SBAA094
Abstract: sinc3 vhdl code iir filter in vhdl pulse shaping FILTER implementation xilinx xilinx code fir filter in vhdl VHDL for decimation filter digital filter sinc filter xilinx FPGA IIR Filter it is possible to summarize the results for a Sinc3 filter and sinc3
Text: Application Report SBAA094 – June 2003 Combining the ADS1202 with an FPGA Digital Filter for Current Measurement in Motor Control Applications Miroslav Oljaca, Tom Hendrick Data Acquisition Products ABSTRACT The ADS1202 is a precision, 80dB dynamic range, delta-sigma ∆Σ modulator operating
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SBAA094
ADS1202
15-bit
SBAA094
sinc3 vhdl
code iir filter in vhdl
pulse shaping FILTER implementation xilinx
xilinx code fir filter in vhdl
VHDL for decimation filter
digital filter sinc filter
xilinx FPGA IIR Filter
it is possible to summarize the results for a Sinc3 filter and
sinc3
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BUK856-400IZ
Abstract: DD30 T0220AB ignition coil IGBT CL-8A
Text: N AMER PHILIPS/DISCRETE b^E D • bbS3T31 0030^05 S3T H A P X Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor BUK856-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA
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bbS3T31
BUK856-400IZ
T0220AB
DD30
ignition coil IGBT
CL-8A
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Untitled
Abstract: No abstract text available
Text: PD - 9.1600 International I R Rectifyler IRG4BC20K PR ELIM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc = 1 0 jjs, @ 360V V CE start , T j= 1 2 5 ° C ,
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IRG4BC20K
SS45S
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X28C256MB
Abstract: X28C256M
Text: 1ÜEK DATA SHEET SUPPLEMENT 256K Mil-Std-883C X28C256MB 32K x 8 Bit Electrically Erasable PROM REQUIREMENTS FOR CHIP ERASE CHIP ERASE FUNCTIONALITY WILL BE GUARANTEED VIA C-SPEC ONLY. ADD C6767 TO XICOR PART NUMBER WHEN ORDERING. DESCRIPTION The voltage is sensed as being greater than Vih and in
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X28C256MB
Mil-Std-883C
C6767
X28C256MB
X28C256M
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WE VQE 24 E
Abstract: WE VQE 11 E WE VQE 24
Text: International IGR Rectifier PD - 9.1578 IRG4PH40K PRELIMINARY Short Circuit Rated _ UltraFast IGBT INSUIATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tgc =10 js, 0 36 0V VCE (start , T j = 125°C, VSE = 15V
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IRG4PH40K
WE VQE 24 E
WE VQE 11 E
WE VQE 24
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BA 4213
Abstract: transistor k 4213 diode rj 93
Text: 7 2 9 4 6 2 1' PO WE R EX IN C m u m n ex Tf l DE§ 7 2 ^ 5 1 D0D2377 1 f~ ’ ' d T ^ 3 3 ' ;3 5 ’" KT521K03 Powerex, Inc., M ills Street, Ybungwood, Pennsylvania 15697 412 925-7272 Split-Dual Darlington Transistor Module 30 Am peres/1000. Volts Description
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D0D2377
KT521K03
peres/1000.
Amperes/1000
-261C
BA 4213
transistor k 4213
diode rj 93
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Untitled
Abstract: No abstract text available
Text: 2 International I R Rectifier PD - 9.1578A IRG4PH40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • High short circuit rating optimized for motor control, t*. =10ps, VCC = 720V , T j = 125°C, VGe =15V • Combines low conduction losses with high
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IRG4PH40K
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WE VQE 23 F
Abstract: WE VQE 23 E WE VQE 11 E 1RG4BC30K-S
Text: International IöR Rectifier PD - 9.1619A 1RG4BC30K-S PRELIMINARY Short Circuit Rated _ UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc=10MS, @360V VCE start , T j = 125°C,
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1RG4BC30K-S
generati08
WE VQE 23 F
WE VQE 23 E
WE VQE 11 E
1RG4BC30K-S
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EE-SJ3-B
Abstract: JN-05 EE-SJ3B
Text: omRon EE-SY310/410/ 313/413 Photomicrosensor Photomicrosensor with Built-In, Single-chip Photoampiifier a Compact, lightweight modei wiin a single chip that incorporates a receiver and amplifier circuit. s Circuit integrated into moidea housing. • Receiver with an incorporated temperature com
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EE-SY310/410/
EE-SY310)
EE-SY410)
EE-SY313/
-SY413)
EE-SJ3-B
JN-05
EE-SJ3B
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UEI 20 SP 010
Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Text: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"
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64-KBit-Sehreib--Iese-Speicher
086/11/B9
UEI 20 SP 010
Datenblattsammlung
u82720
mikroelektronik datenblattsammlung
VEB mikroelektronik
UB8820M
"halbleiterwerk frankfurt"
UEI 15 SP 020
Aktive elektronische Bauelemente 1988 Teil 2
B4207D
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Transistor BC 227
Abstract: No abstract text available
Text: PD-9.1620 International I R Rectifier IRG4 BC 2 0 K-S prelim inary Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =1 Ops, @360V VCE start , T j = 125°C, V ge = 15V
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554S2
Transistor BC 227
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transistor iqr
Abstract: No abstract text available
Text: International IGR Recti fi'ier PD - 9.1600 IRG4BC20K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tjc =10|js, @360V VCE start , T j = 125°C, VGE= 15V
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IRG4BC20K
transistor iqr
