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    27C1 Search Results

    27C1 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    27C16Q55/B Rochester Electronics LLC Replacement for National Semiconductor part number NMC27C16Q55/883. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    27C16Q45/B Rochester Electronics LLC Replacement for National Semiconductor part number NMC27C16Q45/883. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    27C128-30MD Rochester Electronics LLC 27C128 - 16K X 8 EPROM Visit Rochester Electronics LLC Buy
    27C128-12MD Rochester Electronics LLC Replacement for Microchip part number 27C128-12MD. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
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    27C1 Price and Stock

    Vishay Semiconductors BZD27C15P-M3-08

    DIODE ZENER 15V 800MW DO219AB
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    DigiKey BZD27C15P-M3-08 Cut Tape 29,872 1
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    Vishay Semiconductors BZD27C160P-HE3-08

    DIODE ZENER 160V 800MW DO219AB
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    Vishay Semiconductors BZD27C12P-M3-08

    DIODE ZENER 12V 800MW DO219AB
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    Vishay Semiconductors BZD27C160P-E3-08

    DIODE ZENER 160V 800MW DO219AB
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    Vishay Semiconductors BZD27C110P-M3-18

    DIODE ZENER 110V 800MW DO219AB
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    27C1 Datasheets (331)

    Part ECAD Model Manufacturer Description Curated Type PDF
    27C1001 STMicroelectronics 1 Mbit 128Kb x8 UV EPROM and OTP EPROM Original PDF
    27C1001 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    27C1001 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    27C1001 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    27C100-120V10 Intel 1M (128K x 8) CHMOS EPROM Scan PDF
    27C100-150V10 Intel 1M (128K x 8) CHMOS EPROM Scan PDF
    27C100-200V10 Intel 1M (128K x 8) CHMOS EPROM Scan PDF
    27C101 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    27C1024 Advanced Micro Devices 1 Megabit (65k x 16 bit) CMOS EPROM Original PDF
    27C1024 Macronix International 1M-BIT [128K x 8/64K x 16] CMOS EPROM Original PDF
    27C1024 STMicroelectronics 1 Mbit 64Kb x16 UV EPROM and OTP EPROM Original PDF
    27C1024-10/D General Semiconductor 1024K CMOS UV Erasable PROM Scan PDF
    27C1024-15/D General Semiconductor 1024K CMOS UV Erasable PROM Scan PDF
    27C1024-20/D General Semiconductor 1024K CMOS UV Erasable PROM Scan PDF
    27C1028 Fujitsu CMOS 1048576 BIT UV ERASABLE READ ONLY MEMORY Scan PDF
    27C128 Microchip Technology 128K (16Kx8) CMOS EPROM Original PDF
    27C128 Microchip Technology 128K (16K x 8) CMOS EPROM Original PDF
    27C128 Microchip Technology 128K (16K x 8) CMOS EPROM Original PDF
    27C128 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    27C128 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ...

    27C1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    27C16 EPROM

    Abstract: eprom 27C16 27C32 27C16 27c16 uv 27C16Q 27C128 27C256 27C64 C1995
    Text: 27C16 16 384-Bit 2048 x 8 UV Erasable CMOS PROM Military Qualified General Description Features The 27C16 is a high speed 16K UV erasable and electrically reprogrammable CMOS EPROM ideally suited for applications where fast turnaround pattern experimentation and


    Original
    PDF 27C16 384-Bit 27C16 24-pin 27C16 EPROM eprom 27C16 27C32 27c16 uv 27C16Q 27C128 27C256 27C64 C1995

    27C128

    Abstract: 27C128-12 27C128-15 27C128-17 27C128-20 27C128-25
    Text: Obsolete Device 27C128 128K 16K x 8 CMOS EPROM 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC PGM A13 A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 30 31 1 32 2 5 29 6 28 7 27 8 9 10 11 26 25 24 23 A8 A9 A11 NC OE A10 CE O7 O6 20 19 18 21 17 22 13 16 12 15 A6 A5 A4


