TB60S
Abstract: No abstract text available
Text: VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF www.vishay.com Vishay Semiconductors HEXFRED , Ultrafast Soft Recovery Diode, 15 A VS-HFA15 TB60SPbF FEATURES VS-HFA15 TB60-1PbF • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Meets MSL level 1, per J-STD-020, LF maximum
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VS-HFA15TB60SPbF,
VS-HFA15TB60-1PbF
VS-HFA15
TB60SPbF
TB60-1PbF
J-STD-020,
IEC61249-2-21
2002/95/EC
AEC-Q101
TB60S
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Untitled
Abstract: No abstract text available
Text: VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF www.vishay.com Vishay Semiconductors HEXFRED , Ultrafast Soft Recovery Diode, 15 A VS-HFA15 TB60SPbF FEATURES VS-HFA15 TB60-1PbF • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Meets MSL level 1, per J-STD-020, LF maximum
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VS-HFA15TB60SPbF,
VS-HFA15TB60-1PbF
VS-HFA15
TB60SPbF
TB60-1PbF
J-STD-020,
IEC61249-2-21
2002/95/EC
AEC-Q101
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TRANSISTOR SMD MARKING CODE 2xb
Abstract: smd transistor b3 VS-HFA15 TB60S HFA15TB60-1
Text: VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF www.vishay.com Vishay Semiconductors HEXFRED , Ultrafast Soft Recovery Diode, 15 A VS-HFA15 TB60SPbF FEATURES VS-HFA15 TB60-1PbF • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Meets MSL level 1, per J-STD-020, LF maximum
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VS-HFA15TB60SPbF,
VS-HFA15TB60-1PbF
VS-HFA15
TB60SPbF
TB60-1PbF
J-STD-020,
IEC61249-2-21
2002/95/EC
AEC-Q101
TRANSISTOR SMD MARKING CODE 2xb
smd transistor b3
TB60S
HFA15TB60-1
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Untitled
Abstract: No abstract text available
Text: VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF www.vishay.com Vishay Semiconductors HEXFRED , Ultrafast Soft Recovery Diode, 15 A VS-HFA15 TB60SPbF FEATURES VS-HFA15 TB60-1PbF • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Meets MSL level 1, per J-STD-020, LF maximum
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VS-HFA15TB60SPbF,
VS-HFA15TB60-1PbF
VS-HFA15
TB60SPbF
TB60-1PbF
J-STD-020,
IEC61249-2-21
2002/95/EC
AEC-Q101
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tegra3
Abstract: nvidia tegra 4 arm 9435 nvidia tegra 3 OMAP 4470 tegra 2 1/Z160 gpu Nexus S camera IMX6QUAD tegra 3
Text: TM September 2013 • • • • • • Graphics in Freescale Introduction to graphics standards OpenGL ES vs OpenGL ES 2.0 vs OpenGL ES 3.0 vs OpenGL Freescale GPU_SDK Boundaries and relationship between layers and tools Benchmarks TM 2 Best Graphics Performance
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MPC5645S
MPC5606S
S12ZVH
S12XHYDA
tegra3
nvidia tegra 4
arm 9435
nvidia tegra 3
OMAP 4470
tegra 2
1/Z160 gpu
Nexus S camera
IMX6QUAD
tegra 3
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266CT125-3E2A
Abstract: GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 CD4093 IC details IRF540 complementary ca3103 IR7509 Toroid 3E2A
Text: AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit
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AN-937
500ns/div
266CT125-3E2A
GBAN-PVI-1
240XT250-3EA2
HEXFET Power MOSFET designer manual
CD4093
CD4093 IC details
IRF540 complementary
ca3103
IR7509
Toroid 3E2A
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GBAN-PVI-1
Abstract: ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary
Text: Index AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit
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AN-937
500ns/div
GBAN-PVI-1
ca3103
266CT125-3E2A
IR7509
ic cd4093
oscillator with CD4093 Types
dc to dc chopper
zener in4148
240XT250-3EA2
IRF540 complementary
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VS-GB75DA120UP
Abstract: No abstract text available
