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    C2512

    Abstract: SMD DIODE A13 7C251 smd diode code a8 C2514 smd diode code A13 CY7C251 CY7C254 CY7C251-55 C25-12
    Text: CY7C251 CY7C254 Features A9 1 28 VCC A8 2 27 A10 A7 3 26 A11 A6 4 25 A12 A5 5 24 A13 A4 6 23 CS1 A3 7 22 CS2 A2 8 21 CS3 A1 9 7C254 20 CS4 A0 10 19 O7 O0 11 18 O6 O1 12 17 O5 O2 13 16 O4 GND 14 15 O3 A12 512 x 256 X O5 A8 A7 A6 O4 ADDRESS DECODER A4 O3 A3


    Original     		PDF CY7C251 CY7C254 7C254 C251-2 C251-1 C2512 SMD DIODE A13 7C251 smd diode code a8 C2514 smd diode code A13 CY7C251 CY7C254 CY7C251-55 C25-12

    CY27C256A-45WMB

    Abstract: w16 06 CY27C256A-45JC CY27C256A-45PC CY27C256A-45QMB CY27C256A-45WC CY27C256A-45ZC CY27C256A-55JC CY27C256A-70WC CY27C256A-90JC
    Text: fax id: 3026 CY27C256A 1-Megabit 32K x 8 CMOS EPROM Features • • • • • • windowed packages (28-pin hermetic DIP and 32-pin LCC) which allow the device to be erased with UV light for 100% reprogrammability. Very fast read access time: (45−200 ns)


    Original     		PDF CY27C256A 28-pin 32-pin CY27C256A CY27C256A-45WMB w16 06 CY27C256A-45JC CY27C256A-45PC CY27C256A-45QMB CY27C256A-45WC CY27C256A-45ZC CY27C256A-55JC CY27C256A-70WC CY27C256A-90JC

    CY27C256A-45JC

    Abstract: CY27C256A-45PC CY27C256A-45QMB CY27C256A-45WC CY27C256A-45WMB CY27C256A-45ZC CY27C256A-55JC
    Text: fax id: 3026 1CY 27C2 56 A CY27C256A 32K x 8 CMOS EPROM Features • • • • • • windowed packages 28-pin hermetic DIP and 32-pin LCC which allow the device to be erased with UV light for 100% reprogrammability. Very fast read access time: (45−200 ns)


    Original     		PDF CY27C256A 28-pin 32-pin CY27C256A CY27C256A-45JC CY27C256A-45PC CY27C256A-45QMB CY27C256A-45WC CY27C256A-45WMB CY27C256A-45ZC CY27C256A-55JC

    Delta W16

    Abstract: 27C128 C128 CY27C128 27C128-45
    Text: CY27C128 128K 16K x 8ĆBit CMOS EPROM CY27C128 automatically powers down into a lowĆpower standĆby mode. The CY27C128 is packaged in the industry standard 600Ćmil DIP and LCC packages. military) The CY27C128 is also available in a CerĆ D Low power DIP package equipped with an erasure


    Original     		PDF CY27C128 CY27C128 600mil Delta W16 27C128 C128 27C128-45

    27C128

    Abstract: 27C128-200 eprom 27C128 27C128 eprom transistor C128 27C1 C128 CY27C128 c1281
    Text: fax id: 3011 1CY 27C1 28 CY27C128 128K 16K x 8-Bit CMOS EPROM Features CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the EPROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and byte-wide intelligent programming algorithms.


    Original     		PDF CY27C128 CY27C128 384-word 27C128 27C128-200 eprom 27C128 27C128 eprom transistor C128 27C1 C128 c1281

    C5121

    Abstract: C5127 C512 CY27C512 CY27C512-45JC CY27C512-45PC CY27C512-45QMB CY27C512-45WC CY27C512-45WMB CY27C512-45ZC
    Text: fax id: 3019 1CY 27C5 12 CY27C512 64K x 8 CMOS EPROM Features • • • • • • Very Fast Read Access Time: 45 - 200 ns 5V ± 10% Power Supply Capable of withstanding >2001V ESD Latch-up Protection up to 200mA Two line control functions to prevent bus contention


    Original     		PDF CY27C512 200mA 32-pin 28-pin 28-pin, 600-mil 32-pin, CY27C512 C5121 C5127 C512 CY27C512-45JC CY27C512-45PC CY27C512-45QMB CY27C512-45WC CY27C512-45WMB CY27C512-45ZC

