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    WG S 35 Search Results

    WG S 35 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74AC11086D Texas Instruments Quadruple 2-Input Exclusive-OR Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11244DW Texas Instruments Octal Buffers/Drivers 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11245DW Texas Instruments Octal Bus Transceivers 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC16244DGGR Texas Instruments 16-Bit Buffers And Line Drivers With 3-State Outputs 48-TSSOP -40 to 85 Visit Texas Instruments Buy
    74ACT11000DR Texas Instruments Quadruple 2-Input Positive-NAND Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy
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    WG S 35 Price and Stock

    Texas Instruments ISO35DWR

    Digital Isolators Iso 3.3V Full & Half Duplex RS-485 Xcvr
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ISO35DWR 6,436
    • 1 $7.02
    • 10 $5.5
    • 100 $4.52
    • 1000 $3.9
    • 10000 $3.5
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    Texas Instruments TPS7350QPWR

    LDO Voltage Regulators Lowest Dropout PMOS
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    Mouser Electronics TPS7350QPWR 1,900
    • 1 $3.9
    • 10 $3.5
    • 100 $2.87
    • 1000 $2.16
    • 10000 $1.83
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    Intel Corporation 82635DSAWGPRQ

    Cameras & Camera Modules Real Sense Depth Module D430
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    Mouser Electronics 82635DSAWGPRQ 1,024
    • 1 $130.17
    • 10 $130.17
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    • 1000 $130.17
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    Texas Instruments SN65LVDS352PW

    LVDS Interface IC Quad LVDS Receiver
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    Mouser Electronics SN65LVDS352PW 208
    • 1 $6.14
    • 10 $5.55
    • 100 $5.3
    • 1000 $3.9
    • 10000 $3.9
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    Texas Instruments TPS2350PW

    Hot Swap Voltage Controllers Pwr Mngr for Redund -48V Supplies
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    Mouser Electronics TPS2350PW 95
    • 1 $4.32
    • 10 $3.44
    • 100 $2.84
    • 1000 $2.77
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    Find more WG S 35 price and stock on Findchips.com

    WG S 35 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KP 2010

    Abstract: M38039G8H-XXXHP
    Text: 3803H Group QzROM version Standard Characteristics Standard Characteristics Example Standard characteristics described below are just examples of the 3803H Group(QzROM version)'s characteristics and are not guaranteed.


    Original     		PDF 3803H M38039G4H-XXXHP/KP M38039G6H-XXXHP/KP M38039G8H-XXXHP/KP M38039GCH-XXXHP/KP/WG M38039G4HSP/HP/KP M38039G6HSP/HP/KP M38039G8HSP/HP/KP M38039GCHSP/HP/KP/WG KP 2010 M38039G8H-XXXHP

    5570

    Abstract: C10535E NE34018 NE34018-T1 NE34018-T2 VP15-00-3 4069 NOT GATE IC nec 4308 IC GA-08
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure: NF = 0.6 dB TYP. @ f = 2 GHz • High associated gain: Ga = 16 dB TYP. @ f = 2 GHz • Gate width: Wg = 400 µm • 4-pin super minimold package


    Original     		PDF NE34018 NE34018-T1 NE34018-T2 5570 C10535E NE34018 NE34018-T1 NE34018-T2 VP15-00-3 4069 NOT GATE IC nec 4308 IC GA-08

    NE76118

    Abstract: NE76118-T1 NE76118-T2
    Text: GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER • LOW COST MINIATURE PLASTIC PACKAGE SOT-343 25 4 20 Noise Figure, NF (dB) GA • HIGH ASSOCIATED GAIN: 13.5 dB typical at 2 GHz • LG = 1.0 µm, WG = 400 µm • TAPE & REEL PACKAGING DESCRIPTION The NE76118 is a low cost gallium arsenide metal semiconductor field effect transistor housed in a miniature (SOT-343)


    Original     		PDF OT-343) NE76118 24-Hour NE76118-T1 NE76118-T2

    WG s 35

    Abstract: Scans-048 DSAGER00041
    Text: A WG 33 WG 34 50 0,18 50 0,18 N ETt 200^ 2001) 200 — — — 75 0 -1,5 -18 A Type Uf If Heizart Verw. EP 200’) 200 — 30 200 -1,5 -8 Ua Ug 5 U gi U g3 U g2 U gl la - - 15 2 0,35 0,08 1,2 3,5 24 0,2 2 250 1,5 1 65 1 4,5 3,56) 106) 2000 45 S D — - —


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FHR20X - GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=18GHz High Associated Gain: 10.0dB (Typ.)@f=18GHz Lg s 0.15|iim, Wg = 100|iim Gold Gate Metallization for High Reliability


