tva0300n07
Abstract: mmic amplifier marking code N10 MTVA0300N05 PST-02-A-1 TVA0300N07W3 electronic passive components catalog SC-1016 MTVA0300 SMT2010TALN 42TVA
Text: EMC TECHNOLOGY Custom Engineered Solutions 8851 SW Old Kansas Ave. 772 286-9300 ISO 9001 & 14001 Certified M I C R OWAV E C O M P O N E N T S www.emct.com Resistive Products, Smart Loads , High Reliability Stuart, FL 34997 (800) 544-5594 Thermopads®, Equalizers,
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BVU-5M5WI5
Abstract: No abstract text available
Text: BRIGHT VIEW ULTRA BRIGHTNESS LED LAMP ELECTRONICS CO.,LTD BVU-5M5WI5 PACKAGE CONFIGURATION DESCRIPTION 5.9 Dice Material : GaN Blue Light Color : White Color 5.9 5.0 4.9 Lens Color : Water Transparent Stand-Off P/N : BVU-5M5WI5 R RADIATION PATTERN 0° -30°
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1000pcs
500pcs
000pcs
BVU-5M5WI5
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MRF896
Abstract: 1N4001 Motorola
Text: MOTOROLA Order this document by MRF896/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors MRF896 Designed for 24 Volt UHF large–signal, common emitter, Class AB and Class A linear amplifier applications in industrial and commercial FM/AM equipment
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MRF896/D
MRF896
MRF896/D*
MRF896
1N4001 Motorola
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MICRON diode 2u
Abstract: 24256 WR1 marking code marking WB4 MARKING WB1 micron power resistor Micron DDR marking H12 43256 1/transistor BL P65 diode marking code 4n
Text: ADVANCE‡ 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 banks MT49H16M16 – 2 Meg x 16 x 8 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES
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256Mb:
MT49H8M32
MT49H16M16
144-Ball
MT49H8M32
MICRON diode 2u
24256
WR1 marking code
marking WB4
MARKING WB1
micron power resistor
Micron DDR marking H12
43256
1/transistor BL P65
diode marking code 4n
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smd diode schottky code marking 2U
Abstract: smd wb3 smd diode marking codes 2U smd marking WB3 smd wb1 smd diode schottky code marking 2F smd diode wb1 marking 3U 3T 3C diode wb3 smd code SMD marking CODE 2U
Text: ADVANCE‡ 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 banks MT49H16M16 – 2 Meg x 16 x 8 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES
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256Mb:
MT49H8M32
MT49H16M16
144-Ball
MT49H8M32
smd diode schottky code marking 2U
smd wb3
smd diode marking codes 2U
smd marking WB3
smd wb1
smd diode schottky code marking 2F
smd diode wb1
marking 3U 3T 3C diode
wb3 smd code
SMD marking CODE 2U
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DSA0010009.txt
Abstract: No abstract text available
Text: BRIGHT VIEW ELECTRONICS CO.,LTD SUPER FLUX LED BVZ-925WI4 PACKAGE CONFIGURATION CATHODE DESCRIPTION 7.62 0.5 Dice Material : GaN Blue Light Color : White Color Lens Color : Water Transparent ANODE 7.62 0.5 RADIATION PATTERN R9.4 100 3.50 0.5 75 2.5 5.4 50
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BVZ-925WI4
60PCS
000PCS
DSA0010009.txt
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Untitled
Abstract: No abstract text available
Text: BRIGHT VIEW ELECTRONICS CO.,LTD ULTRA BRIGHTNESS LED LAMP BVU-5A6WI5 PACKAGE CONFIGURATION DESCRIPTION 5.9 Dice Material : GaN Blue Light Color : White Color Lens Color : Water Transparent Stand-Off P/N : BVU-5A6WI5 R 5.9 5.0 4.9 RADIATION PATTERN 7.6 12.0 0.5
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500pcs
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BVU-5M5WI4R
Abstract: 5M5W
Text: BRIGHT VIEW ELECTRONICS CO.,LTD ULTRA BRIGHTNESS LED LAMP BVU-5M5WI4 PACKAGE CONFIGURATION DESCRIPTION Dice Material : GaN Blue Light Color : White Color 5.9 Lens Color : Water Transparent Stand-Off P/N : BVU-5M5WI4 R 5.0 4.9 RADIATION PATTERN 0° -30° 5.9
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1000pcs
500pcs
000pcs
BVU-5M5WI4R
5M5W
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Untitled
Abstract: No abstract text available
Text: BRIGHT VIEW ELECTRONICS CO.,LTD ULTRA BRIGHTNESS LED LAMP BVU-3X16WI4 PACKAGE CONFIGURATION DESCRIPTION Dice Material : GaN Blue Light Color : White Color 3.2 3.2 Lens Color : Water Transparent Stand-Off P/N : BVU-3X16WI4 R 3.2 3.0 3.5 RADIATION PATTERN 0°
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BVU-3X16WI4
BVU-3X16WI4
10de-refer
1000pcs
500pcs
000pcs