    CY27C256

    Abstract: 27C256-70 27C256 27C256-200 27C256-45 27C256 UV 27C256-150 27c256120
    Text: fax id: 3013 1CY 27C2 56 CY27C256 32K x 8-Bit CMOS EPROM Features able in a CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the EPROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and


    Original     		PDF CY27C256 CY27C256 27C256-70 27C256 27C256-200 27C256-45 27C256 UV 27C256-150 27c256120

    27C256-200

    Abstract: CY27C256 27C256 27C256-45 27C256-70 27C256-150 27c256 cypress 27C256200 eprom 27c256 28 PIN DIP 150 NS
    Text: CY27C256 32K x 8ĆBit CMOS EPROM into a lowĆpower standĆby mode. The and low current requirements allow for CY27C256 is packaged in the industry gang programming. The EPROM cells alĆ standard 600Ćmil DIP, PLCC, and TSOP low each memory location to be tested


    Original     		PDF CY27C256 CY27C256 600mil 27C256-200 27C256 27C256-45 27C256-70 27C256-150 27c256 cypress 27C256200 eprom 27c256 28 PIN DIP 150 NS

    CY27C256A-120WC

    Abstract: c256a CY27C256A-90WC CY27C256A-90JC CY27C256A-200PC 1N3064 CY27C256A-120PC W16 O4
    Text: fax id: 3026 CY27C256A 32K x 8 CMOS EPROM Features 28-pin, 600-mil DIP, 32-pin LCC and PLCC, and 28-pin TSOP-I packages. The CY27C256A is available in windowed and opaque packages. Windowed packages allow the device to be erased with UV light for 100% reprogrammability.


    Original     		PDF CY27C256A 28-pin, 600-mil 32-pin 28-pin CY27C256A CY27C256A-120WC c256a CY27C256A-90WC CY27C256A-90JC CY27C256A-200PC 1N3064 CY27C256A-120PC W16 O4

    C5121

    Abstract: c5125 C5126 1N3064 27C512-120 27C512-150 C512 CY27C512 C5124 CY27C512-150PC
    Text: ADVANCED INFORMATION CY27C512 64K x 8 CMOS EPROM Functional Description Features D D D D D The CY27C512 is a highĆperformance, 512K CMOS EPROM organized in 64 Kbytes. It is available in industryĆstandard 28Ćpin, 600Ćmil DIP, 32Ćpin LCC and PLCC, and 28Ćpin TSOPĆI packages. The


    Original     		PDF CY27C512 CY27C512 28pin, 600mil 32pin 28pin C5121 c5125 C5126 1N3064 27C512-120 27C512-150 C512 C5124 CY27C512-150PC

    C286

    Abstract: CY7C287 CY7C286-70WC C2867 C2863 C2868
    Text: CY7C286 64K x 8 Reprogrammable PROM Features in the active mode and 40 mA in the standby mode. Access time is 45 ns. • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — tAA = 45 ns • Low power — 120 mA active The CY7C286 is available in a cerDIP package equipped with


    Original     		PDF CY7C286 CY7C286 28-Lead 600-Mil) C286 CY7C287 CY7C286-70WC C2867 C2863 C2868

    H5128

    Abstract: CY27H512
    Text: PRELIMINARY Functional Description Features D D D D D Ċ Ċ Ċ Ċ High speed tAA = 25 ns max. commercial tAA = 35 ns max. (military) Low power 275 mW max. Less than 85 mW when deselected ByteĆwide memory organization 100% reprogrammable in the windowed package


    Original     		PDF CY27H512 28pin, 600mil 32pin 28pin 40MHz H5128

    27h256

    Abstract: h2566 H2567 CY27H256-70LMB CY27H256 H256 27H256-30
    Text: PRELIMINARY CY27H256 32K x 8 HighĆSpeed CMOS EPROM Functional Description Features D D D D D The CY27H256 is a highĆperformance, 256K CMOS EPROM organized in 32 Kbytes. It is available in industryĆstandard 28Ćpin, 600Ćmil DIP, 32Ćpin LCC and PLCC, and 28Ćpin TSOPĆI packages.