    Original
    PDF 27C128 27C128 l35-882 D-85737 NL-5152 27C128-12 27C128-15 27C128-17 27C128-20 27C128-25

    Untitled

    Abstract: No abstract text available
    Text: 27C1512T 512Kb 32K x 16-bit OTP EPROM MCM Memory Logic Diagram FEATURES: DESCRIPTION: • 32K x 16 Bit OTP EPROM organization • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - > 100 Krad (Si), depending upon space mission


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    PDF 27C1512T 512Kb 16-bit) 27C1512T

    27C1024

    Abstract: MIL-M-38535 2C9237 4B942 3B93
    Text: PAGE 1 OF 12 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-27C1024 CMOS EPROM RELIABILITY DATA -125°C OPERATING LIFE TEST -200°C DATA RETENTION BAKE -PROGRAM AND ERASE -125°C OPERATING LIFE TEST (PLASTIC) -150°C RETENTION BAKE (PLASTIC) -15 PSIG PRESSURE POT


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    PDF AT-27C1024 MIL-M-38535 AT-27C010 AT-27C1024 27C1024 2C9237 4B942 3B93

    Untitled

    Abstract: No abstract text available
    Text: 27C1100/27C1024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • 64K x 16 organization 27C1024, JEDEC pin • • • • • • Operating current: 40mA • Standby current: 100uA • Package type: out 128K x 8 or 64K x 16 organization(27C1100, ROM pin out compatible)


    Original
    PDF MX27C1100/27C1024 8/64K MX27C1024, 100uA MX27C1100, 40pin MX27C1024 MX27C1024) MX27C1100) FEB/25/2000

    D4001

    Abstract: No abstract text available
    Text: 27C1512T 512Kb 32K x 16-bit OTP EPROM MCM A5 A9 X-Decoder 1024 x 512 Memory Matrix A12 A16 I/O0 Input Data Control I/O7 Y-Gating Y-Decoder CE OE A0-A4 A10-A11 PGM Memory VCC VPP H : High Threshold Inverter H VSS Logic Diagram FEATURES: DESCRIPTION: • 32K x 16 Bit OTP EPROM organization


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    PDF 27C1512T 512Kb 16-bit) A10-A11 27C1512T D4001

    27C128

    Abstract: 27C128-200 eprom 27C128 27C128 eprom transistor C128 27C1 C128 CY27C128 c1281
    Text: fax id: 3011 1CY 27C1 28 27C128 128K 16K x 8-Bit CMOS EPROM Features CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the EPROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and byte-wide intelligent programming algorithms.


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    PDF CY27C128 CY27C128 384-word 27C128 27C128-200 eprom 27C128 27C128 eprom transistor C128 27C1 C128 c1281

    MX27C1100

    Abstract: No abstract text available
    Text: Introduction Selection Guide 27C1100/27C1024 1M-BIT 128K x 8/64K x 16 CMOS EPROM FEATURES • 64K x 16 organization(27C1024, JEDEC pin out) • 128K x 8 or 64K x 16 organization(27C1100, ROM pin out compatible) • +12.5V programming voltage • Fast access time: 55/70/85/100/120/150 ns


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    PDF MX27C1100/27C1024 8/64K MX27C1024, MX27C1100, 40pin MX27C1100/1024 MX27C1100

    Untitled

    Abstract: No abstract text available
    Text: & 27C128 Microchip 128K 16K X 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance The Microchip Technology Inc 27C128 is a CMOS 128K • • • • — 120ns access tim e available CMOS Technology for low power consumption — 20mA Active current


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    PDF 27C128 27C128 120ns 120ns. 11003H

    Untitled

    Abstract: No abstract text available
    Text: 27C128 & Microchip _ 128K 16K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120ns Maximum access time • CMOS Technology for low power consumption The Microchip Technology Inc 27C 128 is a CMOS 128K bit (electrically) Programmable Read Only Memory. The


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    PDF 27C128 120ns 120ns. DS11003F-7 DS11003F-8