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3K0WI4
Abstract: LED 2180 mcd
Text: BRIGHT VIEW ELECTRONICS CO.,LTD ULTRA BRIGHTNESS LED LAMP BVU-3K0WI4 PACKAGE CONFIGURATION DESCRIPTION Dice Material : GaN Blue Light Color : White Color Lens Color : Water Transparent Stand-Off P/N : BVU-3K0WI4 R RADIATION PATTERN 0° -30° 30° -60° 60°
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500pcs
000pcs
3K0WI4
LED 2180 mcd
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capacitor 100nf 63v
Abstract: HiQuad package 120v relay driver Tj160 ETR80 SM5908 SM6T68A STLC5445 HIQUAD64 ST d1647
Text: STLC5445 QUAD LINE FEED CONTROLLER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ BATTERY VOLTAGE UP TO 120V SUPPLIES POWER FOR UP TO FOUR DIGITAL TELEPHONE LINES PROGRAMMABLE CURRENT LIMITING LONGITUDINAL CURRENT CANCELLATION ETSI ETR80 COMPLIANT OUTPUT CURRENT UP TO 140 mA
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STLC5445
ETR80
capacitor 100nf 63v
HiQuad package
120v relay driver
Tj160
SM5908
SM6T68A
STLC5445
HIQUAD64 ST
d1647
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capacitor 100nf 63v
Abstract: HiQuad package SM5908 equivalent HiQuad-64 HiQUAD-64 st HIQUAD64
Text: STLC5445 QUAD LINE FEED CONTROLLER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ BATTERY VOLTAGE UP TO 120V SUPPLIES POWER FOR UP TO FOUR DIGITAL TELEPHONE LINES PROGRAMMABLE CURRENT LIMITING LONGITUDINAL CURRENT CANCELLATION ETSI ETR80 COMPLIANT OUTPUT CURRENT UP TO 140 mA
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STLC5445
ETR80
HiQUAD-64
capacitor 100nf 63v
HiQuad package
SM5908 equivalent
HiQUAD-64 st
HIQUAD64
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WIMA FKP1 C6
Abstract: RC20G RC20GF Osram ballast schematic
Text: UM10359 UBA2016AT HFTL demo board with boost and dimming Rev. 1.1 — 1 July 2011 User manual Document information Info Content Keywords UBA2016AT, ballast, 28 W 2D lamp, dimming, boost Abstract This User manual describes a demonstration demo board using the
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UM10359
UBA2016AT
UBA2016AT,
WIMA FKP1 C6
RC20G
RC20GF
Osram ballast schematic
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HiQuad
Abstract: capacitor 100nf 63v 120v relay pin mark code WB1 Tj160 HiQUAD-64 st 5V 20mA 4 pin Relay SM5908 HiQuad package j130
Text: STLC5445 QUAD LINE FEED CONTROLLER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ BATTERY VOLTAGE UP TO 120V SUPPLIES POWER FOR UP TO FOUR DIGITAL TELEPHONE LINES PROGRAMMABLE CURRENT LIMITING LONGITUDINAL CURRENT CANCELLATION ETSI ETR80 COMPLIANT OUTPUT CURRENT UP TO 140 mA
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STLC5445
ETR80
HiQuad
capacitor 100nf 63v
120v relay pin
mark code WB1
Tj160
HiQUAD-64 st
5V 20mA 4 pin Relay
SM5908
HiQuad package
j130
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preamp 12 to 15 ghz
Abstract: diode wb4 transimpedance amplifier 10 GHz transimpedance amplifier 7.5 GHz diode wb2 diode wb7 diode wb3 nortel optical receiver
Text: D68 10 Gb/s Transimpedance Amplifier Data Sheet Features Operates at OC-192/STM-64 data rates up to 12.5 Gb/s NRZ Interfaces with PIN or APD photodetectors Non-inverting operation into 50 Ω output load Single +8 V power supply Small size: 1.1 mm x 0.95 mm
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OC-192/STM-64
preamp 12 to 15 ghz
diode wb4
transimpedance amplifier 10 GHz
transimpedance amplifier 7.5 GHz
diode wb2
diode wb7
diode wb3
nortel optical receiver
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philips cfl 18W
Abstract: DULUX OSRAM cfl schematic ballast T5 13W bridge rectifier using the diode 1N4007 diode wb1 10n 500V capacitor 18w cfl circuit Essential general electric cfl transistor ballast cfl circuit diagram - T5, 13W
Text: UM10416 UBA2024BP/BT 25 W demo boards Rev. 1 — 15 November 2010 User manual Document information Info Content Keywords UBA2024BP, UBA2024BT, half-bridge CFL driver, non-dimmable Abstract This document describes the correct use of the UBA2024BP and UBA2024BT
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UM10416
UBA2024BP/BT
UBA2024BP,
UBA2024BT,
UBA2024BP
UBA2024BT
philips cfl 18W
DULUX
OSRAM cfl
schematic ballast T5 13W
bridge rectifier using the diode 1N4007
diode wb1
10n 500V capacitor
18w cfl circuit Essential
general electric cfl transistor ballast
cfl circuit diagram - T5, 13W
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HiQuad package
