DIODE W7
Abstract: No abstract text available
Text: KDS114WS SILICON EPITAXIAL PLANAR DIODE Features • Small package • Small total capacitance • Low series resistance PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W7 Applications • VHF tuner band switch Top View Marking Code: "W7" Simplified outline SOD-323 and symbol
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KDS114WS
OD-323
OD-323
DIODE W7
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Sod marking w7
Abstract: DIODE W7
Text: KDS114WS SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS FEATURES PINNING Small package. ● Small total capacitance: CT = 1.2PF max. ● Low series resistance: rs = 0.5Ω(typ.) ● DESCRIPTION PIN . 1 Cathode 2 Anode 2 1 W7 Top View Marking Code: "W7"
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KDS114WS
OD-323
OD-323
Sod marking w7
DIODE W7
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marking code w7
Abstract: No abstract text available
Text: KDS114WS SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS FEATURES PINNING Small package. ● Small total capacitance: CT = 1.2PF max. ● Low series resistance: rs = 0.5Ω(typ.) ● DESCRIPTION PIN . 1 Cathode 2 Anode 2 1 W7 Top View Marking Code: "W7"
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KDS114WS
OD-323
OD-323
marking code w7
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W7 sod 323
Abstract: No abstract text available
Text: KDS114WS SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS FEATURES PINNING Small package. ● Small total capacitance: CT = 1.2PF max. ● Low series resistance: rs = 0.5Ω(typ.) ● DESCRIPTION PIN . 1 Cathode 2 Anode 2 1 W7 Top View Marking Code: "W7"
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KDS114WS
OD-323
OD-323
W7 sod 323
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Untitled
Abstract: No abstract text available
Text: KDS114WS SILICON EPITAXIAL PLANAR DIODE Features • Small package • Small total capacitance • Low series resistance PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W7 Applications • VHF tuner band switch Top View Marking Code: "W7" Simplified outline SOD-323 and symbol
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KDS114WS
OD-323
OD-323
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W7-12D12
Abstract: W7-12D15 W7-12D5 W7-12S12 W7-12S15 W7-12S5 W7-24D5 W7-24S12 W7-24S15 W7-24S5
Text: W7 SERIES DC/DC MODULES Applications • Servers, Switches and Data Storage • Wireless Communications • Distributed Power Architecture • Semiconductor Test Equipment • Networking Gear • Data Communications • Telecommunications • Industrial / Medical
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W7 Series
Abstract: W7-12D15 smd transistor w7 transistor w7 W7-12D12 W7-12D5 W7-12S12 W7-12S15 W7-12S5 W7-24D5
Text: 1400 PROVIDENCE HIGHWAY • BUILDING 2 NORWOOD, MASSACHUSETTS 02062-5015 WWW.INTRONICS.COM W7 SERIES DC/DC MODULES Applications • Servers, Switches and Data Storage • Wireless Communications • Distributed Power Architecture • Semiconductor Test Equipment
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w7 transistor
Abstract: W7-12D12 W7-12D15 W7-12D5 W7-12S12 W7-12S15 W7-12S5 W7-24D5 W7-24S12 W7-24S15
Text: W7 Family 1400 PROVIDENCE HIGHWAY • BUILDING 2 NORWOOD, MASSACHUSETTS 02062-5015 WWW.INTRONICS.COM of 5 to 7 Watt Isolated SMD converters Features * Efficiency to 83% * Regulated output * Continuous short circuit protection * 24-Pin SMD package * 2: 1 input range
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24-Pin
W7-12S5
W7-12S12
W7-12S15
W7-12D5
W7-12D12
W7-12D15
W7-12S3
W7-24S5
W7-24S12
w7 transistor
W7-12D12
W7-12D15
W7-12D5
W7-12S12
W7-12S15
W7-12S5
W7-24D5
W7-24S12
W7-24S15
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0838-1X1T-W7
Abstract: No abstract text available
Text: INTEGRATED CONNECTOR MODULES 0838-1X1T-W7 Giagbit Power over Ethernet Plus Single Port MagJack with LEDs 2007 Bel Fuse Inc. Bel Fuse Inc. 206 Van Vorst Street, Jersey City, NJ 07302 • Tel 201-432-0463 • Fax 201-432-9542 • www.belfuse.com Specifications subject to change without notice. 11.07
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0838-1X1T-W7
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E82292
Abstract: 250VA
Text: Catalog 1308961 Issued 6-01 PCJ series Slim 5 Amp Miniature Power PC Board Relay Air Conditioners, Refrigerators, Microwave Ovens UL File No. E82292 CSA File No. 1031444 VDE File No. 122301 Features Coil Data @ 20°C • Slim outline, L20.4 x W7 x H15 mm .