    MBM27C128-25

    Abstract: M5M27C128K-15 M5M27C128K15 27c1028 TI 27C128 uveprom 57C128F-90 57C128F-70 AT27C128-12 i2764 27C128-15
    Text: - 92 - 2 7 C 12 8 m £ £ i u o s i x 4 M » 7 A üb ns) 27C128-12 MICROCHIP —70 120 120 65 50 4. 5 - 5 . 5 20/2 0.8 2.0 6 0. 45/2.1 2.4/0.4 12 27C128-15 MICROCHIP 0—-70 150 150 70 50 4. 5— 5. 5 20/2 0.8 2.0 6 0. 45/2.1 2. 4/0. 4 12 12 CO TAAC max


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    PDF 27C12S-12 27C128-15 27C128-17 27C128-20 27C128-25 M5M27C128K-2 MBM27CI28-20 MBM27C128-25 384x8) 27C128 M5M27C128K-15 M5M27C128K15 27c1028 TI 27C128 uveprom 57C128F-90 57C128F-70 AT27C128-12 i2764

    Untitled

    Abstract: No abstract text available
    Text: 27C128 M ic r o c h ip 128K 16K x 8 CMOS EPROM FEATURES PACKAGE TYPE DIP/SOIC • High speed performance - 120 ns access time available Vpp C A12C 2 A it; 3 A6C 4 A5 C 5 A4 C 6 A3 C 27C128 A2 C 8 A lC 9 AO C 10 • CMOS Technology for low power consumption


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    PDF 27C128 28-pin DS11003J-page L103S01

    27C020

    Abstract: 27c256 Ram pinout diagram National Controls ne 545 ve200 27C040 27C080 27C128 27C256 27C512 NM27C128
    Text: tm 27C12Ô 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM 27C128 is one m em ber of a high density EPROM Family which range in densities up to 4 Mb. The NM 27C128 is a high performance 128K UV Erasable Electri­ cally Program mable Read Only Memory. It is m anufactured with


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    PDF NM27C128 072-Bit NM27C128 quick93-856856 27C020 27c256 Ram pinout diagram National Controls ne 545 ve200 27C040 27C080 27C128 27C256 27C512

    27S43

    Abstract: 82S191B 27S45 WSI Cross Reference 27C49 pRoM 27s49 SS1203 S-57
    Text: I 'M PROM/RPROM CROSS REFERENCE AMD WSI NATIONAL WSI AM 27C49 A M 27C191 A M 27C 291 AM 27PS43 AM 27S43 A M 27S43A AM 27S45 AM 27S49 A M 27 S51 A M 27S51A A M 2 7 S1 9 1 A M 2 7 S2 9 1 W S57C 4 9 B / 4 9 C W S57 C 2 9 1 B W S57 C 2 9 1 B W S57C 4 3B / 43 C


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    PDF 27C49 27C191 27PS43 27S43 27S43A 27S45 27S49 27S51A S57C45 S57C51C 82S191B WSI Cross Reference pRoM 27s49 SS1203 S-57

    MA2800

    Abstract: 27C32 NMC27C32 rd 3153 27C16* block diagram MA2000 27C16 UV-prom MA2732 A0-A15
    Text: PRELIMINARY August 1983 MA2732 8k-Byte CMOS UVPROM/RAM Module General Description Features The MA2732 8k-byte CMOS UVPROM module is a member of the MA2000 series family, it provides a standard m odular m acrocom ponent package and bus interconnect fa c ility for industry-standard 27C16 or 27C32 UVPROMs.


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    PDF MA2732 MA2000 27C16 27C32 MA2800 NMC27C32 rd 3153 27C16* block diagram UV-prom A0-A15

    27C010

    Abstract: 27C020 27C040 27C080 27C128 27C256 27C512 NM27C128
    Text: 27C128 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM 27C128 is one m em ber of a high density EPROM Family which range in densities up to 4 Mb. The NM 27C 128 is a high performance 128K UV Erasable Electri­ cally Program mable Read O nly Memory. It is m anufactured with


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    PDF NM27C128 072-Bit 27C010 27C020 27C040 27C080 27C128 27C256 27C512

