CPI Helix tube
Abstract: WRD-650 90 KW blower VTX6389L3 MIMIC control panel MKT-202
Text: CPI 1.0kW X-Band TWT Amplifier for Instrumentation Applications X- Band The VZX-2783C1 x-Band 1.0 kW TWT High Power Amplifier features high efficiency and power for EMC/EMI testing. Safety Provides 1000 watts of power in the 8.0 to 12.75 GHz frequency band in a compact 19inch rack-mount dual drawer configuration for
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VZX-2783C1
19inch
MKT-202,
CPI Helix tube
WRD-650
90 KW blower
VTX6389L3
MIMIC control panel
MKT-202
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Medium Power Amplifiers
Abstract: No abstract text available
Text: TABLE OF CONTENTS CONTENTS INTRODUCTION Corporate Overview AMF Technology Overview AMF AMPLIFIERS Low-Noise Amplifiers Octave Band Multioctave Band Moderate Band Ultra-Broadband Low-Noise SATCOM Amplifiers C-Band Waveguide Input X-Band Waveguide Input Ku-Band Waveguide Input
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miteq amf
Abstract: Medium Power Amplifiers x-band power amplifier power amplifiers
Text: TABLE OF CONTENTS CONTENTS INTRODUCTION Corporate Overview AMF Technology Overview AMF AMPLIFIERS Low-Noise Amplifiers Octave Band Multioctave Band Moderate Band Ultra-Broadband Low-Noise SATCOM Amplifiers C-Band Waveguide Input X-Band Waveguide Input Ku-Band Waveguide Input
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C10535E
Abstract: NE72218 NE72218-T1 NE72218-T2 VP15-00-3 ne72218 v58
Text: DATA SHEET GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz • Gate length : Lg = 0.8 µm • Gate width : Wg = 400 µm • 4-pin super minimold package
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NE72218
NE72218-T1
NE72218-T2
C10535E
NE72218
NE72218-T1
NE72218-T2
VP15-00-3
ne72218 v58
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Untitled
Abstract: No abstract text available
Text: X-Band Hub-mount SSPB 300W to 500W SSPB-3000XTM series Features • Converts synthesized L-Band to X-Band Integrated amplifier with an output power of 250W to 500W Phase-locked oscillator to external 10MHz reference
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SSPB-3000XTM
10MHz
MIL-STD-188-164A
SSPB-3000X
PB-SSPB-X-300-500-13150
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AM7808CLT
Abstract: No abstract text available
Text: AM7808 AM7808HighEfficiency Quad-Band Tx Dual-Band Rx GSM/GPRS CMOS Tx Module High-Efficiency Quad-Band Tx Dual-Band Rx GSM/GPRS CMOS Tx Module Package: LGA, 5.25mm x 5.30mm x 0.80mm RX1 TM AdaptiveRF HB_IN Features ANT Extended Power Added Efficiency
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AM7808
AM7808HighEfficiency
EGSM850
EGSM900
DCS1800
PCS1900
DS121106
AM7808-CLZ
AM7808-CLS
AM7808CLT
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WR284* ISOLATOR
Abstract: MS3116E-10-6S WR340 flange dimensions
Text: Back to Amplifier Home Page AMF SATCOM AMPLIFIERS Introduction S-Band C-Band X-Band Ku-Band Ka-Band 40 – 60 GHz Low Noise Outline Drawings 100 Davids Drive • Hauppauge, NY 11788 • 631-436-7400 • Fax: 631-436-7430 • www.miteq.com TABLE OF CONTENTS
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2002/96/EC
2002/96/EC
C-39B
WR284* ISOLATOR
MS3116E-10-6S
WR340 flange dimensions
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Untitled
Abstract: No abstract text available
Text: 16W / 20W / 25W X-Band Block Up Converter GaN Technology 16W / 20W / 25W GaN-based X-Band BUC SSPBg-210XTM series Designed to meet MIL-STD-188-164A Features • Up-converts an L-Band input frequency 950 – 1450 MHz to the X-Band frequency of 7.9 – 8.4 GHz
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SSPBg-210XTM
MIL-STD-188-164A
SSPBg-210X
CPR112
PB-SSPBmg-16W-20W-25W-X-25-13178
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amplifier 400W
Abstract: 400w amplifier miteq twt
Text: MT3400H ANTENNA MOUNT TRAVELING WAVE TUBE MEDIUM POWER AMPLIFIER C-BAND: X-BAND: Ku-BAND: DBS-BAND: 400W 400W 400W 270W MT3400H FEATURES: Operational Temperature of 60°C Weather Resistant Antenna Mount TWT Amplifier Typical Phase Noise 10 dB Below IESS-308
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MT3400H
MT3400H
IESS-308
MIL-STD-810E,
amplifier 400W
400w amplifier
miteq twt
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solid state amplifier
Abstract: operation of class c amplifier
Text: Solid State Power Amplifier High Power, Broadband, X Band Solid State RF Amplifier Aethercomm P/N SSPA 8.6-9.5-10 is a high power X • Operation from 8.6 to 9.5 GHz Minimum band solid state power amplifier that operates from • 15 Watts Typical Output Power Across Band @ 25 C
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Untitled
Abstract: No abstract text available
Text: X-Band Hub-mount SSPB 16W to 250W SSPB-2000XTM series Features • Converts L-Band signal to X-Band frequency Integrated amplifier with an output power from 16W to 250W Phase-locked oscillator to external 10MHz reference
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SSPB-2000XTM
10MHz
MIL-STD-188-164A
SSPB-2000X
PB-SSPB-X-16-250-13150
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CHA5012
Abstract: No abstract text available
Text: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through
