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    WDFN6 Price and Stock

    onsemi STR-NCP164A-WDFN6-GEVB

    EVAL BOARD FOR NCP164A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STR-NCP164A-WDFN6-GEVB Box 1
    • 1 $204.1
    • 10 $204.1
    • 100 $204.1
    • 1000 $204.1
    • 10000 $204.1
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    Avnet Americas STR-NCP164A-WDFN6-GEVB Bulk 4
    • 1 -
    • 10 $194.38405
    • 100 $181.42511
    • 1000 $181.42511
    • 10000 $181.42511
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    Newark STR-NCP164A-WDFN6-GEVB Bulk 1
    • 1 $233.5
    • 10 $226.97
    • 100 $213.9
    • 1000 $213.9
    • 10000 $213.9
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    Onlinecomponents.com STR-NCP164A-WDFN6-GEVB
    • 1 $220.65
    • 10 $201.58
    • 100 $201.58
    • 1000 $201.58
    • 10000 $201.58
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    Avnet Silica STR-NCP164A-WDFN6-GEVB 53 Weeks 1
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    WDFN6 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6, 2x2 CASE 506AZ−01 ISSUE A DATE 25 APR 2006 SCALE 4:1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM


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    506AZ-01 506AZ PDF

    SC-70-6 package

    Abstract: ladder network thermal 506AN 2x2 dfn c 1383 QFN 10 2x2 footprint 6pin 2x2 dfn J1F3 QFN PACKAGE Junction to PCB thermal resistance
    Text: AND8345/D WDFN6 2x2 mCoolt 506AN Dual MOSFET Package Board Level Application Notes and Thermal Performance http://onsemi.com Prepared by: Anthony M. Volpe ON Semiconductor APPLICATION NOTE Introduction Figure 3 depicts a minimum recommended pad pattern that confines an improved thermal area of drain connections


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    AND8345/D 506AN SC-70-6 package ladder network thermal 506AN 2x2 dfn c 1383 QFN 10 2x2 footprint 6pin 2x2 dfn J1F3 QFN PACKAGE Junction to PCB thermal resistance PDF

    mosfet rqa 130

    Abstract: 6pin 2x2 dfn 506AP 2x2 dfn wdfn6 ladder network thermal
    Text: AND8380/D WDFN6 2x2 mCool] 506AP Single MOSFET Package Board Level Application Notes and Thermal Performance http://onsemi.com APPLICATION NOTE Prepared by: Anthony M. Volpe ON Semiconductor Introduction the contact area of the exposed source to include Pin 4


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    AND8380/D 506AP 506AP mosfet rqa 130 6pin 2x2 dfn 2x2 dfn wdfn6 ladder network thermal PDF

    E2 liu

    Abstract: wdfn6 506AN
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 2x2, 0.65P CASE 506AN−01 ISSUE E DATE 20 AUG 2010 SCALE 4:1 D PIN ONE REFERENCE 0.10 C 0.10 C PLATING ÍÍ ÍÍ ÍÍ NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS.


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    506AN-01 506AN E2 liu wdfn6 506AN PDF

    microdot Application Note

    Abstract: marking 2x marking L2 diode marquis microdot 511bj marking L2 15x15
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 1.5x1.5, 0.5P CASE 511BJ−01 ISSUE B DATE 06 JUL 2010 SCALE 4:1 D L A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED


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    511BJ-01 511BJ microdot Application Note marking 2x marking L2 diode marquis microdot 511bj marking L2 15x15 PDF

    marking code EE

    Abstract: No abstract text available
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 1.2x1.0, 0.4P CASE 506AS−01 ISSUE C DATE 30 JUN 2008 SCALE 4:1 D L A B L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED


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    506AS-01 506AS marking code EE PDF

    506AP

    Abstract: No abstract text available
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 2x2 CASE 506AP−01 ISSUE B DATE 26 APR 2006 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM


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    506AP-01 506AP 506AP PDF

