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    X1201 Price and Stock

    Bourns Inc TC33X-1-201E

    TRIMMER 200 OHM 0.15W J LEAD TOP
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    DigiKey TC33X-1-201E Digi-Reel 4,378 1
    • 1 $0.33
    • 10 $0.267
    • 100 $0.2147
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    TC33X-1-201E Cut Tape 4,378 1
    • 1 $0.33
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    TC33X-1-201E Reel 2,500 2,500
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    Avnet Americas TC33X-1-201E Reel 16 Weeks 5,000
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    Onlinecomponents.com TC33X-1-201E
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    Avnet Abacus TC33X-1-201E Reel 17 Weeks 5,000
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    Master Electronics TC33X-1-201E
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    Qualtek Electronics Corporation Q5-2X-1-2-01-QB48IN-5

    HEATSHRINK 1/2" X 4' BLACK 1=1PC
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    DigiKey Q5-2X-1-2-01-QB48IN-5 Bulk 1,705 1
    • 1 $3.73
    • 10 $2.827
    • 100 $2.1408
    • 1000 $2.1408
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    Bourns Inc 3269X-1-201GLF

    TRIMMER 200 OHM 0.25W GW SIDE
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    DigiKey 3269X-1-201GLF Digi-Reel 893 1
    • 1 $5.04
    • 10 $4.049
    • 100 $3.2405
    • 1000 $2.96232
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    3269X-1-201GLF Cut Tape 893 1
    • 1 $5.04
    • 10 $4.049
    • 100 $3.2405
    • 1000 $2.96232
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    3269X-1-201GLF Reel 500 500
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    Avnet Americas 3269X-1-201GLF Reel 7 Weeks 500
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    • 10000 $2.093
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    Mouser Electronics 3269X-1-201GLF 495
    • 1 $4.88
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    • 100 $3.24
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    Onlinecomponents.com 3269X-1-201GLF
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    Avnet Abacus 3269X-1-201GLF Reel 8 Weeks 500
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    Master Electronics 3269X-1-201GLF
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    Eaton Bussmann E3X120101X02

    CRYSTAL 3225 12MHZ 10PF 10PPM
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    DigiKey E3X120101X02 Digi-Reel 200 1
    • 1 $0.25
    • 10 $0.214
    • 100 $0.1858
    • 1000 $0.16147
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    E3X120101X02 Cut Tape 200 1
    • 1 $0.25
    • 10 $0.214
    • 100 $0.1858
    • 1000 $0.16147
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    Eaton Bussmann E5X120184Y03

    CRYSTAL 5032 12MHZ 18PF 30PPM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey E5X120184Y03 Digi-Reel 200 1
    • 1 $0.93
    • 10 $0.81
    • 100 $0.7043
    • 1000 $0.6385
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    E5X120184Y03 Cut Tape 200 1
    • 1 $0.93
    • 10 $0.81
    • 100 $0.7043
    • 1000 $0.6385
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    Find more X1201 price and stock on Findchips.com

    X1201 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRFP360LC

    Abstract: No abstract text available
    Text: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.20 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		IRFP360LC, SiHFP360LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFP360LC PDF

    TO-247 Package

    Abstract: No abstract text available
    Text: IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V 0.21 Qg (Max.) (nC) 180 Qgs (nC) 61 Qgd (nC) Requirements


    Original     		IRFP26N60L, SiHFP26N60L 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TO-247 Package PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.20 • Isolated Central Mounting Hole Qg (Max.) (nC) 210 Qgs (nC) 30 • Fast Switching 110


    Original     		IRFP360, SiHFP360 2002/95/EC O-247AC O-247AC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    irfpf40

    Abstract: No abstract text available
    Text: IRFPF40, SiHFPF40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 900 RDS(on) (Ω) VGS = 10 V 2.5 Qg (Max.) (nC) 120 Qgs (nC) 16 Qgd (nC) 67 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole


    Original     		IRFPF40, SiHFPF40 2002/95/EC O-247AC O-247AC O-220trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. irfpf40 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching


    Original     		IRFPE40, SiHFPE40 2002/95/EC O-247AC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)


    Original     		IRFPC50A, SiHFPC50A 2002/95/EC O-247AC O-247AC IRFPC50APbF 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • 175 °C Operating Temperature 110 Qgs (nC) 29 Qgd (nC) 38 Configuration Available • Isolated Central Mounting Hole


    Original     		IRFP048, SiHFP048 2002/95/EC O-247AC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    C180-24

