VDG 13 relay
Abstract: Battery Managements wiring VDG 14 relay CI 3060 elsys 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Text: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738
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MC33121/D
MC33121
MC33121
refere20
MC33121/D*
wiring VDG 13 relay
Battery Managements
wiring VDG 14 relay
CI 3060 elsys
1N4002
1N6282
1N6287
MC33121FN
MC33121P
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wiring VDG 13 relay
Abstract: MC33120 TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN
Text: Order this data sheet by MC33120/D MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface
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MC33120/D
MC33120
MC33120
wiring VDG 13 relay
TIP 22 transistor
MC33120P
Battery Managements
20k301
darlington circuit tip 42
HB205
1N6290A
MC33120FN
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wiring VDG 13 relay
Abstract: Battery Managements long range gold detector circuit diagram PIN CONFIGURATION IC RT 3060 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Text: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738
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MC33121/D
MC33121
MC33121
refere12
wiring VDG 13 relay
Battery Managements
long range gold detector circuit diagram
PIN CONFIGURATION IC RT 3060
1N4002
1N6282
1N6287
MC33121FN
MC33121P
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TAG 600
Abstract: LINDNER fuses LR 103020 LEVEL 3 SIBA FUSE FF IEC 947-7-1 terminal block 400v gw 4007 95324 160990 G-FUSE 24v DC Weidmuller BLZ 5.08
Text: W-series 2 W-series W-series Weidmüller is the world wide market leader in terminal blocks. W-series constantly sets new standards. The systematics of W-series are on continuous bases improved: l same dimensions in a range from 2.5 – 35 mm2, features a.o. disconnect
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MC34120
Abstract: No abstract text available
Text: MOTOROLA MC34120 1 1 Product Preview +–x751 D-02 I I I / 1 NPJO08* REV F MOTOROM 2 3 MOTOROM MOTOROW 4 20 Vcc Vdd ~ ~ EP ST1 . BP Vdg 0.011 J + 5VOLTS 12 L =/ST2 13 ST1 14 4 k 3 2 15 ~ + 5VOLTS k PD1/sT2 “ A v [0 a 11 a RRX 30. 6K q~~~fi RRF 6.2K RRO
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MC34120
NPJO08*
MP56717
RRF/100
MC34120J/D
MC34120
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HUB1200-S
Abstract: HUB1800-S
Text: !"#$% Nât !" 123333333333333333333333333333333 !"#$% !"#$%&' *+,-./01 NIMMMt !"#$%&'()*+,!"#$%&'()*+,-./012324 !"#$%&'()*%+,-%&./012 !"#$%&'()*+,-./01-234 !"#$%&'()"*+,-+./"01' !"#$%& '()*+,-+./0123 !"#$%&'()*+,-./0!$%1E !"#$%&'()*+,-./01"234 F !"#$%&'()*+"#!,-./0*1
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Untitled
Abstract: No abstract text available
Text: Product catalogue | Terminals | Screwing technology | W-series modular terminals | Motor connection terminals General ordering data Order No. Part designation Version EAN Qty. Product notes Note, technical data 1615270000 MAK 2.5 Feed-through terminal, 2.5 mm², Screw
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EC000897
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EC000897
Abstract: No abstract text available
Text: Product catalogue | Terminals | Screwing technology | W-series modular terminals | Motor connection terminals General ordering data Order No. Part designation Version EAN Qty. Product notes Note, technical data 7917030000 MAK 2.5 DB Feed-through terminal, 2.5 mm², Screw
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EC000897
EC000897
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VQB 28 E
Abstract: vqb 27 VQB28 Siebensegmentanzeige VQb 28 VQB 18 VQB16 vqb 27 f VQB27 VQB18
Text: FUNKAMATEUR-Bauelementeinformation Einstellige Lichtschachtbauelemente rot- bzw. grünstrahlend, Ziffernhöhe 19,6 mm, mit Diodenchips auf GaA/As- bzw. GaP-Basis VQB16/17/18 VQB 26/27/28 T G L 55111 Hersteller: V E B W erk für Fernsehelektronik Berlin Kurzcharakteristik
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VQB16/17/18
VQB 28 E
vqb 27
VQB28
Siebensegmentanzeige
VQb 28
VQB 18
VQB16
vqb 27 f
VQB27
VQB18
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2N6715
Abstract: 2N6714 2N6726 92GU01
Text: 92GU01.01A 2N6714.15 NPN POWER TRANSISTORS 30-40 VOLTS 2 AMP, 1.2 WATTS COMPLEMENTARY TO THE 2N6726, 27/92GU51, 51A SERIES Applications: • Class “B ” audio outputs/drivers • General purpose switching and lamp drive in industrial and automotive circuits.