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E82292
100mA
E82292
250VA
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CVP 37-003
Abstract: tsm1052 L6562AD L6562A 221K 1kv L6562A dimmer capacitor 221k 1kv STTH1R06A STP5NK60ZFP MMSD4148
Text: 1 2 3 C8 4 R17 5 6 DRAIN 330 100pF 1KV D5 DNI D 6.4mm Isolation D8 STTH1R06A CLAMP D6 DNI R18 R19 82K C4 0.01uF 630V X7R 82K LEDs per String 4 5 or 6 7 or 8 9 - 11 R20 82K D14 Iout MAX 1000mA 1000mA 500mA 500mA Jumpers Caps for 20% P-P Current Ripple W1-W2, W3-W4, W5-W7
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100pF
STTH1R06A
1000mA
500mA
3900uF
2700uF
1000uF
820uF
CVP 37-003
tsm1052
L6562AD
L6562A
221K 1kv
L6562A dimmer
capacitor 221k 1kv
STTH1R06A
STP5NK60ZFP
MMSD4148
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TSX ETY-5103
Abstract: PG-TO247-3 TSX 01 7
Text: ;8?&&6+%031 0NNK!57;X 8NUDP!<P@MQHQRNP 0>L!&!/]`Tj 10+ O .>L#ba$ + // ! +> , ; 3D@RSPD )%GXi!dXhb_gf\baTdk![\Z[!hb_fTZX!fXV[ab_bZk )!N_fdT!_bi!ZTfX!V[TdZX IA MH-/2 )%IXd\bW\V!ThT_TaV[X!dTfXW )!?jfdX`X!W8*W *W7 dTfXW )%B\Z[!cXT^!VgddXaf!VTcTU\_\fk )%Cafd\ae\V!YTef(dXVbhXdk!UbWk!W\bWX
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009-134-A
O-247
PG-TO247-3
O-247,
TSX ETY-5103
TSX 01 7
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ZENER DIODE J3
Abstract: 1SZ57-1SZ59 ZENER C 3V zener diode marking 5d zener diode T3 Marking zener diode mark J3 1SZ57 1SZ57 diode diode j5d zener diode T3
Text: W7 TOSHIBA {D IS CRET E/ OP TO } ÍmTI^O^SSO □ 9097250 TOSHIBA DISCRETE/OPTO 1SZ57—1SZ59 67C 09381 3 7 D Silicon Planar Type Tem perature Compensated Zener Diode INDUSTRIAL APPLICATIONS Unit in mm VOLTAGE REGULATION AND VOLTAGE STANDARD APPLICATIONS.
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1SZ57--1SZ59
1SZ59)
1SZ58
1SZ59
ZENER DIODE J3
1SZ57-1SZ59
ZENER C 3V
zener diode marking 5d
zener diode T3 Marking
zener diode mark J3
1SZ57
1SZ57 diode
diode j5d
zener diode T3
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IN4937GP
Abstract: No abstract text available
Text: 1N4933GPTHRU 1N4937GP GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere FEATURES DO-2Q4AL ♦ Plastic package has T Underwriters Laboratory « • Flammability Classification 94V-0 0 W7 2 7
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1N4933GPTHRU
1N4937GP
MIL-S-19500
1N4933GP
IN4937GP
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os 135 diode
Abstract: ZENER C 3V diode j5d W 135 Zener 1SZ57 ZENER Vr 3V 1sz58 1SZ59 toshiba marking mc toshiba lot number type
Text: W7 TOSHIBA {DIS CR ETE /OP TO} 9097250 TOSHIBA ÍmTI^O^SSO □ D I S C R E T E / O P T O 1SZ57—1SZ59 67C 09381 3 7 D Silicon Planar Type Temperature Compensated Zener Diode INDUSTRIAL APPLICATIONS Unit in m m VOLTAGE REGULATION AND VOLTAGE STANDARD APPLICATIONS.