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CHA5012
CHA5012
DSCHA50126286
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X-band Gan Hemt
Abstract: FMA3015 MIL-HDBK-263 9-GHz
Text: FMA3015 FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC Die: 4.52mmx3.05mm Product Description Features The FMA3015 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare
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FMA3015
52mmx3
FMA3015
FMA3015-000
FMA3015-000SQ
FMA3015-000S3
DS081118
FMA3015-000SB
X-band Gan Hemt
MIL-HDBK-263
9-GHz
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99-F
Abstract: CHA5012-99F CHA5012
Text: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through
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CHA5012
CHA5012
DSCHA50126286
99-F
CHA5012-99F
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Untitled
Abstract: No abstract text available
Text: Optiva OTS-2: X-Band RF Fiber Optic Transport System DATASHEET | JUNE 2013 SATCOM X-Band RF Fiber Optic Transport System The Optiva OTS-2 X-Band transmitter and receiver are ideal to construct 7.000 to 10.000 GHz transparent fiber optic links for antenna remoting, electronic warfare systems, broadband delay
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Untitled
Abstract: No abstract text available
Text: TGA4517 Ka Band Power Amplifier Key Features • • • • • • • Frequency Range: 31 - 37 GHz 35 dBm Nominal Psat @ Mid-band 20 dB Nominal Gain @ Mid-band 12 dB Nominal Return Loss Bias 5-6 V, 2 A Quiescent 0.15 um 3MI pHEMT Technology Chip Dimensions 4.35 x 3.90 x 0.05 mm
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TGA4517
TGA4517
35dBm
37GHz.
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ka band power amplifier
Abstract: TGA4517 ka band power mmic
Text: TGA4517 Ka Band Power Amplifier Key Features • • • • • • • Frequency Range: 31 - 37 GHz 35 dBm Nominal Psat @ Mid-band 20 dB Nominal Gain @ Mid-band 12 dB Nominal Return Loss Bias 5-6 V, 2 A Quiescent 0.15 um 3MI pHEMT Technology Chip Dimensions 4.35 x 3.90 x 0.05 mm
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TGA4517
TGA4517
35dBm
37GHz.
ka band power amplifier
ka band power mmic
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cha7215
Abstract: x-Band High Power Amplifier
Text: CHA7215 RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC Description VG1R VD1 VG2R ● ● The CHA7215 is a monolithic three-stage GaAs high power amplifier designed for X band applications. The HPA provides typically 9W output power
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CHA7215
CHA7215
19dBm
DSCHA72159287
x-Band High Power Amplifier
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X-band Gan Hemt
Abstract: 84-1 CONDUCTIVE EPOXY MIL-HDBK-263 84-1 LMIT x-Band Hemt Amplifier
Text: FMA3015 FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3015 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare
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FMA3015
FMA3015
FMA3015-000
FMA3015-000SQ
DS090306
FMA3015-000S3
X-band Gan Hemt
84-1 CONDUCTIVE EPOXY
MIL-HDBK-263
84-1 LMIT
x-Band Hemt Amplifier
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CHA7010
Abstract: x-Band High Power Amplifier
Text: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP
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CHA7010
CHA7010
DSCHA70104054
x-Band High Power Amplifier
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x-Band High Power Amplifier
Abstract: 10Ghz RF Power 10w amplifier CHA7010
Text: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP
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CHA7010
CHA7010
DSCHA70104054
x-Band High Power Amplifier
10Ghz RF Power 10w amplifier
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Gunn Diode
Abstract: Microwave Silicon Detector Diode DW9248 microwave waveguide Marconi gunn Silicon Detector UHF diode varactor diode filter varactor
Text: Product List TYPE No. DESCRIPTION DA1304 DA1307 MILLIMETRE WAVE BALANCED MIXER 34.0 to 34.4GHz BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER
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DA1304
DA1307
DA1321
DA1321-1
DA1338
DA1338-1
DA1338-2
DA1338-3
DA1349-2
DA1349-4
Gunn Diode
Microwave Silicon Detector Diode
DW9248
microwave waveguide
Marconi gunn
Silicon Detector
UHF diode
varactor diode filter
varactor
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Untitled
Abstract: No abstract text available
Text: WffllGECPLESSEY DS3792-1.2 DA1664 X BAND SINGLE SIDE BAND RECEIVER The DA1664 is an X Band microwave single sideband mixer with integral IF amplifier. It provides single sideband reception accepting signals below the LO frequency over the frequency range 9.4 - 9.9GHz with an IF of 15MHz. The unit is
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DS3792-1
DA1664
DA1664
15MHz.
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Untitled
Abstract: No abstract text available
Text: united monolithic semiconductors CHA7114 RoHS COMPLIANT X Band High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7114 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a UMS
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CHA7114
CHA7114
DSCHA7114-0197
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