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2N6726,
27/92GU51,
92GU01
2N6714
O-237
2N6714
2N6715
2N6726
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564 sot363
Abstract: No abstract text available
Text: SIEMENS BCR 22PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=22k£2, R2=22k£i) Tape loading orientation
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Q62702-C2375
OT-363
564 sot363
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SD 214DE siliconix
Abstract: SILICONIX SD21
Text: Tem ic SD210DE/214DE Semiconductors N-Channel Lateral DMOS FETs Product Summary P a rt N um ber V BR DS M in (V) V GS (th )M a x (V ) rDS(on) M a x (Q ) Crss M a x (p F ) to N M a x (ns) SD210DE 30 1.5 45 @ VGS = 10 V 0.5 2 SD214DE 20 1.5 4 5 @ V Cs = 10V
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SD210DE/214DE
SD210DE
SD214DE
S-51850--Rev.
14-Apr-97
D224T2
SD 214DE siliconix
SILICONIX SD21
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transistor buz 10
Abstract: wo3 TRANSISTOR KDS -5a DIODE BUZ 537 KDS 38 BUZ 271 BUZ271 C67078-S1453-A2 DIODE BUZ BUZ-271
Text: SIEMENS £2^ - ^ 3 SIPMOS Power Transistor BUZ 271 • P channel • Enhancement mode • Avalanche rated Type Vds Io •^DS on Package 1> Ordering Code BUZ 271 -5 0 V -2 2 A 0.15 Q. TO-220 AB C67078-S1453-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc 38 2 6 *C
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O-220
C67078-S1453-A2
SIL03522
SIL03523
transistor buz 10
wo3 TRANSISTOR
KDS -5a
DIODE BUZ 537
KDS 38
BUZ 271
BUZ271
C67078-S1453-A2
DIODE BUZ
BUZ-271
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vqb 71
Abstract: 074I sem 304 SD50G1
Text: TELEDYNE COMPONENTS awbüa HflE J> aoot.444 t. SD5000, SD5001, SD5002 SEM ICO N D U CTO R T 7 e5 7 ~ / / N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sort«! Chip* fn W«fffe Pack SD5000CHP SD50CHCHP 1$-PfnCsram!c Dual In-Line Package
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SD5000CHP
SD5000J
SD500QN
SD5000,
SD5001,
SD5002
SD50CHCHP
SD5001J
SD5002CH«
SD5Q02M
vqb 71
074I
sem 304
SD50G1
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motorola TE 901
Abstract: MK1V135 2N390S MC14404
Text: bbE D MOTOROLA I b3b?s s3 ooaaa'ifl Mai « d o t s MOTOROLA SC TELECOM SEMICONDUCTOR TECHNICAL DATA MC3419-1L SUBSCRIBER LOOP INTERFACE CIRCUIT . . . designed as the heart o f a c ircu it to p rovide B O R SH Tfunctions fo r telephone service in Central O ffice, PABX, and S ubscriber Car
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MC3419-1L
mF/20V
aiF/40
iF/60
MJE271
MJE270
MPSA56
2N3905
1N4007
motorola TE 901
MK1V135
2N390S
MC14404
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D147D
Abstract: C520D vqb 71 VQB71 D347D d348d VQE23 D346D Halbleiterbauelemente DDR VQE24
Text: electronica ] Nullpunktabgleich [T j ~8~| Nullpunktabgleich | Eingang L [ u Masse l i Eingang H T I Betriebsarten - Umschaltung T ] LSD ( letztes Digit) integrations-C f/2 Endwertabgleich \l3 MSD (höchstwertiges Digit) Betriebsspannung Us Z I BCD-Ausgang OC
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C520D
D147D
C520D
vqb 71
VQB71
D347D
d348d
VQE23
D346D
Halbleiterbauelemente DDR
VQE24
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MRF5711LT1
