irf9540
Abstract: l 9143 irfp9140 IRFP9143 IRF9540 mosfet IRF9541 9142 ha 9141 9143 15a 50v p-channel mosfet
Text: SAMSUNG ELSTC^ONTCS IN C h4 E D WÊ 7 T b m M 2 IK I-y ö 4 Ü /»ö4 1 /y ö 4 2 /9 5 4 3 IRFP9140/914179142/9143 FEATURES • • • • • • • □□122bG GG E • SI1GK P-CHANNEL POWER MOSFETS TO-220 Lower Rds ON Improved inductive ruggedness Fast switching times
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41/y542/9543
IRFP9140/9141
-100V
IRF9541/Ã
RFP9141
IRF9542/IRFP9142
IRF9543/IRFP9143
O-220
irf9540
l 9143
irfp9140
IRFP9143
IRF9540 mosfet
IRF9541
9142
ha 9141
9143
15a 50v p-channel mosfet
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111ii
MZ5558
Z5555,
Z5556,
MZ5557
powec rm 1110
rm 1100 powec
MPC1000
transistors JX 6822 A
inverter welder 4 schematic
SAA 14Z
transistor SI 6822
stg 8810
PL 15Z DIODE
germanium transistor
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70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
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2SA1162
2SA1163
2SC1815
2SA1015
2SC2458
2SC2459
2SA1048
2SA1049
2SC2712
2SC2713
70H40
transistor equivalent d2012
2SC734 equivalent
3sk73 equivalent
2sb502
2sa776 bl
2sc2075 equivalent
2sk For Low Noise Audio Amplifier Applications
2sa970 BL equivalent
2sa776 gr
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2N3904U
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA 2N3904U EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEjj=50nA Max. , IBL=50nA(Max.) @Vce=30V, Veb=3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage
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2N3906TJ.
2N3904U
42db0
Ta-25
2N3904U
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Untitled
Abstract: No abstract text available
Text: sb TOSHIBA -CDISCRETE/OPTO> 9097250 TOSHIBA ï>F| ^ a ^ s a 0D 077t,a t T-33-35 56C 07768 <DISCRETE/OPTO SILICON NPN TRIPLE DIFFUSED M ESA TYPE _ DARLINGTON POWER)_ 2SD698 INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATION.
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T-33-35
2SD698
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KTA1666
Abstract: KTC4379 OB2 SOT-89
Text: SEMICONDUCTOR TECHNICAL DATA KTC4379 EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • Low Saturation Voltage. : VcE sat =0.5V(Max.) (IC=1A) • High Speed Switching Time: tstg=1.0j/S(Typ.) • PC=1~2W (Mounted on Ceramic Substrate)
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KTC4379
KTA1666.
KTC4379
250mm
250mm2
KTA1666
OB2 SOT-89
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Untitled
Abstract: No abstract text available
Text: fT P e FORWARD INTERNATIONAL ELECTRONICS LTD. BC807S SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR *Conpfement to BC817S ABSOLUTE MAXIMUM RATINGS at Tjwdrt5*C Characteristic Symbol Rating Unit Collector-Base Voltage
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BC807S
BC817S
-10uA
-100mA
-500mA
-500mA
-50mA
100MHZ
062in
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KTA1666
Abstract: KTC4379 high speed amplfier
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC4379 EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • Low Saturation Voltage. : VcE sat =0.5V (Max.) (Ic=lA) • High Speed Switching Time: tstg=1.0//S(Typ.)
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KTC4379
KTA1666.
KTC4379
250mm2
KTA1666
high speed amplfier
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sot-89, amplifier, H1
Abstract: H1 SOT-89 amplifier A1666 KTA1666 KTC4379
Text: K E C SEMICONDUCTOR KTA1666 TECHNICAL DATA e p it a x ia l p l a n a r p n p ti POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES • Low Saturation Voltage : VcE sat =- 0.5V(Max.) (Ic=-1A) • High Speed Switching Time : tstg=1.0//S(Typ.)
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A1666
KTC4379.
KTA1666
250mm2x
sot-89, amplifier, H1
H1 SOT-89 amplifier
A1666
KTC4379
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MPSA44
Abstract: MPSA94
Text: SEMICONDUCTOR TECHNICAL DATA MPSA94 EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES • High Breakdown Voltage. • Complementary to MPSA44. ABSOLUTE MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage
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MPSA94
MPSA44.
MPSA44
MPSA94
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2N3905
Abstract: 2N3906 transistor 2N3905
Text: SAMSU NG SEMICON DU CTO R .INC 2N3905 14E 0 7 ^ 4 1 4 2 OOQTlba b | PNP EPITAXIAL SILICOJN TRANSISTOR T-29-21 GENERAL PURPOSE TRANSISTOR • C o lle cto r-E m ltte r Voltage: Vcco=40V • C o lle cto r D issipation : P c (max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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71tmM2
00071faa
2N3905
625mW
2N3906
T-29-21
10/iA,
100mA
100MHz
f-100KHz
transistor 2N3905
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2n5551 samsung
Abstract: transistor 2n5550 2N5550 2N5551
Text: SAMSUNG S E MI CON DU C T DR INC 2N5550 14E D | 7^4142 0007],fi? NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V ceo=140V • Collector Dissipation: P c m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic
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0007ia?
2N5550
625mW
2N5551
T-29-21
100/iA,
100MHz
2n5551 samsung
transistor 2n5550
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2SD698
Abstract: OPTO 701 1C00 251C DD077
Text: TOSHIBA "st ÍDISCRETE/OPTO> DË'l'iciTPasa o o D 7 7 ba b "I“ / j / 9097250 TOSHIBA <D I S C R E T E / O P T O S IL IC O N NPN T R IP L E D IF F U SE D M E S A T YPE D A R L IN G T O N POWER)_ INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATION.
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mpsa44v
Abstract: MPSA44 bi 370 transistor MPSA45 bi 370 transistor e
Text: SEMICONDUCTOR TECHNICAL DATA MPSA44/45 EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES • High Breakdown Voltage. • Collector Power Dissipation : Pc=625mW. ABSOLUTE MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL Collector-Base Voltage
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MPSA44/45
625mW.
MPSA44
MPSA45
10MHz
mpsa44v
bi 370 transistor
MPSA45
bi 370 transistor e
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