    NCP700BSN18T1G

    Abstract: NCP700BSN30T1G transistor tip 3005 marking ADQ NCP700bsn33t1g
    Text: NCP700B 200 mA, Ultra Low Noise, High PSRR, BiCMOS RF LDO Regulator Noise sensitive RF applications such as Power Amplifiers in cell phones and precision instrumentation require very clean power supplies. The NCP700B is 200 mA LDO that provides the engineer


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    NCP700B NCP700B/D NCP700BSN18T1G NCP700BSN30T1G transistor tip 3005 marking ADQ NCP700bsn33t1g PDF

    Untitled

    Abstract: No abstract text available
    Text: CAT6242 1.3 Amp CMOS LDO Voltage Regulator Description The CAT6242 is a low dropout CMOS voltage regulator providing up to 1300 mA of output current with fast response to load current and line voltage changes. CAT6242 has a fixed output voltage that is factory programmable to a level between 1.1 V and 4.1 V with steps of


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    CAT6242 CAT6242 511AP CAT6242/D PDF

    NTLJD3119CTAG

    Abstract: NTLJD3119C NTLJD3119CTBG
    Text: NTLJD3119C Power MOSFET 20 V/−20 V, 4.6 A/−4.1 A, mCoolt Complementary, 2x2 mm, WDFN Package Features • Complementary N−Channel and P−Channel MOSFET • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • Conduction Footprint Same as SC−88 Package


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    NTLJD3119C SC-88 NTLJD3119C/D NTLJD3119CTAG NTLJD3119C NTLJD3119CTBG PDF

    506AP

    Abstract: NTLJS3113P NTLJS3113PT1G
    Text: NTLJS3113P Power MOSFET −20 V, −7.7 A, mCoolt Single P−Channel, 2x2 mm, WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • Conduction 2x2 mm Footprint Same as SC−88 Package Lowest RDS on Solution in 2x2 mm Package


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    NTLJS3113P SC-88 NTLJS3113P/D 506AP NTLJS3113P NTLJS3113PT1G PDF

    506AP

    Abstract: tl 72 oz NTLJS1102PTAG NTLJS1102PTBG
    Text: NTLJS1102P Power MOSFET −8 V, −8.1 A, mCOOL] Single P−Channel, 2x2 mm, WDFN package Features • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • • Conduction Lowest RDS on in 2 x 2 mm Package 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate


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    NTLJS1102P SC-88 NTLJS1102P/D 506AP tl 72 oz NTLJS1102PTAG NTLJS1102PTBG PDF

    Untitled

    Abstract: No abstract text available
    Text: NCV8705 500 mA, Ultra-Low Quiescent Current, IQ 13 mA, Ultra-Low Noise, LDO Voltage Regulator The NCV8705 is a low noise, low power consumption and low dropout Linear Voltage Regulator. With its excellent noise and PSRR specifications, the device is ideal for use in products utilizing RF


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    NCV8705 NCV8705 NCV8705/D PDF

    Untitled

    Abstract: No abstract text available
    Text: RT9013 Preliminary 500mA, Low Dropout, Low Noise Ultra-Fast Without Bypass Capacitor CMOS LDO Regulator General Description The RT9013 is a high-performance, 500mA LDO regulator, offering extremely high PSRR and ultra-low dropout. Ideal for portable RF and wireless applications with demanding


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    RT9013 500mA, RT9013 500mA DS9013-04 PDF

    Untitled

    Abstract: No abstract text available
    Text: RT9198 300mA, Low Noise, Ultra-Fast CMOS LDO Regulator General Description Features The RT9198 is designed for portable RF and wireless applications with demanding performance and space requirements. The RT9198 performance is optimized for battery-powered systems to deliver ultra low noise and


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    RT9198 300mA, RT9198 DS9198-09 PDF

    Untitled

    Abstract: No abstract text available
    Text: RT9013 500mA, Low Dropout, Low Noise Ultra-Fast Without Bypass Capacitor CMOS LDO Regulator General Description The RT9013 is a high-performance, 500mA LDO regulator, offering extremely high PSRR and ultra-low dropout. Ideal for portable RF and wireless applications with demanding


