12n120
Abstract: TO247AE
Text: MOTOROLA Order this document by MGW12N 120/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet Insulated G ate Bipolar TVansistor MGW 12N120 N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage
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MGW12N
120/D
MGW12N120/D
12n120
TO247AE
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Untitled
Abstract: No abstract text available
Text: Advanced Data High Voltage IGBT with Diode IXDH 20N120AU1 VCES = 1200 V iC25 = 30 A V CE sat typ = 2 5 VV SCSOA Capability Symbol Test Conditions V CES T j = 25°C to 150°C 1200 V Vco„ Tj = 25°C to 150°C; RaE = 1 MQ 1200 V v SES VGEM Continuous ±20
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20N120AU1
O-247
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diode lt 238
Abstract: 21N60ED
Text: MOTOROLA Order this document by MGW21 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 21N 60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged with a soft recovery u ltra -fa s t rectifier and uses an advanced
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MGW21
N60ED/D
MGW21N60ED/D
diode lt 238
21N60ED
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet PD-9.1187 ^R ectifier IRGNIN050K06 "CHOPPER" IGBT INT-A-PAK Low conduction loss IGBT High Side Switch VCE = 600V - o 3 «nr 5 ° - • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses
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IRGNIN050K06
C-996
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Untitled
Abstract: No abstract text available
Text: International lÏMtlRectifier Provisional Data Sheet PD-9.1191 IRGTIN050K06 Low conduction loss IGBT "HALF-BRIDGE" IGBT INT-A-PAK Half-Bridge n — o3 V CE = 6 0 0 V lc = 5 0 A V ce O N < 2 .7 V • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail"
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IRGTIN050K06
Outllne11
C-1004
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C818
Abstract: rq20 C814 c815
Text: PD-9.953B bitemational lüIR ectifier IRGTI050U06 "HALF-BRIDGE" IGBT INT-A-PAK Ultra-fast Speed IGBT •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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25KHz
100KHz
IRGTI050U06
C-817
C-818
C818
rq20
C814
c815
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IRGKI050U06
Abstract: No abstract text available
Text: I n t e r n a t io n a l S P M 96,B Rectifier IRGKI050U06 "CHOPPER" IGBTINT-A-PAK Ultra-fast Speed IGBT •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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IRGKI050U06
25KHz
100KHz
C-770
IRGKI050U06
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f j = 45 GHz
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Q62702-F1794
OT-343
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Untitled
Abstract: No abstract text available
Text: PD-9.969B kitemational [^ R ectifier IRGNI050U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT High Side Switch - • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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25KHz
100KHz
IRGNI050U06
C-793
C-794
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Untitled
Abstract: No abstract text available
Text: PD - 9.1583A International I R Rectifier IR G 4 P C 5 0 K PR ELIM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tSc =1 Ops, @ 360V VCE Start , Tj = 125°C,
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485S4S2
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c214 diode
Abstract: IRGTI065F06 957B C-218 D-16 bsk 45
Text: International S Rectifier PD-9.957B IRGTI065F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT • Rugged Design »Simple gate-drive .Fast operation up to 10KHz hard switching, or 50KHz resonant »Switching-Loss Rating includes all "tail“ losses Vœ = 600V
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IRGTI065F06
10KHz
50KHz
applicatiRGTI065F06
100nH
C-218
c214 diode
IRGTI065F06
957B
D-16
bsk 45
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Marking ANs
Abstract: Transistor C 5198 b 514 transistor BFP450
Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability
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Q62702-F1590
OT-343
Marking ANs
Transistor C 5198
b 514 transistor
BFP450
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Untitled
Abstract: No abstract text available
Text: I . I P D -5038 International I@R Rectifier CPV 363M 4F preliminary IGBT SIP MODULE Features • • • • Fast IGBT Fully isolated printed circuit board mount package Switching-loss rating includes all "tail” losses HEXFRED soft ultrafast diodes Optimized for medium operating 1 to 10 kHz
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360Vdc,