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00ci3fll
1SZ57â
1SZ59
1SZ59)
1SZ58
--1SZ57
1SZ57
os 135 diode
ZENER C 3V
diode j5d
W 135 Zener
1SZ57
ZENER Vr 3V
1sz58
1SZ59
toshiba marking mc
toshiba lot number type
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Untitled
Abstract: No abstract text available
Text: W7 S * LU H i W fiPD41256 262,144 X 1-Bit NEC Electronics Inc. Dynamic NMOS RAM Description Pin Configurations The /xPD41256 is a 262,144-word by 1-bit dynamic RAM designed to operate from a single + 5-volt power supply and fabricated with a double polylayer, N-channel,
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fiPD41256
/xPD41256
144-word
16-Pin
pPD41256
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Untitled
Abstract: No abstract text available
Text: W7 S * P y lÆ JJ W /tPB100422 256 X 4-Bit 100K ECL RAM NEC Electronics Inc. Description Pin Configurations The jtPB100422 is a very high-speed 100K interface ECL RAM organized as 256 words by 4 bits and designed with noninverted, open-emitter outputs and low power con
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/tPB100422
jtPB100422
24-pin
256-word
400-mil,
24-pinred
pPB100422
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Untitled
Abstract: No abstract text available
Text: A dvanced W7Æ P o w e r T e c h n o lo g y APT10M19BVR ioov 75a 0.0190 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT10M19BVR
O-247
APT10M
19BVR
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S3157
Abstract: SC-40
Text: TOSHIBA -CDIS CRETE/OPTO 1 9097250 TOSHIBA W7 <DISCRETE/OPTO ¿E | ^ Gcì7SSD □DDT3cm 1 | b6 7 C J 3 9 3 9 ^ ii_ D I -r-ea-oi S3157 S ilico n E p itaxial P la n a r T y p e Diode TENTATIVE Unit In mm COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, SWITCHING APPLICATIONS.
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OI7250
S3157
SC-40
100mA
S3157
SC-40
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Untitled
Abstract: No abstract text available
Text: APT501OLVFR A dvan ced W7Æ P o w e r Te c h n o l o g y 500v 47a 0.1000 POWER MOSV FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT501OLVFR
O-264
O-264AA
MIL-STD-750
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Untitled
Abstract: No abstract text available
Text: W7&\\> MCF KSS FP3 Series • ^d lb /F e a tu re s • 'M Z (6X3.5mm ) • M M ( « £ = 1 .2mm)„ • • • • g um m • 'J 7 P - I U Compact and thin. (6x3.5x1,2mm) Excellent vibration resistance and shock resistance. Designed for automatic mounting and reflow soldering.
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F45-30A
000lio
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Untitled
Abstract: No abstract text available
Text: D1RFRD006 REVISION RECORD *3.81 * 13,8 *11.4 A\ *5.5±o.5i »16.4 A i i i i REV EH DESCRIPTION CHKD DRFT MODIFY DRAWING o* C\l CT> uo ñ D *I D ~D CM W7////////A cn CQ CO *' < LO id *1 .0 2 NDTE5: ELECTRICAL: 1. VOLTAGE RATING: 125 VAC RMS MIN. 2. CURRENT RATING: 1.5 AMP MIN.
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D1RFRD006
L94V-0.
E1B3191
5/IE/03
GE523082
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AS1210
Abstract: No abstract text available
Text: • K A dvanced W7Æ P o w er Tec h n o lo g y APT8065SVR soov i3a o.65oq POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT8065SVR
AS1210
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5121 M
Abstract: C30T03QLH C30T03QLH-11A
Text: SCHOTTKY BARRIER DIODE I0.4I.4W I 4.8C.189 4.4 .173)" . “sanœrL FEATURES O D ual D iodes - C athode Com m on •. 1.4(.055i 1.41.055) ].2(.W7> f 10.6M I7) I 9.6(.378) 10.11.398) o | SQ U A RE-PA K I TO-263AB (SMD) P a c k a g e d in 24mm T a p e a n d Reel : C30T03QLH
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C30T03QLH
C30T03QLH-11A
O-263AB
C30T03QLH
O-220:
4H09I
5121 M
C30T03QLH-11A
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