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    RT9013 500mA, RT9013 500mA DS9013-06 PDF

    Untitled

    Abstract: No abstract text available
    Text: RT9728A 120mΩ Ω, 1.3A Power Switch with Programmable Current Limit General Description Features The RT9728A is a cost effective, low voltage, single P-MOSFET high side power switch IC for USB application with a programmable current limit feature. Low switch-on


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    RT9728A RT9728A DS9728A-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: NCV8705 500 mA, Ultra-Low Quiescent Current, IQ 13 mA, Ultra-Low Noise, LDO Voltage Regulator The NCV8705 is a low noise, low power consumption and low dropout Linear Voltage Regulator. With its excellent noise and PSRR specifications, the device is ideal for use in products utilizing RF


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    NCV8705 NCV8705 NCV8705/D PDF

    NIS1050MNTBG

    Abstract: NIS1050 6x fet
    Text: NIS1050 Protection Interface Circuit for PMICs with Integrated OVP Control The NIS1050 is a protection IC targeted at the latest generation of PMICs from the leading mobile phone and UMPC chipset vendors. It includes a highly stable low-current LDO and a low impedance power


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    NIS1050 NIS1050 NIS1050/D NIS1050MNTBG 6x fet PDF

    Thx201

    Abstract: OB2268 OB2262 PA3004 dvd player smps SG6848 SG6841 ld7552 cross reference ob2278 sot-26 pwm controller
    Text: Orister Products Quick Reference Update:2007/9/10 Family Linear Regulators Part No. Package RS1117 SOT-223 TO-252 SOT-89 RS9173 PSOP-8 RS9172 PSOP-8 RS7805 TO-252 TO-220 RS78L05 SOT-89 TO-92 RS431 SOT-23 TO-92 RS6513 SOP-8 DIP-8 AX1509 SOP-8 DIP-8 AX2596


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    Update2007/9/10 RS1117 RS9173 RS9172 RS7805 O-252 O-220 RS78L05 OT-89 RS431 Thx201 OB2268 OB2262 PA3004 dvd player smps SG6848 SG6841 ld7552 cross reference ob2278 sot-26 pwm controller PDF

    marking code d5g

    Abstract: SOT-353 MARKING vn NCP508SQ15T1G NCP508MT15TBG
    Text: NCP508 Very Low Noise, Fast Turn On, 50 mA Low Dropout Voltage Regulator Very Low Noise at 39 mVrms without a Bypass Capacitor High Ripple Rejection of 70 dB at 1 kHz Low Dropout Voltage of 140 mV typ at 30 mA Tight Load Regulation, typically 6 mV for DIout = 50 mA


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    NCP508 SC70-5/SC-88A/SOT-353 NCP508/D marking code d5g SOT-353 MARKING vn NCP508SQ15T1G NCP508MT15TBG PDF

    Untitled

    Abstract: No abstract text available
    Text: EMI2180 Common Mode Filter with ESD Protection Functional Description The EMI2180 is an industry first Common Mode Filter tuned to MHL speed CMF with integrated ESD protection. Differential signaling I/Os can now have both common mode filtering and ESD protection in one package, instead of using separate devices for each


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    EMI2180 EMI2180 IEC61000â EMI2180/D PDF

    NLAS5123

    Abstract: NLAS5123MNR2G NLAS5123MUR2G
    Text: NLAS5123 SPDT, 1 W RON Switch The NLAS5123 is a low RON SPDT analog switch. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS5123 can handle a balanced microphone/


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    NLAS5123 NLAS5123 506AS NLAS5123/D NLAS5123MNR2G NLAS5123MUR2G PDF

    Untitled

    Abstract: No abstract text available
    Text: NTLJD3181PZ Power MOSFET −20 V, −4.0 A, mCoolt Dual P−Channel, ESD, 2x2 mm WDFN Package Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent • • • • • Thermal Conduction Lowest RDS on Solution in 2x2 mm Package Footprint Same as SC−88 Package


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    NTLJD3181PZ NTLJD3181PZ/D PDF