Text: Not recommended for new designs, use VS-GB90DA120U VS-GB75DA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy
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VS-GB90DA120U
VS-GB75DA120UP
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
VS-GB75DA120UP
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VS-GB75DA120UP
Abstract: No abstract text available
Text: Not Available for New Designs, Use VS-GB90DA120U VS-GB75DA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy
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VS-GB90DA120U
VS-GB75DA120UP
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
VS-GB75DA120UP
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BULT118
Abstract: BULK118
Text: BULK118 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BULK118 IS REVERSE PINS OUT Vs STANDARD SOT-82 PACKAGE AND SAME PINS OUT Vs BULT118 SOT-32 PACKAGE STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS
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BULK118
BULK118
OT-82
BULT118
OT-32
OT-82
BULT118
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Untitled
Abstract: No abstract text available
Text: Not recommended for new design, use VS-GA250SA60S VS-GA200SA60SP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available
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VS-GA250SA60S
VS-GA200SA60SP
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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BULT118
Abstract: BULK118
Text: BULK118 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ BULK118 IS REVERSE PINS OUT Vs STANDARD SOT-82 PACKAGE AND SAME PINS OUT Vs BULT118 SOT-32 PACKAGE STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY
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BULK118
BULK118
OT-82
BULT118
OT-32
BULT118
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transistor b 1238
Abstract: 647H 20-PIN LZ21N3V LZ21N3VS WSOP020-P-0525
Text: LZ21N3V/VS 1/2-type Interline Color CCD Area Sensors with 2 140 k Pixels LZ21N3V/VS DESCRIPTION PIN CONNECTIONS The LZ21N3V/VS are 1/2-type 8.08 mm solidstate image sensors that consist of PN photodiodes and CCDs (charge-coupled devices). With approximately 2 140 000 pixels (1 704 horizontal x
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LZ21N3V/VS
LZ21N3V/VS
20-PIN
transistor b 1238
647H
LZ21N3V
LZ21N3VS
WSOP020-P-0525
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Untitled
Abstract: No abstract text available
Text: Dual, 16 MHz, Rail-to-Rail FET Input Amplifier AD823 Data Sheet FEATURES CONNECTION DIAGRAM OUT2 +IN1 3 6 –IN2 –VS 4 5 +IN2 AD823 RL = 100kΩ CL = 50pF +VS = +3V G = +1 500mV 00901-002 GND 200µs Figure 2. Output Swing, +VS = +3 V, G = +1 2 1 +VS = +5V
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AD823
500mV
AD823ARZ-R7
AD823AR-EBZ
D00901-0-11/11
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VS-GB75SA120UP
Abstract: No abstract text available
Text: Not recommended for new design, use VS-GB90SA120U VS-GB75SA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • • • • • • • • SOT-227 PRODUCT SUMMARY BENEFITS VCES 1200 V IC DC 75 A at 95 °C
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VS-GB90SA120U
VS-GB75SA120UP
OT-227
OT-227
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VS-GB75SA120UP
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Untitled
Abstract: No abstract text available
Text: Ultralow Power Video Filter with Power-Down ADA4430-1 PIN CONFIGURATION FEATURES ADA4430-1 VIN 1 GND 2 x1 2×R 6 VS 5 DIS 4 VOUT SAG 3 2×R 2×R 05885-001 R Figure 1. 6.5 6.0 VS = 3V VS = 5V 5.5 GAIN dB Qualified for automotive applications 6th-order performance, low-pass video filter
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ADA4430-1
D05885-0-9/10
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ADA44330-1
Abstract: ADA4430-1 sag sd transistor