Abstract: SM5908 HIQUAD64 120v relay driver ETR80 Tj160 LCP1521 SM6T68A STLC5445 capacitor 100Nf 63V
Text: STLC5445 QUAD LINE FEED CONTROLLER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ BATTERY VOLTAGE UP TO 120V SUPPLIES POWER FOR UP TO FOUR DIGITAL TELEPHONE LINES PROGRAMMABLE CURRENT LIMITING LONGITUDINAL CURRENT CANCELLATION ETSI ETR80 COMPLIANT OUTPUT CURRENT UP TO 140 mA
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STLC5445
ETR80
HiQuad package
SM5908
HIQUAD64
120v relay driver
Tj160
LCP1521
SM6T68A
STLC5445
capacitor 100Nf 63V
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Non-isolated Buck LED Driver IC
Abstract: UM10874 dimmable LED driver
Text: UM10874 SSL5231BDB1289 120 V 18 W dimmable buck non-isolated LED driver Rev. 1 — 23 April 2015 User manual Document information Info Content Keywords SSL5231BDB1289, SSL5231BT, dimmable, LED driver, buck converter, fixture, eco-THD Abstract This user manual describes the operation of the SSL5231BDB1289 120 V
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UM10874
SSL5231BDB1289
SSL5231BDB1289,
SSL5231BT,
SSL5231BT.
Non-isolated Buck LED Driver IC
UM10874
dimmable LED driver
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power transistor audio amplifier 500 watts circuit diagram
Abstract: c 5030 fo 150 watts power amplifier layout 10w audio amplifier circuit diagram layout down 100 watts IC audio amplifier circuit diagram 500 watts amplifier schematic diagram pcb layout LM1875 LM1875T equivalent national semiconductor audio power amplifier ic d transistor D 5030
Text: LM1875 20W Audio Power Amplifier General Description Features The LM1875 is a monolithic power amplifier offering very low distortion and high quality performance for consumer audio applications The LM1875 delivers 20 watts into a 4X or 8X load on g 25V supplies Using an 8X load and g 30V supplies over
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LM1875
20-3A
power transistor audio amplifier 500 watts circuit diagram
c 5030 fo
150 watts power amplifier layout
10w audio amplifier circuit diagram layout down
100 watts IC audio amplifier circuit diagram
500 watts amplifier schematic diagram pcb layout
LM1875T equivalent
national semiconductor audio power amplifier ic d
transistor D 5030
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diode wb1
Abstract: MRF896S WB1 DIODE diode wb2 1n4001 motorola ECEV1HV100R
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F896 M R F896S The RF Line NPN S ilico n RF P o w er T ran sisto rs Motorola Prafanwl DavlcM Designed for 24 Volt UHF large-signal, common emitter, Class AB and Class A linear am plifier applications in industrial and commercial FM/AM equipment
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MRF896
MRF896S
diode wb1
WB1 DIODE
diode wb2
1n4001 motorola
ECEV1HV100R
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transistor N100
Abstract: No abstract text available
Text: C T S G S - T H O M S O N ^ 7 # . HD»HLI TO s lfSlD(gi BYW 100-50 ->200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT ■ THE SPECIFICATIONS AND CURVES ENABLE
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AT100
transistor N100
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG100J6ES50 TOSHIBA GTR MODULE M G 1 Q Q SILICON N CHANNEL IGBT J6ES50 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm 4-05.5± O ,3 MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • High Input Impedance, • 6 IGBTs Built Into 1 Package.
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MG100J6ES50
J6ES50
2-94A2A
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on semiconductor 50-5G
Abstract: No abstract text available
Text: TOSHIBA M G50J6ES50 TOSHIBA GTR MODULE m n SILICON N CHANNEL IGBT i f i F <; ç n HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. High Input Impedance, 6 IGBTs Built Into 1 Package. Enhancement-Mode.
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G50J6ES50
on semiconductor 50-5G
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INA117KP
Abstract: No abstract text available
Text: BURR-BROUN CORP 22E D • 17313bS QGlbSDG G ■ INA117 B U R R -B R O W N « I B O I Precision High Common-Mode Voltage Unity-Gain DIFFERENTIAL AMPLIFIER FEATURES APPLICATIONS • HIGH COMMON-MODE RANGE: ±200VDC OR ACpk, continuous • UNITY GAIN: 0.02% GAIN ERROR, max
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17313bS
INA117
200VDC
T0-99
INA117
/380k
INA117KP
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