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    VTP3410LA Search Results

    VTP3410LA Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VTP3410LA PerkinElmer Optoelectronics VTP Process Photodiode Original PDF
    VTP3410LA EG&G Vactec VTP Process Photodiodes Scan PDF

    VTP3410LA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP3410LAH PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a long T1, endlooking package. The package material is infrared transmitting (blocking visible light).


    Original
    PDF VTP3410LAH

    VTP3410LAH

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP3410LAH PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a long T1, endlooking package. The package material is infrared transmitting (blocking visible light).


    Original
    PDF VTP3410LAH VTP3410LAH

    VTP3410LA

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP3410LA PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a long T1, endlooking package. The package material is infrared transmitting (blocking visible light).


    Original
    PDF VTP3410LA VTP3410LA

    Untitled

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP3410LA PACKAGE DIMENSIONS inch mm CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a long T1, endlooking package. The package material is infrared transmitting (blocking visible light).


    Original
    PDF VTP3410LA

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original
    PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    VTP8651

    Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
    Text: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).


    Original
    PDF VTP100 VTP8651 VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100

    Untitled

    Abstract: No abstract text available
    Text: VTP3410LA VTP Process Photodiodes PACKA G E DIM ENSIONS inch mm .0 2 3 (0 .5 8 ) .037 ( 0 .9 4 ) NOM. .160 ( 4 .0 6 ) .1 4 0 ( 3 .5 6 ) .017 ( 0 .4 3 ) .0 2 6 .020 ( 1 .2 7 ) (0 .6 6 ) (0 .5 1 ) (2 .5 4 ) £LV t .025 (0 .6 4 ) .040 (1 .0 0 ) - -0 5 0 '( 1 . 2 7 )


    OCR Scan
    PDF VTP3410LA