    Abstract: No abstract text available
    Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.064 Qg max. (nC) 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		SiHG47N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 C180-24 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V 0.18 Qg (Max.) (nC) 180 Qgs (nC) 56 Qgd (nC) 86 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFP27N60K, SiHFP27N60K 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration • Isolated Central Mounting Hole COMPLIANT • Ease of Paralleling


    Original     		IRFPE30, SiHFPE30 2002/95/EC O-247AC O-247AC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFPF50, SiHFPF50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 900 RDS(on) (Ω) VGS = 10 V 1.6 Qg (Max.) (nC) 200 Qgs (nC) 24 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		IRFPF50, SiHFPF50 2002/95/EC O-247AC O-247AC O-22trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.60 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		IRFPC50LC, SiHFPC50LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRFPC60PB

    Abstract: No abstract text available
    Text: IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 210 Qgs (nC) 26 Qgd (nC) 110 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		IRFPC60, SiHFPC60 2002/95/EC O-247AC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFPC60PB PDF

    IRFP140P

    Abstract: No abstract text available
    Text: IRFP140, SiHFP140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.077 Qg (Max.) (nC) 72 Qgs (nC) 11 Qgd (nC) 32 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		IRFP140, SiHFP140 O-247AC 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFP140P PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 74 Qgs (nC) 19 Qgd (nC) 35 Configuration Single D Ultra Low Gate Charge Reduced Gate Drive Requirement


    Original     		IRFP450LC, SiHFP450LC O-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS


    Original     		SiHG30N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHG22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.190 98 Qgs (nC) 17 Qgd (nC) 25 Configuration Single D TO-247AC


    Original     		SiHG22N60S O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    4810 mosfet

    Abstract: No abstract text available
    Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced Switching and Conduction Losses


    Original     		SiHG47N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 4810 mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 120 Qgs (nC) 32 Qgd (nC) 49 Configuration Single D Ultra Low Gate Charge Reduced Gate Drive Requirement


    Original     		IRFP460LC, SiHFP460LC O-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    notebook led display pinout

    Abstract: tdk inverter keypad 3x4 decoder D405 voltage regulator AC037 D312 6 pin usb JP901 varitronix qvga ccfl backlight inverter 3x4 matrix keypad driver
    Text: PHYTEC phyCORE-PXA270 Acceleration Carrier Board Hardware Manual Doc. No. L-701e_0 Prod. No. PCM-969 PCB No. 1289.0 September 18, 2007 A product of a PHYTEC Technology Holding company phyCORE-PXA270 Acceleration Carrier Board In this manual are descriptions for copyrighted products that are not explicitly


    Original     		phyCORE-PXA270 L-701e PCM-969 phyCORE-PXA270 notebook led display pinout tdk inverter keypad 3x4 decoder D405 voltage regulator AC037 D312 6 pin usb JP901 varitronix qvga ccfl backlight inverter 3x4 matrix keypad driver PDF

    Siemens tc35i GSM

    Abstract: siemens modem gsm tc35 tc35i coin based solar mobile charger circuit diagram Siemens TC35 TC35i GSM Module coin based solar mobile charger Siemens TC35i GSM modem 8 port tc35i CIRCUIT DIAGRAM siemens modem gsm tc35i SOLAR MOBILE CHARGER circuit diagram
    Text: Version: 03.01a DocID: TC35i_HD_V03.01a Hardware Interface Description TC35i Siemens Cellular Engine s TC35i Hardware Interface Description Confidential / Released Document Name: TC35i Hardware Interface Description Version: 03.01a Date: December 23, 2005


    Original     		TC35i TC35i MM9329-2700 M22001 M22001 HH-SI-30 L36880-N3015-A117 DSB35 L36880-N8101-A100-3 Siemens tc35i GSM siemens modem gsm tc35 coin based solar mobile charger circuit diagram Siemens TC35 TC35i GSM Module coin based solar mobile charger Siemens TC35i GSM modem 8 port tc35i CIRCUIT DIAGRAM siemens modem gsm tc35i SOLAR MOBILE CHARGER circuit diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS


    Original     		SiHG30N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHG24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145


    Original     		SiHG24N65E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    TS1003

    Abstract: TS0801 TS1001 TS1002 NDN111AWH 220HB TB200HB ts08 ts1201 TB400
    Text: Wire Connection Products Section Contents Page Rail mount terminal blocks NDN Series 35mm DIN rail mount blocks . . . . . . . . 286-287 N512-BK 12-Pole block . . . . . . . . . . . . . . . . . . . . . . . . . . 288 NFT2-WH 2-Pole block . . . . . . . . . . . . . . . . . . . . . . . . . . 288


    Original     		N512-BK 12-Pole TS1003 TS0801 TS1001 TS1002 NDN111AWH 220HB TB200HB ts08 ts1201 TB400 PDF