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    RQG2003

    Abstract: SiGe POWER TRANSISTOR WQFN0202 RF Radio frequency IC, 8pin 2.4 ghZ rf transistor RF output cordless phone transistor 2.4 ghz RF TRANSISTOR 2.4 GHZ SiGe RF TRANSISTOR
    Text: Renesas Technology Releases SiGe Power Transistor Achieving Industry’s Highest Performance Level for Power Amplifier Use in Wireless LAN Terminals, etc.  Offering 2.4 GHz/5 GHz dual-band compatibility and allowing implementation of low-power-consumption products 


    Original     		PDF RQG2003 HSG2002, tranRQG2003 WQFN0202 SiGe POWER TRANSISTOR WQFN0202 RF Radio frequency IC, 8pin 2.4 ghZ rf transistor RF output cordless phone transistor 2.4 ghz RF TRANSISTOR 2.4 GHZ SiGe RF TRANSISTOR

    WQFN0202-8V

    Abstract: No abstract text available
    Text: HSG2002 SiGe HBT High Frequency Medium Power Amplifier REJ03G0444-0100 Rev.1.00 Oct.28.2004 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +25 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage


    Original     		PDF HSG2002 REJ03G0444-0100 WQFN0202-8V vo-900 Unit2607 WQFN0202-8V