    Original     		PDF CY27H256 CY27H256 28pin, 600mil 32pin 28pin 40MHz 27h256 h2566 H2567 CY27H256-70LMB H256 27H256-30

    CY27H512

    Abstract: No abstract text available
    Text: fax id: 3020 1CY 27H5 12 CY27H512 PRELIMINARY 64K x 8 High-Speed CMOS EPROM Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected


    Original     		PDF CY27H512 32-pin 28-pin 28-pin, 600-mil CY27H512

    Untitled

    Abstract: No abstract text available
    Text: fax id: 3026 1-Megabit 32K x 8 CMOS EPROM Features • • • • • • Very fast read access time: (45-200 ns) 5V ± 10% power supply Capable of withstanding >2001V ESD Latch-up protection up to 200 mA Two line control functions to prevent bus contention


    OCR Scan     		PDF 28-pin 28-pin, 600-mil 32-pin, 32-pin CY27C256A

    CY27C256

    Abstract: No abstract text available
    Text: fax id: 3013 p yXpX : v « *1 CY27C256 - 32K x 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) able in a CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light,


    OCR Scan     		PDF CY27C256 CY27C256

    W16 sot 23

    Abstract: 27C128-200 sot 23 W16 27C128 CY27C128
    Text: CYPRESS Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected • ±10% Power supply tolerance Functional Description


    OCR Scan     		PDF CY27C128 CY27C128 384-word 600-mil mem27C128â 200WC 28-Lead W16 sot 23 27C128-200 sot 23 W16 27C128

    Untitled

    Abstract: No abstract text available
    Text: ^ s b b b b b b ? ¿s* rszgggfjKr CY27C512 r r ^ 'n p n n L> 1 1 i l l L o O 64K x 8 CMOS EPROM Features • • • • • • Very Fast Read Access Time: 45 - 200 ns 5V ± 10% Power Supply Capable of withstanding >2001V ESD Latch-up Protection up to 200mA


    OCR Scan     		PDF CY27C512 200mA 32-pin 28-pin 28-pin, 600-mil 32-pin, CY27C512

    Untitled

    Abstract: No abstract text available
    Text: CY27C256 y CYPRESS 32K x 8-Bit CMOS EPROM into a low-power stand-by mode. The CY27C256 is packaged in the industry standard 600-mil DIP, PLCC, and TSO P packages. T he CY27C256 is also available in a C erD IP package equipped with an erasure window to provide for reprogram ­


    OCR Scan     		PDF CY27C256 CY27C256 600-mil CY27C256Tâ 28-Lead 300-MU) 27C256Tâ 28-Thin

    27C256

    Abstract: 27C256-45 CY27C256 27c256-200 27C256-150
    Text: 32K X 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns commercial and m ilitary • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less th a n 83 mW when deselected • ± 10% Power supply tolerance Functional Description


    OCR Scan     		PDF CY27C256 768-word 600-miI CY27C256Tâ 28-Lead 300-Mil) 27C256 27C256-45 27c256-200 27C256-150

    27C256-200

    Abstract: 27C256 27C256-2 27C256-45 27C256-70 CY27C256 27C256-55 CY27C256T-70WMB 27C256 UV 27c256120
    Text: CY27C256 V CYPRESS Features • W ide speed range — 45 ns to 200 ns com m ercial and m ilitary • Low power — 248 raW (commercial) — 303 mW (m ilitary) • Low standby power — Less th a n 83 raW when deselected • ± 10% Power supply tolerance


    OCR Scan     		PDF CY27C256 768-word 600-mil 28-Lead 300-Mil) CY27C256Tâ 27C256-200 27C256 27C256-2 27C256-45 27C256-70 27C256-55 CY27C256T-70WMB 27C256 UV 27c256120

    14A0

    Abstract: No abstract text available
    Text: fax id: 3026 C Y 2 7 C 2 5 6 A 3 2 K x 8 CMOS EPROM Featu res • Very F ast Read A c c e s s T im e: 45 - 2 0 0 ns • SV ± 10% P o w e r S u p p l y • C a p a b le o f w i t h s t a n d i n g >200 1V ESD • L a tc h - u p P r o t e c tio n up to 2 0 0 m A


    OCR Scan     		PDF 28-pin CY27C256A 28-pin 32-pin 14A0

    Untitled

    Abstract: No abstract text available
    Text: fax id: 3026 CY27C256A w CYPRESS 32K x 8 CMOS EPROM Features 28-pin, 600-mil DIP, 32-pin LCC and PLCC, and 28-pin TSOP-I packages. The CY27C256A is available in windowed and opaque packages. Windowed packages allow the device to be erased with UV light for 100% reprogrammability.


    OCR Scan     		PDF CY27C256A 28-pin, 600-mil 32-pin 28-pin CY27C256A

    Untitled

    Abstract: No abstract text available
    Text: à * T7CC1 CY27C512 ADVANCED INFORMATION C Y r n h o o 64K x 8 CMOS EPROM Features Functional D escription • CMOS for optimum speed/power • High speed — Iaa - 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization


    OCR Scan     		PDF CY27C512 28-pin 28-pin, 600-mil 32-pin CY27C512