    OCR Scan     		PDF FHR20X 18GHz FHR20X 2-30GHz FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: FHX45X - GaAs FET & HEMT Chips FEATURES • Low Noise Figure: 0.55dB Typ. @f=12GHz • High Associated Gain: 12.0dB (Typ.)@f=12GHz • Lg s 0.15|iim, Wg = 280|iim • Gold Gate Metallization for High Reliability


    OCR Scan     		PDF FHX45X 12GHz FHX45X 2-18GHz FCSI0598M200

    60HFU

    Abstract: Reduced conduction losses rectifier
    Text: Bulletin 12061 INTERNATIONAL RECTIFIER I« R 60HFU. S E R IE S S U P E R FAST REC T IFIER DIO D E 60 Am p 60ns Major ratings and characteristics 60HFU V WG c VUS Description and Features Units 60 A 82 °C 94 A lFSM 10m s 8 JO A lFSM @ 8 .3 m s 870 A


    OCR Scan     		PDF 60HFU. 60HFU Reduced conduction losses rectifier

    Untitled

    Abstract: No abstract text available
    Text: FHX13X, FHX14X _ GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @ f=12G Hz (FHX13) High Associated Gain: 13.0dB (Typ.)@ f=12G Hz Lg s 0.15|iim, Wg = 200|iim Gold G ate M etallization for High Reliability


    OCR Scan     		PDF FHX13X, FHX14X FHX13) FHX14X 2-18G FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: S A M S U N G E L E C T R O N I C S INC b7E » • 7 ^4 1 4 5 KM536512W/WG 0 D1 5 2 1 5 54T ■ SMGK DRAM MODULES 512KX36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tR A C KMM536512W-6 60ns 15ns 110ns KMM536512W-7 70ns 20ns


    OCR Scan     		PDF KM536512W/WG 512KX36 KMM536512W-6 110ns 130ns KMM536512W-8 150ns KMM536512W KMM536512WG:

    AD609

    Abstract: No abstract text available
    Text: MIS DFtAtfl WG 13 UNPUBLISHED. REVISIONS RESERVED. AMP PR0DU&T5 I REV LOG I D 1ST Ä 0-417T_ ECN AD-4707_ REV PER AD-5064_ A /Y Y Y Y 1 STANDOFFS? 3 TR H U 9 PO SN C2 R E Q D ON O U T S ID E E N D S O F


    OCR Scan     		PDF 0-417T_ AD-4707_ AD-5064_ AD-5526_ AD-6090 oig37p1J AD609

    Untitled

    Abstract: No abstract text available
    Text: b7E i> S A MS UN G E L E C T R O N I C S INC 7^4142 KMM536256W/WG 0015 20 b Ô2Ô • DRAM MODULES 256Kx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM536256W is a 256K bitsx36 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM536256W/WG 256Kx36 KMM536256W bitsx36 256Kx18 40-pin 72-pin KMM536256W-6 110ns

    AM/SSC 9500 ic data

    Abstract: No abstract text available
    Text: DATA SHEET_ GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEA TU R E S • High Power Gain: Gs = 5.0 dB TYP. @ f = 12 GHz • Gate Length : Lg • Gate Width : Wg • 4-pin super minimold •


    OCR Scan     		PDF NE72218 NE72218-T1 NE72218-T2 VP15-00-3 WS60-00-1 P12750EJ2V0D AM/SSC 9500 ic data

    Untitled

    Abstract: No abstract text available
    Text: S A MS UN G E L E C T R O N I C S INC b?E D • 7 ^ 4 1 4 2 0D1521S 021 ■ SFIGK KM M532512W/WG DRAM MODULES 512Kx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM532512W is a 512K bit x 32 Dynam­ ic RAM high density memory module. The Samsung


    OCR Scan     		PDF 0D1521S M532512W/WG 512Kx32 KMM532512W 256KX16 40-pin 72-pin 22/iF 110ns

    NE674

    Abstract: NE67483 NE67483B
    Text: PRELIMINARY DATA SHEET_ M E C / G a A s / M E S f e t NE674 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure N F = 1.4 dBTYP. a tf= 1 2 G H z • High associated gain G a = 1 0 dBTYP, a t f = 1 2 GHz • Gate width: Wg = 280 ¿¿m


    OCR Scan     		PDF NE674 NE67400 NE67483B NE67483B] NE67400] NE674 NE67483

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical at f = 12 G Hz • LG = 0.25 Jim, Wg = 200 Jim


    OCR Scan     		PDF NE32400 NE32400 24-Hour

    D01471

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b 4 E ]> • TTbMlME DDIMTOT 154 KM M536256W/WG SflfiK DRAM MODULES 256Kx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KMM536256W is a 256K b it x 36 Dynam­ ic RAM high d e n sity m em ory m odule. The Sam sung