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor 27C121ZB 131,072-Word x 8-Bit One Time PROM DESCRIPTION The M SM 27C121ZB is a 1 Mb electrically Program mable Read-Only Mem ory organized as 131,072 words x 8 bits. The M SM 27C121ZB operates on a single 5 V pow er supply and is TTL com patible. Since the


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    PDF MSM27C121ZB 072-Word 27C121ZB 32pin 32-pin

    27C101ZB

    Abstract: No abstract text available
    Text: Ms OTP ROMS 1 -M eg O T P R O M s Part Number Configuration Pins / Package Access Time M ax ns Voltage M SM 27C121ZB 128K x 8 32/ DIP, SO P, T S O P 70 5.0 V M SM 27C101ZB 128K x 8 3 2 / D IP , S O P ,T S O P 100 5.0 V M SM 27C131ZB 128K x 8 3 2 / DIP, SOP, T S O P


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    PDF 27C121ZB 27C101ZB 27C131ZB 27C221ZB 27C421AZB 27C401AZB 27C431AZB 27C422ZB 27C402ZB 27C432ZB

    Untitled

    Abstract: No abstract text available
    Text: M 27C128 ic r o c h ip 128K 16K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120 ns access time available • CMOS Technology for low power consumption —20 mA Active current — 100 nA Standby current • Factory programming available


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    PDF 27C128 28-pin 32-pin blD32Dl DS110031-page 27C128

    Photocell

    Abstract: 27c12 Scans-0017376 3 PIN photocell
    Text: EDISWAN 27CI2 PHOTO-CELL TENTATIVE GENERAL The 27C12 is a vacuum Photo-Cell with a caesium-oxygen-silver cathode surface, having maximum sensitivity in the near infra-red region of the spectrum. It is highly sensitive to incandescent light sourccs and may be used for machine control, counting applications,


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    PDF 27C12 27CI2 27C12 0-05f Photocell Scans-0017376 3 PIN photocell

    Untitled

    Abstract: No abstract text available
    Text: S G S -T H O M S O N M 27C1024 1024K 64K x 16 CMOS UV EPROM - OTP ROM VERY FAST ACCESS TIME : 120 ns. COMPATIBLE WITH HIGH SPEED M ICRO­ PROCESSORS, ZERO W AIT STATE. LOW "CMOS'' CONSUMPTION : - Active Current 35 mA - Standby Current 1 mA. PROGRAMMING VOLTAGE 12.75V.


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    PDF 27C1024 1024K 27C1024 576-bit 40-PIN M27C1024 27C1024-20XC1 PLCC44

    27C128 General Semiconductor

    Abstract: 27c128
    Text: 27C128 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM 27C128 is one m em ber of a high density EPROM Family which range in densities up to 4 Mb. The NM 27C128 is a high performance 128K UV Erasable Electri­ cally Program mable Read O nly Memory. It is m anufactured with


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    PDF NM27C128 072-Bit 27C128 27C128 General Semiconductor

    mbm27c128

    Abstract: CERAMIC LEADLESS CHIP CARRIER LCC 32 socket 27C128-25-X BM TVS M27C128
    Text: FU JITSU CMOS UV ERASABLE 131072-BIT READ ONLY MEMORY TS119-A886 June 1988 CMOS 131072 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C128 is a high speed 131,072 bit static complementary MOS erasable and electrically reprogrammable read only memory EPROM .


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    PDF 131072-BIT TS119-A886 27C128 28-pin 32-Pad 27C128. A950S4-3197, 0V2154-872C2 mbm27c128 CERAMIC LEADLESS CHIP CARRIER LCC 32 socket 27C128-25-X BM TVS M27C128

    Untitled

    Abstract: No abstract text available
    Text: $ M ic r o c h ip 27C128 128K 16K x 8 CMOS EPROM FEATURES PACKAGE TYPES • High speed performance - 120 ns access time available • CMOS Technology for low power consumption - 20 mA Active current - 100 |iA Standby current • Factory programming available


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    PDF 28-pin 32-pin 27C128 DS11003K-page 27C128 DS11003K-page8-24