wiring VDG 13 relay
Abstract: Battery Managements wiring VDG 14 relay CI 3060 elsys 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Text: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738
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MC33121/D
MC33121
MC33121
refere20
MC33121/D*
wiring VDG 13 relay
Battery Managements
wiring VDG 14 relay
CI 3060 elsys
1N4002
1N6282
1N6287
MC33121FN
MC33121P
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wiring VDG 13 relay
Abstract: MC33120 TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN
Text: Order this data sheet by MC33120/D MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface
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MC33120/D
MC33120
MC33120
wiring VDG 13 relay
TIP 22 transistor
MC33120P
Battery Managements
20k301
darlington circuit tip 42
HB205
1N6290A
MC33120FN
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wiring VDG 13 relay
Abstract: Battery Managements long range gold detector circuit diagram PIN CONFIGURATION IC RT 3060 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Text: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738
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MC33121/D
MC33121
MC33121
refere12
wiring VDG 13 relay
Battery Managements
long range gold detector circuit diagram
PIN CONFIGURATION IC RT 3060
1N4002
1N6282
1N6287
MC33121FN
MC33121P
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MRF393
Abstract: No abstract text available
Text: ioducti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon Push-Pull RF Power TVansistor MRF393 . . . designed primarily for wideband large-signal output and driver amplifier
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MRF393
MRF393
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TAG 600
Abstract: LINDNER fuses LR 103020 LEVEL 3 SIBA FUSE FF IEC 947-7-1 terminal block 400v gw 4007 95324 160990 G-FUSE 24v DC Weidmuller BLZ 5.08
Text: W-series 2 W-series W-series Weidmüller is the world wide market leader in terminal blocks. W-series constantly sets new standards. The systematics of W-series are on continuous bases improved: l same dimensions in a range from 2.5 – 35 mm2, features a.o. disconnect
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Untitled
Abstract: No abstract text available
Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 BUZ 355 N channel Enhancement mode Avalanche-rated Pint Type VDS ID ^DS(on) Package BUZ 355 800V 6A 1.50 TO-218AA Pin 2 Pin 3 Maximum Ratings Parameter Symbol Continuous drain current
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O-218AA
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MPS-U95
Abstract: PSU45
Text: ^Products., Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MPS-U95 (SILICON) PNP SILICON DARLINGTON TRANSISTOR PNP SILICON DARLINGTON AMPLIFIER TRANSISTOR . . . designed for amplifier and driver applications.
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MPS-U95
PS-U45
MPS-U95
PSU45
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2sc668
Abstract: LT 5226 2SC668SP
Text: Is H S Ii ft illit(* ìS « a g|5 S f « » g * a ï * : â B T * œ i SANYO » « # # 370 - 05 so ^ 3 3 0 -5226 S1-668SP a t î 0276 -63- 21 11 W J È M t e 2/U3V N P N E I Ö ? F M RF, □ 2SC668SP U- + 25°C 3 1 / ^ • ^ — x î JHE □ L/ ? $ . J i * oy $ ^ J±
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2SC668SP
2sc668
LT 5226
2SC668SP
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP 52E D 7TT7Q7b □00737t FC109 b T-37-/3 P N P Epitaxial Planar S ilico n C o m p o site Transistor 2067 Switching Applications with Bias Resistances R1=22ki2, R2=22kn F eatures •On-chip bias resistors (Rj = 22kQ,R2= 22ki2) • Composite type with 2 transistors contained in the CP package currently in use, improving the
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00737t
FC109
T-37-/3
22ki2,
22ki2)
FC109
2SA1342,
4139MO
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Untitled
Abstract: No abstract text available