    OCR Scan     		PDF M536256W/WG 256Kx36 KMM536256W M536256W 40-pin 72-pin 22fiF KMM536256W-7 130ns KMM536256W-8 D01471

    ICL232

    Abstract: No abstract text available
    Text: WG « 1993 m ÊLmmm i 0 ^ Mm HARRIS S E M I C O N D U C T O R Ê +5V Powered Dual RS-232 Transmitter/Receiver August 1993 Description Features • The ICL232 is a dual RS-232 transmitter/receiver interface circuit that meets all EIA RS-232C specifications. It requires


    OCR Scan     		PDF RS-232 ICL232 RS-232 RS-232C 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 0014=12^ 604 « S M Ù K PRELIMINARY KM M5322000W/WG DRAM MODULES 2M X 32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KMM5322000W is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF M5322000W/WG KMM5322000W 42-pin 72-pin 22/iF KMM5322000W-7 M5322000W-10 KMM5322000W-8 150ns

    sl2 357

    Abstract: No abstract text available
    Text: D A TA S H EE T GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.5 dB TYP. @ f = 12 GHz • Gate Length: Lg = 0.8 /urn recessed gate • Gate W idth: Wg = 330 /urn • 4 pins super mini mold


    OCR Scan     		PDF NE72118 NE72118-T1 NE72118-T2 WS60-00-1 IR30-00-2 sl2 357

    AD-5526

    Abstract: No abstract text available
    Text: OftAUlNB HADE IN THjftD ANftLE PfiOJECTION MIS DFtAtfl WG IS UNPOBL JShED. | RELEASED FCft PUB11EAT[QM B [rev PER *R-77CC ' REV LOC t D 1ST À0-417T_ ECN AD-4707_ REV PER ECN AD-5526_ A /Y Y W 1 STAN D O FFS? 3 THRU 9 PO SN C2 R E Q D O N O U T S I D E E N D S O F


    OCR Scan     		PDF PUB11EAT R-77CC 0-417T_ AD-4707_ AD-5526_ 00t0-0329-92_ AD-5526

    1-282836-0

    Abstract: 440c1
    Text: BUCHANAN Catalog 1308389 Terminal Blocks R e v ise d 12-02 B O A R D M O U N T , S ID E W IR E E N T R Y Board Mount w/lnterlock, Low Profile, 5.0 mm Centerline, Side Wire Entry UL R a tin g -3 0 0 V, 13.5 A 16 30 A WG 10 A for field wiring applications I


    OCR Scan     		PDF 2-2B2837-6_ 1-282836-0 440c1

    Untitled

    Abstract: No abstract text available
    Text: VOLTAGE RATING: 3 0 0 VAC TEMPERATURE RATING: -55 TO W IRE RANGE: „040"X.090" OUTSIDE . 33 CURRENT RATING, AMPS CD O O CO CO W IRE GAUGE A WG I mm 2 I [8.4] 105 ° C DIAMETER 12.5 TYP . PROPER CABLE T E R M I N A T I O N DEP T M NOT ES s * 1. 2 . 3 . SEE


    OCR Scan     		PDF

    AI203

    Abstract: TCC-75-2 BNC-50 BNC50
    Text: □ WG S I ZE DASH A ND /9\ CABLES ACCOMMODATED -003 -004 R G - 174,316 R G - 1 7 9 , 187 NORTHERN ELECTRIC DBL-SHLD R G - 187 G C B 7 5 G P I ,GRUMMAN DBL-SHLD RG-18B 2 7 5 - 3991,MICRDDDT R G - 195,-180 4 2 1 - 1 1 1 , ESSEX 82 1 8 , BELDEN 2 1 - 5 97,ESSEX


    OCR Scan     		PDF -013A -013B -015A RG-18B YR23023 RG-58 RG-303 RG-59 TCC-75-2 RG-62 AI203 BNC-50 BNC50

    NRZ to MFM encoder

    Abstract: LS74 mfm encoder AIC-010 AIC-250F AIC-250FL mfm to nrz reliability test raw data mfm decoder plastic raw material
    Text: AIC-250F a d a p te c , inc. Encoder/Decoder NRZ W A M /A M D V2.0 V1.5 V1.0 MFMI M FM C - MFMOEWC GND OSC OUT OSC IN - 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 AIC-250F ENCODE/ DECODE CHIP O NC - WG 27 - 1 -v c c O Z­ I o CM 28 - C S


    OCR Scan     		PDF AIC-250F 24-Pin 28-Pin AIC-250F AIC-010 AIC-300, 28-Lead NRZ to MFM encoder LS74 mfm encoder AIC-250FL mfm to nrz reliability test raw data mfm decoder plastic raw material