Abstract: MRF571 MBR571 MPS571 E4E SOT23 vqb 71 LG 631 IC Motorola TE 2198 MBR571LT1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MPS571 MRF571 MRF5711LT1 NPN Silicon High-Frequency TVansistors Designed for low noise, wide dynamic range fron t-e nd amplifiers and low-noise VCO’s. Available in a surface-mountable plastic package, as well as
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O-226AA
MRF5711LT1,
MRF571)
A/500
MMBR571LT1)
MRF5711LT1)
MMBR571LT1
MPS571
MRF571
MRF5711LT1
MBR571
E4E SOT23
vqb 71
LG 631 IC
Motorola TE 2198
MBR571LT1
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TP5510WM
Abstract: fsd 200 vf 10
Text: February 1997 TP5510 Full Duplex Analog Front End AFE for Consumer Applications General Description Features The TP5510 consists of a jx-law monolithic AFE device uti lizing the A /D and D /A conversion architecture shown in Figure 1, and a serial data interface. The device is fabricat
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TP5510
TP5510WM
fsd 200 vf 10
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Untitled
Abstract: No abstract text available
Text: t e l e d y n e eòe c o m p o n e n t s m D 000^ 44? a i i T t a a 1 SD5 1 0 0 , SD5 1 0 1 SEMICONDUCTOR _ ~7Z & 7 - / / ' N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sorted Chips In Waffle Pack SD5100CHP
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14-Pin
SD5100CHP
SD5100N
SD5101CHP
SD5101N
Drivers--SD5100
Drivers--SD5101
SD5100
SO-16)
OT-143)
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2SD1664
Abstract: marking 2sd1664
Text: 2SD1664 Transistor, NPN Features Dimensions Units : mm 2SD1664 (MPT3) 4j .e5 -+0 0 .'2 1 u> i.e ± o . i R I r-fl rm : i ! ! ! ! ! in csi Tl (1) J Œ I î M 1.0 ±0.3 available in MPT3 (MPT, SC-62) package package marking: 2SD1664; DA*, where ★ is hFE code
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2SD1664
SC-62)
2SD1664;
500mA/50
2SB1132
2SD1664
marking 2sd1664
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS S&1EET BFQ236; BFQ236A NPN video transistors Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC05 Philips Semiconductors 1997 Oct 02 PH ILIPS PHILIPS Philips Semiconductors Product specification
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BFQ236;
BFQ236A
OT223
BFQ256
BFQ256A.
SCA55
127027/00/02/pp8
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2SJ106
Abstract: No abstract text available
Text: SILICON P CHANNEL JUNCTION TYPE 2SJ106 AUDIO FREQUENCY AMPLIFIER APPLICATIONS. Unit in mm ANALOG SWITCH APPLICATIONS. + CL5 CONSTANT CURRENT APPLICATIONS. IMPEDANCE CONVERTER APPLICATIONS. . High Breakdown Voltage : Vg d S= 50V Min. . High Input Impedance
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2SJ106
SC-59
2SJ106
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digital transistor array
Abstract: marking 702 sot363
Text: SIEMENS BCR 169S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistor (R1=4.7kQ) Cl U 12 FI FI FI U lii ÜJ Type Marking Ordering Code Pin Configuration
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OT-363
digital transistor array
marking 702 sot363
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