Text: Ultralow Power Video Filter with Power-Down ADA4430-1 FEATURES PIN CONFIGURATION ADA4430-1 VIN 1 GND 2 x1 2×R 6 VS 5 DIS 4 VOUT SAG 3 2×R 2×R 05885-001 R Figure 1. 6.5 6.0 VS = 3V VS = 5V 5.5 GAIN dB Qualified for automotive applications 6th-order performance, low-pass video filter
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ADA4430-1
OT-23
ADA4430-1
D05885-0-6/10
ADA44330-1
sag sd transistor
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sag sd transistor
Abstract: ADA4430-1 0588 ADA44330-1 ADV7174 ADV7190 ADV7191
Text: Ultralow Power Video Filter with Power-Down ADA4430-1 FEATURES PIN CONFIGURATION ADA4430-1 VIN 1 GND 2 x1 2×R 6 VS 5 DIS 4 VOUT SAG 3 2×R 2×R 05885-001 R Figure 1. 6.5 6.0 VS = 3V VS = 5V 5.5 GAIN dB Qualified for automotive applications 6th-order performance, low-pass video filter
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ADA4430-1
D05885-0-9/10
sag sd transistor
ADA4430-1
0588
ADA44330-1
ADV7174
ADV7190
ADV7191
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EPM7128 EPLD
Abstract: different vendors of cpld and fpga EPM7128 Datasheet Actel part number Actel pdf on sram capacity of EPROM max plusII flex 7000 Xilinx counter FLEX8000 MAX9000
Text: PIB 18 CPLDs vs. FPGAs: Comparing High-Capacity Programmable Logic CPLDs vs. FPGAs Comparing High-Capacity Programmable Logic February 1995, ver. 1 Introduction Product Information Bulletin 18 The high-capacity programmable logic device HCPLD market has
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different vendors of cpld and fpga
Abstract: EPM7128 EPLD epm9560 die FLEX8000 MAX9000
Text: PIB 18 CPLDs vs. FPGAs: Comparing High-Capacity Programmable Logic CPLDs vs. FPGAs Comparing High-Capacity Programmable Logic February 1995, ver. 1 Introduction Product Information Bulletin 18 The high-capacity programmable logic device HCPLD market has
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TLE 7209 R
Abstract: TLE 7209R P-DSO-20-12 GPS05791 smd code sc sf tle7209 TLE 3319
Text: TLE 7209R Overview 7 A H-Bridge for DC-Motor Applications TLE 7209R 1.2 Preliminary Datasheet 1 Overview 1.1 Features Pin Configuration GND S C K /S F IN 1 VS CP VS • Operating supply voltage 5 V to 28 V • Typical RDSon = 150 mΩ for each output transistor
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7209R
P-DSO-20-12
TLE 7209 R
TLE 7209R
GPS05791
smd code sc sf
tle7209
TLE 3319
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73412
Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7
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NE46134
NE85634
NE46734
NE85634
NE46134
NE85619
NE68119
73412
NE64535
CHIP transistor 348
fvh 38
p08c
NE68039
NE889
NE02135
NE64500
NE24318
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transistor IR 324 C
Abstract: transistor selection guide
Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency d B Gain Optimum Figure, G a (d B ) Noise Noise Figure, N F opt at Optimum F re q u e n c y , f (G H z ) Typical Output Power and Gain vs. Frequency
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NE46134
NE85634
NE46134
NE46734
NE68018-T1
transistor IR 324 C
transistor selection guide
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SOT-173
Abstract: funkamateur SOT173 BFQ58 BFQ77 BFQ57 FUNKAMATEUR - Bauelementeinformation BFR94 bfr95 BFQ59
Text: FUNKAMATEUR - Bauelementeinformation Transistoren für die Hochfrequenztechnik Fortsetzung aus Heft 11/90 Typ Art An wen dung Plol tA .B G max [mW| max [V] max [V] m 60 180 20 15 2 125 250 20 15 2 >?• [•c] BFQ51 SPEp Vs, AZ BFQ51C SPEp Vs o o Ü C IO
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BFQ51
OT-37
BFQ51C
OT-173
BFQ52
BFQ53
BF054
OT-48/3
BFR95
BFR96
SOT-173
funkamateur
SOT173
BFQ58
BFQ77
BFQ57
FUNKAMATEUR - Bauelementeinformation
BFR94
BFQ59
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