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Text: VR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type VR4J,TVR4N High-Speed Rectifier Applications fast recovery • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V • Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) • Reverse Recovery Time: trr = 20 s
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Abstract: No abstract text available
Text: VR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type VR4J, TVR4N High Speed Rectifier Applications fast recovery • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V • Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) • Reverse Recovery Time: trr = 20 µs
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Abstract: No abstract text available
Text: VR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type VR4J,TVR4N High Speed Rectifier Applications fast recovery • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V • Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) • Reverse Recovery Time: trr = 20 µs
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Abstract: No abstract text available
Text: VR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type VR4J,TVR4N High Speed Rectifier Applications fast recovery • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V · Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) · Reverse Recovery Time: trr = 20 µs
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TVR4N diode
Abstract: No abstract text available
Text: VR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type VR4J,TVR4N High-Speed Rectifier Applications fast recovery • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V • Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) • Reverse Recovery Time: trr = 20 s
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TVR4N diode
Abstract: TVR4J VR4J Toshiba rectifier TVR4N
Text: VR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type VR4J, TVR4N High Speed Rectifier Applications fast recovery • Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V • Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) • Reverse Recovery Time: trr = 20 µs
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000707EAA1
TVR4N diode
TVR4J
VR4J
Toshiba rectifier
TVR4N
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tvr4j
Abstract: 4j diode
Text: VR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type VR4J,TVR4N High-Speed Rectifier Applications fast recovery • Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V • Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) • Reverse Recovery Time: trr = 20 µs
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Abstract: No abstract text available
Text: VR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type VR4J,TVR4N High-Speed Rectifier Applications fast recovery • Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V • Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) • Reverse Recovery Time: trr = 20 µs
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VR4J
Abstract: TVR4J
Text: SILICON DIFFUSED TYPE FAST RECOVERY DIODE VR4J/N HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY • Repetitive Peak Reverse Voltage : Vr rm = 600, 1000V • Average Forward Current : IF(AV) =1.2A(Ta = 55°C) • Reverse Recovery Time : trr=20/^s U nit in mm
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30x30m
20x20m
VR4J
TVR4J
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Untitled
Abstract: No abstract text available
Text: TOSHIBA VR4J,TVR4N TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE VR4J, TVR4N Unit in mm HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY • • • Repetitive Peak Reverse Voltage : V r r m = 600, 1000 V Average Forward Current : If (AV) = 1.2 A (Ta = 55°C)
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Untitled
Abstract: No abstract text available
Text: T O SH IB A VR4J,TVR4N TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE VR4J, TVR4N HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY • • • Unit in mm Repetitive Peak Reverse Voltage : Vrrm = 600, 1000V Average Forward Current : Ip(AV) = 1-2A (Ta = 55°C)
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TVR4N X
Abstract: TVR4J TOSHIBA RECTIFIER
Text: T O SH IB A VR4JJVR4N TOSHIBA FAST RECOVERY DIODE TX/Rdl SILICON DIFFUSED TYPE TX/RAN HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY U nit in mm • Repetitive Peak Reverse Voltage : V r r ]V[ = 600, 1000V • Average Forward C urrent : I f (AV) —1-2A (Ta = 55°C)
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961001EAA2'
TVR4N X
TVR4J
TOSHIBA RECTIFIER
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