Text: REVISIONS ALL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC TECHNOLOGY. multicomp DCP # REV DOC. NO. SPC— F005 DESCRIPTION 1885 RELEASED DRAWN DATE BYF 02 0 5/0 6
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2N3501
35C0704
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diode AE 84A
Abstract: BOW84C TRANSISTOR Bdw84d BDW 65 C BOW84
Text: BDW84, BDW84A, BDW84B, BOW84C, BDW84D PNP SILICON POWER DARLINGTONS Copyright 1987, Power Innovations Limited, UK • A U G U ST 1978 • R E V IS E D M A R C H 1997 Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D • 150 W at 25°C Case Temperature
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BDW84,
BDW84A,
BDW84B,
BOW84C,
BDW84D
BDW83,
BDW83A,
BDW83B,
BDW83C
BDW83D
diode AE 84A
BOW84C
TRANSISTOR Bdw84d
BDW 65 C
BOW84
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motorola TE 901
Abstract: MK1V135 2N390S MC14404
Text: bbE D MOTOROLA I b3b?s s3 ooaaa'ifl Mai « d o t s MOTOROLA SC TELECOM SEMICONDUCTOR TECHNICAL DATA MC3419-1L SUBSCRIBER LOOP INTERFACE CIRCUIT . . . designed as the heart o f a c ircu it to p rovide B O R SH Tfunctions fo r telephone service in Central O ffice, PABX, and S ubscriber Car
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MC3419-1L
mF/20V
aiF/40
iF/60
MJE271
MJE270
MPSA56
2N3905
1N4007
motorola TE 901
MK1V135
2N390S
MC14404
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D147D
Abstract: C520D vqb 71 VQB71 D347D d348d VQE23 D346D Halbleiterbauelemente DDR VQE24
Text: electronica ] Nullpunktabgleich [T j ~8~| Nullpunktabgleich | Eingang L [ u Masse l i Eingang H T I Betriebsarten - Umschaltung T ] LSD ( letztes Digit) integrations-C f/2 Endwertabgleich \l3 MSD (höchstwertiges Digit) Betriebsspannung Us Z I BCD-Ausgang OC
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C520D
D147D
C520D
vqb 71
VQB71
D347D
d348d
VQE23
D346D
Halbleiterbauelemente DDR
VQE24
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MRF5711LT1
Abstract: MRF571 MBR571 MPS571 E4E SOT23 vqb 71 LG 631 IC Motorola TE 2198 MBR571LT1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MPS571 MRF571 MRF5711LT1 NPN Silicon High-Frequency TVansistors Designed for low noise, wide dynamic range fron t-e nd amplifiers and low-noise VCO’s. Available in a surface-mountable plastic package, as well as
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O-226AA
MRF5711LT1,
MRF571)
A/500
MMBR571LT1)
MRF5711LT1)
MMBR571LT1
MPS571
MRF571
MRF5711LT1
MBR571
E4E SOT23
vqb 71
LG 631 IC
Motorola TE 2198
MBR571LT1
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS S&1EET BFQ236; BFQ236A NPN video transistors Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC05 Philips Semiconductors 1997 Oct 02 PH ILIPS PHILIPS Philips Semiconductors Product specification
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BFQ236;
BFQ236A
OT223
BFQ256
BFQ256A.
SCA55
127027/00/02/pp8
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IC AL 6001
Abstract: SIDAC K 282 IC AL 6001 audio ic K1V135 MC3419 20 pin audio IC AL 6001 je270
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC3419-1L TELEPHONE LINE FEED CIRCUIT . . . d esigned as th e hea rt o f a c irc u it to p ro vid e BORSHT fu n c tio n s fo r te le p h o n e service in C entral O ffice, PABX, and S u b scrib e r Car rier e q u ip m e n t. Th is c irc u it p ro vid e s dc p o w e r fo r th e te lep h o ne
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MC3419-1L
iF/60
MOC3030
MJE271
MJE270
MPSA56
2N3905
1N4007
1N4007
IC AL 6001
SIDAC K 282
IC AL 6001 audio ic
K1V135
MC3419
20 pin audio IC AL 6001
je270
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BDL31
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification NPN medium power transistor FEATURES BDL31 PINNING • High current max. 5 A PIN DESCRIPTION • Low voltage (max. 10 V) 1 • Low collector-emitter saturation voltage ensures reduced power dissipation. 2
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BDL31
OT223
BDL32.