S5452
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RTO BH
Abstract: No abstract text available
Text: PD - 9 .1 6 2 0 International I R Rectifier PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR IRG4BC20K-S Short Circuit Rated _ UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10ps, @ 3 60 V VCE start , T j = 125°C,
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IRG4BC20K-S
RTO BH
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G4PC40
Abstract: g4pc40f G4PC4 G4PC
Text: International IG R Rectifier PD - 9.1463A IRG4PC40F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4PC40F
O-247AC
G4pc40f,
G4PC40
g4pc40f
G4PC4
G4PC
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order thle document by MHPM7B12A120A/D SEMICONDUCTOR TECHNICAL DATA MHPM7B12A120A Hybrid Power Module Motorola Pwfttrod Dovtco Integrated Power Stage for 2.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output Inverter and brake transistor/diode In a single convenient package. The output
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MHPM7B12A120A/D
MHPM7B12A120A
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Untitled
Abstract: No abstract text available
Text: s e MIKROn Absolute Maximum Ratings Symbol C onditions V a lu e s Units 1 AC, 1 min. DIN 40 040 DIN tEC 68 T.1 1200 1200 400 / 300 800 / 600 ±20 2500 - 4 0 . . .+150 125 2 500 ?) Class F 55/150/56 Inverse Diode I f = - lc Tease — 25/80 ! C Tease 25/80 :!Cj tp —1 nts
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IRGPC46
Abstract: 10a 100v bipolar transistor mosfet induction heater S101 SS452 VQE 21 d
Text: INTERNATIONAL RECTIFIER 4055452 OOlOba? 2 2bE D Data Sheet No. PD-9.663 INSULATED GATE BIPOLAR TRANSISTOR T- 3 °[ -03 International g*»]Rectifier IRGPC46 BOOV, BO A FEATURES 600V, 60A, TO-247AC IGBT International Rectifier’s IRG series of Insulated Gate
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O-247AC
IRGPC46
10a 100v bipolar transistor
mosfet induction heater
S101
SS452
VQE 21 d
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Untitled
Abstract: No abstract text available
Text: mH/ERBC CM150DU-24H Powerex, Inc., 200 HIIHs Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 DlJ3Í IGBTMOD U-Series Module 150 Amperes/1200 Volts Tc Measured Description: r Ki r Ki r Ki Ís t L í — i t IT Powerex IGBTMOD™ Modules are designed for use in switching
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CM150DU-24H
Amperes/1200
-300A/
i4b21
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BF 914 transistor
Abstract: transistor R 405 transistor bf 405 transistor 1546 405 marking transistor s parameters noise transistor BF 914
Text: SIEMENS SIEGET 25 BFP 405 NPN Silicon RF Transistor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability
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Q62702-F1592
OT-343
BF 914 transistor
transistor R 405
transistor bf 405
transistor 1546
405 marking
transistor s parameters noise
transistor BF 914
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igbt 500V 50A
Abstract: No abstract text available
Text: bitemational [ÏÔR]Rectifier Provisional Data Sheet PD-9.1183 IRGKIN050K06 "CHOPPER“ IGBT INT-A-PAK Low conduction loss IGBT • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all “tail" losses •Short circuit rated Description
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IRGKIN050K06
C-988
igbt 500V 50A
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50n60
Abstract: 50N50B IXGH50N50B IXGH50N60B
Text: a ix Y S HiPerFAST IGBT v IXGH/IXGT 50N50B IXGH/IXGT 50N60B CES ; t C 25 500 V : 75 A 600 V : 75 A V C E sa t i t ii 2.3 V 80 ns 2.5 V 150 ns Preliminary data Symbol < > Maximum Ratings Test C onditions TO-247 AD (IXGH) 50N50 ¡ 50N60 VCES T, = 25QC to150cC
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50N50B
50N60B
50N50
50N60
O-247
to150cC
O-268
50n60
IXGH50N50B
IXGH50N60B
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79CU
Abstract: No abstract text available
Text: International ¡1 !Rectifier PD9969B IRGNI050U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V «Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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25KHz
100KHz
C-794
79CU
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IGBT 500V 50A
Abstract: "Power Diode" 500V 50A
Text: International m l Rectifier Provisional Data Sheet P D -9 .1155 IRGTIN050M06 Low conduction loss IG BT "HALF-BRIDGE" IG B T INT-A-PAK V Œ = 6 00V lc = 50A V ce O N < 2 ,O V • Rugged Design • Simple gate-drive • Switching-Loss Rating includes all "tail"
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IRGTIN050M06
C-444
IGBT 500V 50A
"Power Diode" 500V 50A
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