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BUJ103AX
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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BUJ103AX
BUJ103AX
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Untitled
Abstract: No abstract text available
Text: Si GEC PLESS EY SEMICONDUCTORS DS4137-6.2 GP400LSS12S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS • High P ow er Switching. ■ M otor Control. TYPICAL KEY PARAMETERS VCES 1200V V c E ,a„ ^c(cont> ■ U P S. ■ A C And D C Servo Drive Amplifiers. 'c p k ,
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DS4137-6
GP400LSS12S
190ns
840ns
44lbs
70lbs
88lbs
18lbs
1500g
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Untitled
Abstract: No abstract text available
Text: 4K Military X2804AM 512x8 Bit _ Electrically Erasable PROM FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data —Internally Latched Address and Data
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X2804AM
512x8
X2804A
MilStd-B83C
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ECJF
Abstract: No abstract text available
Text: International IOR Rectifier P D - 9.1602 IRG4BC20F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLARTRANSISTOR Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4BC20F
O-220AB
ECJF
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Buf725d
Abstract: transistor BUF725D
Text: T e m ic BUF725D Semiconductors Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • • Monolithic integrated C-E-free-wheel diode Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate
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BUF725D
D-74025
18-Jul-97
Buf725d
transistor BUF725D
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LC35256A
Abstract: LC35256AM LC35256AS 5K4916
Text: Ordering number : EN%S4916 CMOS LSI LC35256A, AS, AM-70/85/10 No. 5K4916 S A \Y O 256K 32768 words x 8 bits SRAM with OE and CE Control Pins Preliminary Overview The LC35256A, AS, and AM are 32768 words x 8-biis asynchronous silicon gate CMOS SRAMs. These products
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S4916
5K4916
LC35256A,
AM-70/85/10
LC35256A
0D1535E
LC35256AM
LC35256AS
5K4916
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AT-10
Abstract: LC35256A LC35256AM LC35256AS LC35256AT
Text: Ordering number : EN4916A CMOS LSI LC35256A, AS, AM, AT-70/85/10 No 4916A SAmYO i 256K 32768 words x 8 bits SRAM with OE and CE Control Pins Overview • 28 -pin T S O P (8 x 13.4mm) p lastic packag e: L C 3 5 2 5 6 A T T h e L C 3 5 2 5 6 A , A S , A M , a n d A T a re 3 2 7 6 8 w o r d s x
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EN4916A
LC35256A,
AT-70/85/10
LC35256A
AT-10
LC35256AM
LC35256AS
LC35256AT
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FAIRCHILD 3904
Abstract: No abstract text available
Text: O ctober 1987 Revised Ja nuary 1999 SEMICONDUCTOR!!^ MM74C912 6-Digit BCD Display Controller/Driver General Description T h e M M 74C 912 display controllers are interface elem ents, w ith m emory, th a t drive a 6-digit, 8-segm ent LED display. The display controllers receive data inform ation through 5
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MM74C912
FAIRCHILD 3904
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transistor RJH 30
Abstract: LM391N 90 LM391 equivalent LM391N equivalent 12 volts 50 watt stereo amplifier schematic diagram LM391N-100 LM391 LM391N MJE171 NATIONAL SEMICONDUCTOR 240SA
Text: N a tio n a l LM391 & Semiconductor LM391 Audio Power Driver General Description Features The LM391 audio power driver is designed to drive external power transistors in 10 to 100 watt power amplifier designs. High power supply voltage operation and true high fidelity
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LM391
LM391N;
TL/H/7146-13
b50ii24
transistor RJH 30
LM391N 90
LM391 equivalent
LM391N equivalent
12 volts 50 watt stereo amplifier schematic diagram
LM391N-100
LM391N
MJE171 NATIONAL SEMICONDUCTOR
240SA
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KA-40W
Abstract: LM391 equivalent LM391N 90 SMT TRANSISTOR 5D IC LM391 LM391N equivalent MJE171 NATIONAL SEMICONDUCTOR DIODE h4b LM391N-100 LM391N
Text: & National Semiconductor LM391 Audio Power Driver General Description Features The LM391 audio power driver is designed to drive external power transistors in 10 to 100 watt power amplifier designs. High power supply voltage operation and true high fidelity
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LM391
0W-81Ì
0W-41Ì
TL/H/7146-13
LM391N;
b501124
KA-40W
LM391 equivalent
LM391N 90
SMT TRANSISTOR 5D
IC LM391
LM391N equivalent
MJE171 NATIONAL SEMICONDUCTOR
DIODE h4b
LM391N-100
LM391N
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kd smd transistor
Abstract: smd transistor wc LG Philips LM 300 W 01
Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level Insulated gate bipolar power transistor In a plastic envelope
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BUK866-400
kd smd transistor
smd transistor wc
LG Philips LM 300 W 01
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1.8 degree bipolar stepper motor
Abstract: No abstract text available
Text: High Performance Dual PWM Microstepping Controller Type Package Temperature Range IXMS150 PSI 24-Pin Skinny DIP -40°C to +85°C racy, the IXMS150 will allow a designer to implement a control system with a resolution in excess of 250 microsteps per step, or 50,000 steps per revolution
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IXMS150
24-Pin
4bfib22b
1.8 degree bipolar stepper motor
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