OT223)
BDL31
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2SC1195
Abstract: AC73 opto 501
Text: TOSHIBA -CDISCRETE/0PT03- Tb DE I TDTTaSD 0DD74MH T 5 òC 9097250 TOSHIBA <D ISC RET E/ OP TO 07442 2SC1195 S IL IC O N NPN T R IP L E D IF F U SE D TYPE PCT PROCESS) REGULATOR APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES: • High Voltage : VCE0=200V
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z-21a1a
300xrÃ
100X100
l1illltllllllt3lt11l(
2SC1195
AC73
opto 501
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Untitled
Abstract: No abstract text available
Text: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr o% #f 1 I Ic ^88888 l D a ta S h e e t No. 2N 3501 $ id L SEMICONDUCTORS Type 2N3501 G eneric Part Num ber: 2N3500 G eom etry 5620 Polarity NPN Qual Level: J A N -J A N S
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2N3501
2N3500
MIL-PRF-19500/366
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transistor tic 2250
Abstract: tic 2250
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRFQ17 The RF Line DIE S O U R C E SA M E AS BFQ17 IMPN Silicon High Frequency Transistor lc = 300 m A S U R F A C E M OUNT HIGH FR EQ U EN C Y TR AN SISTO R NPN SILICON . . . designed for amplifier, oscillator or frequency multiplier applications in industrial
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MRFQ17
BFQ17
transistor tic 2250
tic 2250
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2SC1195
Abstract: AC73 opto 501 501 opto C9060
Text: TOSHIBA -CDISCRETE/0PT03- Tb DE I TDTTaSD 0DD74MH T 5 òC 9097250 TOSHIBA <D ISC RET E/ OP TO 07442 2SC1195 S IL IC O N NPN T R IP L E D IF F U SE D TYPE PCT PROCESS) REGULATOR APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES: • High Voltage : VCE0=200V
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z-21a1a
300xn0nx2mm
100X100
l1illlCllllllt3lt11l(
2SC1195
AC73
opto 501
501 opto
C9060
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Pulse Pow er Transistor . . . designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and M ode-S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak
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MRF10500
376B--Z9
MRF10150
MRF10150
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MDA220
Abstract: MOC3030 application notes VQB 28 E MC14404 2N6558 MK1V135 mc145414 2N6558 MOTOROLA mc3417 power supply ctx monitor 762
Text: MOTOROL A SC {TELECOM}- 01 D e | L3b75S3 00flQM3t. 1 I -r~ v s '" // - ¡ y MC3419-1L TELEPHONE LINE-FEED CIRCUIT . . . designed as the heart of a circuit to provide BORSHT functions for telephone service in Central Office, PABX, and Subscriber Car rier equipment. This circuit provides dc power for the telephone
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3b75S3
MC3419
moc3030
mje271
mje270
mpsa56
2n3905
1n4007
MDA220
MOC3030 application notes
VQB 28 E
MC14404
2N6558
MK1V135
mc145414
2N6558 MOTOROLA
mc3417
power supply ctx monitor 762
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E2512
Abstract: vgb 0503 VGB0504MY7 VBO 24 VGB0492MY7 80380 b1912 E2506 vgb 0491 VGB0493MY7
Text: I X Y S CORP If lE D • 4bflb22b 0QQ07bñ Rectifier Bridges, 1~ i 5 ■ 'T - r s - o c i Typical applications - DC-Power supplies - DC-Supply for electronics and power control systems - Avalanche Types: magnet valves, magnet brakes B 1906 LF B 1912 LF LF
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4bflb22b
0QQ07bñ
E2512
VB010
vgb 0503
VGB0504MY7
VBO 24
VGB0492MY7
80380
b1912
E2506
vgb 0491
VGB0493MY7
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